SEMICONDUCTOR KTX102U TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES B B1 Including two devices in US6. (Ultra Super mini type with 6 leads) 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process. A1 C Simplify circuit design. D B1 C D G 6 5 H EQUIVALENT CIRCUIT (TOP VIEW) MARKING 4 Type Name Q1 2 5 4 H T 0.15+0.1/-0.05 h FE Rank 1. 2. 3. 4. 5. 6. D 3 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + G 6 Q2 1 T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 1 2 Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR 3 US6 Q1 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 Base Current IB -30 SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 Base Current IB 30 SYMBOL RATING PC * 200 Tj 150 Tstg -55 150 Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Q1, Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range UNIT * Total Raing. 2002. 6. 24 Revision No : 2 1/5 KTX102U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 hFE (Note) VCE=-6V, IC=-2 120 - 400 - -0.1 -0.3 80 - - - 4.0 7.0 - 1.0 10 MIN. TYP. MAX. DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=-100 fT Transition Frequency , IB=-10 VCE=-10V, IC=-1 Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 Noise Figure NF VCE=-6V, IC=-0.1 Note) hFE Classification : Y(4)120~240, , Rg=10 SYMBOL ) TEST CONDITION Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 hFE (Note) VCE=6V, IC=2 120 - 400 DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.25 fT VCE=10V, IC=1 80 - - - 2.0 3.5 - 1.0 10 Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1 Noise Figure NF VCE=6V, IC=0.1 , f=1 Note) hFE Classification : Y(4)120~240, 2002. 6. 24 V GR(6)200~400 Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC , f=1 UNIT. , Rg=10 UNIT. V GR(6)200~400 Revision No : 2 2/5 KTX102U Q 1 (PNP TRANSISTOR) -200 3k COMMON EMITTER Ta=25 C I B =-2.0mA I B =-1.5mA -160 I B =-1.0mA -120 I B =-0.5mA -80 I B =-0.2mA -40 0 -1 -2 -3 -4 1k 500 Ta=25 C Ta=-25 C 100 VCE =-1V -5 -6 30 -0.1 -7 COLLECTOR-EMITTER VOLTAGE V CE (V) -0.3 -1 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -10 -0.3 -0.1 00 =1 Ta -0.05 -0.01 -0.1 C Ta=25 C Ta=-25 C -0.03 -0.3 -1 -3 -10 -30 -100 -3 -0.3 -0.3 -1 -3 10 30 100 -100 -300 Revision No : 2 300 COMMON EMITTER VCE =-6V -300 -100 -30 Ta=1 00 C BASE CURRENT IB (µA) TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 2002. 6. 24 -1k 50 30 3 -30 I B - V BE 100 1 -10 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =-10V Ta=25 C 0.3 -300 -0.5 -0.1 -0.1 -300 500 300 10 0.1 -100 -1 fT - IC 1k -30 COMMON EMITTER I C/I B=10 Ta=25 C -5 COLLECTOR CURRENT I C (mA) 3k -10 VBE(sat) - I C COMMON EMITTER I C /I B =10 -0.5 -3 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -1 VCE =-6V Ta=100 C 300 50 I B =0mA 0 COMMON EMITTER -10 Ta=2 5 C Ta=-2 5 C -240 h FE - I C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - VCE -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 3/5 KTX102U Q 2 (NPN TRANSISTOR) h FE - I C I C - VCE 6.0 200 1k COMMON EMITTER Ta=25 C 5.0 3.0 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 240 2.0 160 1.0 120 0.5 80 I B =-0.2mA 40 0 0 0 1 2 3 4 5 6 COMMON EMITTER 500 300 100 50 30 VCE =1V 10 0.1 7 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.3 1 3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 0.3 0.1 C Ta=25 C Ta=-25 C 0.03 0.01 0.1 0 10 = Ta 0.05 0.3 1 3 10 30 100 3 0.5 0.3 0.1 300 0.1 0.3 1 3 3k 100 300 100 50 30 COMMON EMITTER VCE =6V 1k 300 100 Ta=1 00 C Ta=2 5 C Ta=25 C COMMON EMITTER VCE =10V Ta=25 C BASE CURRENT I B (µA) TRANSITION FREQUENCY f T (MHz) 30 I B - V BE 30 10 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 2002. 6. 24 10 COLLECTOR CURRENT IC (mA) 500 300 10 300 1 fT - IC 1k 100 COMMON EMITTER I C /I B=10 Ta=25 C 5 COLLECTOR CURRENT I C (mA) 3k 30 VBE(sat) - I C COMMON EMITTER I C /I B=10 0.5 10 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 1 VCE =6V Ta=100 C Ta=25 C Ta=-25 C Revision No : 2 300 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 4/5 COLLECTOR POWER DISSIPATION P C (mW) KTX102U Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2002. 6. 24 Revision No : 2 5/5