KEC KTC5103L

SEMICONDUCTOR
KTC5103D/L
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
A
FEATURES
I
C
J
D
High Power Dissipation : PC=1.3W(Ta=25 )
M
O
K
E
Q
B
Complementary to KTA1385D/L
H
MAXIMUM RATING (Ta=25
P
)
CHARACTERISTIC
F
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
DC
IC
5
Pulse *
ICP
8
IB
1
1
L
F
2
3
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_ 0.2
5.0 +
_ 0.2
1.10 +
_ 0.2
2.70 +
_ 0.1
2.30 +
1.00 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_ 0.20
2.00 +
_ 0.10
0.50 +
_ 0.10
0.91+
_ 0.1
0.90 +
_ 0.10
1.00 +
0.95 MAX
1. BASE
2. COLLECTOR
Tc=25
PC
Storage Temperature Range
* PW
10ms, Duty Cycle
W
15
Tj
150
Tstg
-55 150
Junction Temperature
J
D
Dissipation
1.0
B
Ta=25
I
A
C
K
Collector Power
A
P
H
E
Base Current
DPAK
A
Q
Collector Current
3. EMITTER
G
50%
F
1
F
2
L
3
DIM
A
B
C
D
E
F
G
H
I
J
K
L
P
Q
MILLIMETERS
_ 0.2
6.60 +
_ 0.2
6.10 +
_
5.0 + 0.2
_ 0.2
1.10 +
_ 0.6
9.50 +
_ 0.1
2.30 +
_ 0.1
0.76 +
1.0 MAX
_ 0.2
2.30 +
_ 0.1
0.5 +
_
2.0 + 0.2
_ 0.1
0.50 +
_ 0.1
1.0 +
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Emitter Cut-off Current
ICBO
VCB=50V, IE=0
IEBO
VEB=7V, IC=0
MIN.
TYP.
MAX.
UNIT
-
-
10
A
A
-
-
10
VCE=1V, IC=0.1A
60
-
-
hFE(2) (Note)
VCE=1V, IC=2A
160
-
400
hFE(3)
VCE=2V, IC=5A
50
-
-
Collector-Emitter Saturation Voltage *
VCE(sat)
IC=2A, IB=0.2A
-
0.1
0.3
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=0.2A
-
0.9
1.2
V
OUTPUT
-
0.2
1
5Ω
Collector Cut-off Current
TEST CONDITION
-
1.1
2.5
VCC =10V
-
0.2
1
hFE(1)
DC Current Gain
*
*
ton
Turn On Time
Switching
Time
INPUT
tstg
Storage Time
tf
50 S,
IB1=-I B2 =0.2A
DUTY CYCLE <
= 1%
I B2
S
Duty Cycle 2% Pulse
Note) hFE(2) Classification :
2003. 3. 27
I B1
IB1
IB2
Fall Time
* Pulse test : PW
20µsec
O:160 320,
Y:200 400.
Revision No : 3
1/3
KTC5103D/L
d T - TC
Pc - Ta
160
140
20
I C DERATING d T (%)
15
Tc
=2
10
5
C
5
50
100
150
1
COLLECTOR CURRENT I C (A)
10
mS
*
20
0m
Di S
*
ss
i
S/ pati
b L on
im Li
ite m
d ite
d
3
10
5
30
50
0
25
75
50
100
125
175 200
150
8
6
4
2
0
100
20
40
60
80
100
I C - VCE
h FE - I C
A
0m
10
I B=
I B =80mA
mA
IB
DC CURRENT GAIN h FE
mA
50
=1
I B=60mA
200
I B=40mA
mA
I B =30
I B =20mA
IB =
COLLECTOR CURRENT I C (A)
ite
d
COLLECTOR-EMITTER VOLTAGE V CE (V)
I B =10mA
2
I B =0mA
0.4
0.8
1.2
1.6
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27
im
COLLECTOR-EMITTER VOLTAGE VCE (V)
8
0
nL
10
10
4
tio
40
0
250
2m
S*
* SINGLE NONREPETITVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
6
pa
REVERSE BIAS
SAFE OPERATING AREA
1
0.1
60
S/b
Lim
ited
SAFE OPERATING AREA
I C MAX.
0.3
ssi
CASE TEMPERATURE Tc ( C)
3
0.5
Di
80
AMBIENT TEMPERATURE Ta ( C)
IC (Pulse) MAX. *
5
200
VCEO MAX.
COLLECTOR CURRENT I C (A)
10
100
20
Ta=25 C
0
0
120
VCEO (SUS)
POWER DISSIPATION P C (W)
25
Revision No : 3
2.0
1k
500
300
VCE =2V
VCE =1V
100
50
30
10
5
3
1
0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
2/3
KTC5103D/L
SATURATION VOLTAGE
VBE(sat), VCE(sat) (V)
V BE(sat), V CE(sat) - I C
10
5
3
I C /I B =10
VBE(sat)
1
0.5
0.3
0.1
0.05
0.03
0.01
VCE(sat)
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
2003. 3. 27
Revision No : 3
3/3