KTX403U SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE TECHNICAL DATA SWITCHING APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B B1 FEATURES Including two(TR, Diode) devices in USV. 1 5 A 2 C Simplify circuit design. A1 C (Ultra Super Mini type with 5 leads) 3 Reduce a quantity of parts and manufacturing process. 4 D DIM A A1 B B1 C D G H H T EQUIVALENT CIRCUIT (TOP VIEW) 5 Marking 4 D1 1 2 4 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 CK Q1 3 1 MAXIMUM RATINGS (Ta=25 G Type Name 5 T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25+ 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 2 ANODE BASE EMITTER COLLECTOR CATHODE 3 USV ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 6 IC 500 Collector Current ICP * 1 A Collector Power Dissipation PC 100 Junction Temperature Tj 150 Tstg -55~125 SYMBOL RATING UNIT VRM 30 V Reverse Voltage VR 30 V Maximum (Peak) Forward Current IFM 300 Average Forward Current IO 200 Surge Current (10mS) IFSM 1 Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Storage Temperature Range 2003. 3. 11 Revision No : 2 A 1/4 KTX403U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=15V, IE=0 MIN. TYP. MAX. - - 100 UNIT Collector-Base Breakdown Voltage V(BR)CBO IE=10 15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1 12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 6 - - V - hFE VCE=2V, IC=10 270 - 680 VCE(SAT) IC=200 , IB=10 - 90 250 fT VCE=2V, IC=10 - 320 - - 7.5 - MIN. TYP. MAX. DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Cob Collector Output Capacitance , f=100 VCB=10V, IE=0, f=1 DIODE (SBD) D1 CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION VF(1) IF=1mA - 0.22 - VF(2) IF=10mA - 0.29 - VF(3) IF=100mA - 0.38 - VF(4) IF=200mA - 0.43 0.55 Reverse Current IR VR=30V - - 50 Total Capacitance CT VR=0, f=1 - 50 - 2003. 3. 11 Revision No : 2 UNIT V 2/4 KTX403U Q 1 (NPN TRANSISTOR) h FE - I C 500 Ta=125 C Ta=25 C 300 Ta=-40 C 100 50 30 VCE =2V 1 1K 10 30 100 300 1 1 3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10 30 100 300 0 3 10 30 100 300 5K 3K Ta=-40 C 1K 500 Ta=25 C 5 C Ta=12 300 1 3 10 30 100 300 I C - VBE fT - IC 0.5 1.0 Revision No : 2 1.5 1K I C /IB =20 COLLECTOR CURRENT I C (mA) 5 3 1 1 COLLECTOR CURRENT I C (mA) Ta=1 25 C 10 5 3 1 C C C 25 0 Ta= Ta=-4 10 100 1K 100 50 30 125 Ta= 10K VCE =2V 500 300 50 30 VBE(sat) - I C I C /I B =20 10 I C/I B = 5 3 100 VCE(sat) - I C I C /IB =50 10 I C /IB =20 COLLECTOR CURRENT I C (mA) 100 50 30 1K 500 300 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2003. 3. 11 1K Ta=25 C 500 300 1K COLLECTOR CURRENT I C (mA) 3 TRANSITION FREQUENCY f T (MHz) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 10 Ta=2 5 C Ta=40 C DC CURRENT GAIN h FE 1K COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) VCE(sat) - I C 1K 1K VCE =2V Ta=25 C 500 300 100 50 30 10 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) 3/4 KTX403U COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) C ob - VCB , C ib - VEB 1K I E =0A f=1MHz Ta=25 C 500 300 100 50 30 C ib 10 C ob 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) D 1 (SBD) 10 IR 10 Ta=25 C 2 REVERSE CURRENT I R (µA) FORWARD CURRENT I F (mA) I F - VF 10 1 10 -1 10 -2 10 -3 10 -4 0 100 200 300 400 500 - VR Ta=25 C 5 1 0.5 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (mV) C T - VR TOTAL CAPACITANCE C T (pF) 100 Ta=25 C f=1MHz 50 10 5 0 5 10 15 20 25 30 REVERSE VOLTAGE V R (V) 2003. 3. 11 Revision No : 2 4/4