SEMICONDUCTOR TECHNICAL DATA KTX321U EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. (Ultra Super mini type with 6 leads) 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process. A1 C Simplify circuit design. D D G 5 H EQUIVALENT CIRCUIT (TOP VIEW) 6 MARKING 4 6 5 4 2 3 1 2 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 H T 0.15+0.1/-0.05 EMITTER BASE DRAIN SOURCE GATE COLLECTOR 3 THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. Q1 MAXIMUM RATING (Ta=25 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + G BR Q1 T Type Name Q2 1 B1 C MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + US6 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V IC -500 mA ICP * -1 A Collector Power Dissipation PC * 150 mW Junction Temperature Tj 150 Tstg -55 150 Collector Current Storage Temperature Range * Single Pulse PW=1mS. ** 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Q2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGSS 20 V DC Drain Current ID 100 mA Drain Power Dissipation PC ** 150 mW Channel Temperature Tch 150 Storage Temperature Range Tstg -55 150 ** 120mW per element must not be exceeded. Each terminal mounted on a recommended land. 2003. 11. 20 Revision No : 0 1/6 KTX321U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V 270 - 680 - IC=-200mA, IB=-10mA - -100 -250 mV VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz VCB=-10V, IE=0, f=1MHz - 6.5 - pF hFE DC Current Gain Collector-Emitter Saturation Voltage VCE=-2V, IC=-10mA VCE(sat) fT Transition Frequency Cob Collector Output Capacitance Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL IGSS Gate Leakage Current ) TEST CONDITION VGS= 20V, VDS=0V MIN. TYP. MAX. UNIT - - 1 A V(BR)DSS ID=100 A, VGS=0V 30 - - V Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 25 - - mS Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 4 7 Drain-Source Breakdown Voltage Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 8.5 - pF Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 3.3 - pF Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 9.3 - pF - 50 - nS - 160 - nS Switching Time 2003. 11. 20 Turn-on Time ton Turn-off Time toff Revision No : 0 VDD=5V, ID=10mA, VGS=0 5V 2/6 KTX321U Q 1 (PNP TRANSISTOR) h FE - I C DC CURRENT GAIN h FE 1K Ta=125 C 500 Ta=25 C 300 Ta=-40 C 100 50 30 10 VCE =-2V -1 -10 -3 -30 -100 -300 -1K COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) VCE(sat) - I C -1K I C /IB =20 -500 -300 -100 125 -50 -30 Ta= 25 C C Ta= =-40 Ta -10 -5 -3 -1 -1 COLLECTOR CURRENT I C (mA) -3 -10K Ta=25 C -100 -50 -30 I C /IB =50 I C /IB =20 I C /IB =10 -10 -5 -3 -1 -3 -10 -30 -100 -300 Ta=-40 C -1K Ta=25 C C Ta=125 -500 -300 -1K -1 -3 -10 0 -0.5 -1.0 BASE-EMITTER VOLTAGE VBE (V) 2003. 11. 20 Revision No : 0 -1.5 TRANSITION FREQUENCY f T (MHz) Ta=2 5 C Ta=40 C 25 C Ta=1 COLLECTOR CURRENT I C (mA) -5 -3 -1 -100 -300 -1K f T - IC -100 -10 -30 COLLECTOR CURRENT I C (mA) VCE =-2V -50 -30 -1K -3K I C - VBE -500 -300 -300 I C /IB =20 COLLECTOR CURRENT I C (mA) -1K -100 -5K -100 -1 -30 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -10 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -500 -300 C 1K VCE =-2V Ta=25 C 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) 3/6 KTX321U 1K I E =0A f=1MHz Ta=25 C 500 300 100 50 30 C ib 10 C ob 5 3 1 -0.1 -0.3 -1 -3 -10 -30 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2003. 11. 20 Revision No : 0 -100 COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) C ob - VCB , C ib - VEB Pc - Ta 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 4/6 KTX321U Q 2 (N CHANNEL MOS FIELD EFFECT TRANSISTOR) I D - V DS I D - VDS 2.5V 2.2V 80 60 2.0V 1.8V 40 1.6V 20 0 1.0 COMMON SOURCE Ta=25 C DRAIN CURRENT ID (mA) DRAIN CURRENT I D (mA) 100 (LOW VOLTAGE REGION) 1.4V VGS =1.2V 0 2 4 6 8 2.5V 1.15V 0.8 0.6 1.1V 0.4 1.05V 0.2 1.0V VGS =0.9V 10 0 12 0 DRAIN-SOURCE VOLTAGE VDS (V) 0.2 0.1 Ta=25 C D 1 I DR G 0.1 S 0.03 -0.8 -1.2 10 3 1 0.3 0.03 0 1 100 CAPACITANCE C (pF) 50 30 10 5 1 3 5 10 30 DRAIN CURRENT I D (mA) 2003. 11. 20 3 4 5 C - V DS - ID COMMON SOURCE V DS =3V Ta=25 C 100 fs FORWARD TRANSFER ADMITTANCE Y (mS) 300 2 GATE-SOURCE VOTAGE VGS (V) DRAIN-SOURCE VOTAGE VDS (V) Y fs Ta=25 C Ta=-25 C 0.1 0.01 -1.6 C VGS =0 -0.4 0.6 100 10 0 0.5 COMMON SOURCE VDS =3V 30 Ta= COMMON SOURCE DRAIN CURRENT ID (mA) DRAIN REVERSE CURRENT I DR (mA) 30 0.3 0.4 I D - VGS 100 100 0.01 0.3 DRAIN-SOURCE VOLTAGE VDS (V) I DR - VDS 3 COMMON SOURCE Ta=25 C 1.2V Revision No : 0 50 100 COMMON SOURCE VGS =0 f=1MHz Ta=25 C 50 30 C oss 10 C iss 5 3 1 0.1 C rss 0.3 0.5 1 3 5 10 DRAIN-SOURCE VOLTAGE VDS (V) 20 5/6 KTX321U VDS(ON) - I D 1K 0.1 0.05 0.03 500 300 t on tr t off tf 100 50 5V V IN 0 10µs 30 0.01 0.005 1 3 5 10 30 50 100 10 1 ID 3 DRAIN CURRENT I D (mA) VDD =5V D.U. < = 1% VIN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C VOUT RL 1 0.5 0.3 50Ω COMMON SOURCE VGS =2.5V Ta=25 C SWITCHING TIME t (ns) DRAIN-SOURCE ON VOLTAGE VDS(ON) (V) 2 t - ID VDD 5 10 30 50 100 DRAIN CURRENT I D (mA) DRAIN POWER DISSIPATION PD (mW) P D - Ta 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT ID 5V VOUT D.U. < = 1% VIN RL 10µs VIN VIN (Z OUT =50Ω) COMMON SOURCE VDD Ta=25 C 5V 0 V IN :t r , t f < 5ns 50Ω 0 VDD =5V 90% 10% V DD 10% VOUT 90% VDS (ON) t on 2003. 11. 20 Revision No : 0 tf tr t off 6/6