KEC KTC2025D

SEMICONDUCTOR
KTC2025D/L
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
A
I
C
J
D
FEATURES
High breakdown voltage VCEO 120V, high current 1A.
O
K
E
Q
Complementary to KTA1045D/L
M
B
Low saturation voltage and good linearity of hFE.
H
P
F
1
MAXIMUM RATING (Ta=25
2
)
1. BASE
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
IC
1
ICP
2
2. COLLECTOR
3. EMITTER
DPAK
I
A
C
A
J
B
Collector Current
3
Tc=25
Junction Temperature
Storage Temperature Range
PC
W
8
K
Dissipation
1.0
P
H
G
Tj
150
Tstg
-55 150
E
Ta=25
Q
Collector Power
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_
5.0 + 0.2
_ 0.2
1.10 +
_ 0.2
2.70 +
_ 0.1
2.30 +
1.00 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.20
2.00 +
_ 0.10
0.50 +
_ 0.10
0.91+
_ 0.1
0.90 +
_ 0.10
1.00 +
0.95 MAX
D
CHARACTERISTIC
L
F
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
F
1
F
2
L
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_ 0.2
1.10 +
_ 0.6
9.50 +
_ 0.1
2.30 +
_ 0.1
0.76 +
1.0 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.2
2.0 +
_ 0.1
0.50 +
_ 0.1
1.0 +
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
IPAK
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut of Current
ICBO
VCB=50V, IE=0
-
-
1
A
Emitter Cut of Current
IEBO
VEB=4V, IC=0
-
-
1
Collector-Base Breakdown Voltage
V(BR)CBO
120
-
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10 A, IE=0
IC=1mA, IB=0
A
V
120
-
Emitter-Base Breakdown Voltage
V(BR)EBO
DC Current Gain
Gain Bandwidth Product
-
V
5
-
-
V
hFE(1) Note
IE=10 A, IC=0
VCE=5V, IC=50mA
100
-
320
hFE(2)
VCE=5V, IC=500mA
20
-
-
fT
VCE=10V, IC=50mA
-
130
-
MHz
VCB=10V, IE=0, f=1MHz
-
20
-
pF
-
0.15
0.4
V
-
0.85
1.2
V
-
100
-
-
500
-
-
700
-
Cob
Output Capacitance
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
Turn-on Time
Switching Time
Turn-off Time
ton
toff
1
20u sec
1Ω
I B1
I B2
24Ω
100Ω
1uF
Storage Time
(Note) : hFE(1) Classification
2003. 3. 27
tstg
nS
1uF
-2V
VCE =12V
I C =10I B1 =-10I B2 =500mA
12V
Y:100 200, GR:160 320
Revision No : 3
1/2
KTC2025D/L
VCE(sat) - I C
Tc=25 C
1.4
20
1.2
15
12
1.0
10
0.8
8
0.6
4
0.4
2
0.2
0
6
IB =0mA
1
0
2
3
4
5
6
1.0
I C /I B =10
0.5
0.3
0.1
0.05
0.03
0.01
1
3
COLLECTOR-EMITTER VOLTAGE V CE (V)
1k
3k
0.8
Pc - Ta
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
BASE-EMITTER VOLTAGE V BE (V)
1.2
200
f=1MHz
100
COLLECTOR DISSIPATION PC (W)
COLLECTOR CURRENT I C (A)
OUTPUT CAPACITANCE Cob (pF)
300
1.0
50
10
1 Tc=25 C
2 Ta=25 C
1
8
6
4
2
0
30
2
0
20
40
60
80
100
120
140
160
AMBIENT TMMPERATURE Ta ( C)
10
5
0.05
1
3
10
30
100
COLLECTOR-BASE VOLTAGE VCE (V)
SAFE OPERATING AREA
500
COLLECTOR CURRENT I C (A)
h FE - I C
DC CURRENT GAIN hFE
100
VCE =5V
1.2
C ob - VCB
VCE =5V
300
100
50
30
10
1
3
10
30
100
300
1k
COLLECTOR CURRENT I C (mA)
2003. 3. 27
30
COLLECTOR CURRENT I C (mA)
VBE - I C
1.4
10
Revision No : 3
5k
5
3
I C MAX.(PULSED) *
I C MAX. (CONTINUOUS)
10
0µ
S
1
DC
10 mS *
m *
OP
S*
Tc ER
=2 A
5
C TION
1
0.5
0.3
0.1
0.05
0.03
0.01
0.005
* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
1
10
VCEO MAX.
COLLECTOR CURRENT I C (A)
1.6
COLLECTOR EMITTER SATURATION
VOLTAGE VCE(sat) (V)
I C - VCE
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2