TI SN28846DW

TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
•
•
•
•
•
•
•
•
•
•
•
•
High-Resolution, Solid-State Image Sensor
for NTSC B/W TV Applications
8-mm Image-Area Diagonal, Compatible
With 1/2” Vidicon Optics
755 (H) x 242 (V) Active Elements in
Image-Sensing Area
Advanced On-Chip Signal Processing
Low Dark Current
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 70 dB
High Sensitivity
High Photoresponse Uniformity
High Blue Response
Single-Phase Clocking
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
DUAL-IN-LINE PACKAGE
(TOP VIEW)
20
19
18
17
16
15
14
13
12
11
SUB 1
IAG 2
ABG 3
ADB 4
OUT3 5
OUT2 6
OUT1 7
AMP GND 8
CDB 9
SUB 10
SUB
IAG
ABG
SAG
SRG3
SRG2
SRG1
NC
TRG
IDB
NC – No internal connection
description
The TC245 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W
NTSC TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC245 is configured into 242 lines with 786 elements in each line. Twenty-nine
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
in alternate fields by one-half of a vertical line during the charge integration period, effectively increasing the
vertical resolution and minimizing aliasing. The device can also be operated as a 755 (H) by 242 (V)
noninterlaced sensor with significant reduction in the dark signal.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip
converts charge to signal voltage. The signal is further processed by a low-noise, state-of-the-art correlated
clamp-sample-and-hold circuit. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability. The image is read out through three outputs, each of which reads out every
third image column.
The TC245 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking. The TC245 is characterized for operation
from –10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright  1991, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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2-1
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
functional block diagram
Top Drain
IAG
2
19
ABG
Image Area With
Blooming Protection
3
18
IAG
ABG
Dark Reference Elements
ADB
OUT3
4
17
SAG
Storage Area
Amplifiers
5
IDB
OUT2
OUT1
11
6
16
15
14
7
SRG3
SRG2
SRG1
Multiplexer, Transfer
Gates, and Serial Registers
12
TRG
Clearing Drain
11 Dummy
Elements
8
AMP GND
9
CDB
detailed description
The TC245 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer block with serial registers and transfer gates, and (4) the low-noise signal-processing
amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional
block diagram.
2-2
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TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
sensor topology diagram
244
755 + 1/2 + 1/2
Effective Imaging Area
1
1
1/2
29 + 1/2
2 Lines
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
Reverse Transfer
Reverse Transfer
11
252
10
11
252
10
251 + 1/2 + 1/2
9.5
11.5
Dummy Pixels
OPB
Terminal Functions
PIN
I/O
DESCRIPTION
NAME
ABG†
NO.
3
I
Antiblooming gate
ABG†
18
I
Antiblooming gate
ADB
4
I
Supply voltage for amplifier drain bias
AMP GND
8
CDB
IAG†
9
I
Supply voltage for clearing drain bias
2
I
Image-area gate
IAG†
19
I
Image-area gate
IDB
11
I
Supply voltage for input diode bias
OUT1
7
O
Output signal 1
OUT2
6
O
Output signal 2
OUT3
5
O
Output signal 3
SAG
17
I
Storage-area gate
SRG1
14
I
Serial-register gate 1
SRG2
15
I
Serial-register gate 2
SRG3
SUB†
16
I
Serial-register gate 3
1
Substrate and clock return
SUB†
SUB†
10
Substrate and clock return
TRG
12
Amplifier ground
20
Substrate and clock return
I
Transfer gate
† All pins of the same name should be connected together externally.
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2-3
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
image-sensing and storage areas
Figure 1 and Figure 2 show cross sections with potential well diagrams and top views of image-sensing and
storage-area elements. As light enters the silicon in the image-sensing area, free electrons are generated and
collected in the potential wells of the sensing elements. During this time, blooming protection is activated by
applying a burst of pulses to the antiblooming gate inputs every horizontal blanking interval. This prevents
blooming caused by the spilling of charge from overexposed elements into neighboring elements. After
integration is complete, the signal charge is transferred into the storage area.
There are 29 full columns and one half-column of elements at the right edge of the image-sensing area that are
shielded from incident light; these elements provide the dark reference used in subsequent video processing
circuits to restore the video black level. There are also one full column and one half-column of light-shielded
elements at the left edge of the image-sensing area and two lines of light-shielded elements between the
image-sensing and image-storage areas (the latter prevent charge leakage from the image-sensing area into
the image-storage area).
multiplexer with transfer gates and serial registers
The multiplexer and transfer gates transfer charge line by line from the storage-area columns into the
corresponding serial registers and prepare it for readout. Figure 3 illustrates the layout of the multiplexing gate
that vertically separates the pixels for input into the serial registers. Figure 4 shows the layout of the interface
region between the serial-register gates and the transfer gates. Multiplexing is activated during the horizontal
blanking interval by applying appropriate pulses to the transfer gates and serial registers; the required pulse
timing is shown in Figure 5. A drain is also included to provide the capability to clear the image-sensing and
storage areas of unwanted charge. Such charge can accumulate in the imager during the start-up of operation
or under special circumstances when nonstandard TV operation is desired.
correlated clamp-sample-and-hold amplifier with charge-detection nodes
Figure 6 illustrates the correlated clamp-sample-and-hold amplifier circuit. Charge is converted into a video
signal by transferring the charge onto a floating diffusion structure in detection node1 that is connected to the
gate of MOS transistor Q1. The proportional charge-induced signal is then processed by the circuit shown in
Figure 6. This circuit consists of a low-pass filter formed by Q1 and C2, coupling capacitor C1, dummy detection
node 2, which restores the dc bias on the gate of Q3, sampling transistor Q5, holding capacitor C3, and output
buffer Q6. Transistors Q2, Q4, and Q7 are current sources for each corresponding stage of the amplifier. The
parameters of this high-performance signal-processing amplifier have been optimized to minimize noise and
maximize the video signal.
The signal processing begins with a reset of detection node 1 and restoration of the dc bias on the gate of Q3
through the clamping function of dummy detection node 2. After the clamping is completed, the new charge
packet is transferred onto detection node 1. The resulting signal is sampled by the sampling transistor Q5 and
is stored on the holding capacitor C3. This process is repeated periodically and is correlated to the charge
transfer in the registers. The correlation is achieved automatically since the same clock lines used in registers
φ-S2 and φ-S3 for charge transport serve for reset and sample. The multiple use of the clock lines significantly
reduces the number of signals required to operate the sensor. The amplifier also contains an internal voltage
reference generator that provides the reference bias for the reset and clamp transistors. The detection nodes
and the corresponding amplifiers are located some distance away from the edge of the storage area. Therefore,
eleven dummy elements are incorporated at the end of each serial register to span the distance. The location
of the dummy elements, which are considered to be part of the amplifiers, is shown in the functional block
diagram.
2-4
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TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
8.5 µm(H)
Light
Clocked Barrier
φ-IAG
19.75 µm(V)
Virtual Barrier
φ-ABG
Antiblooming
Clocking Levels
Antiblooming Gate
Virtual Well
Clocked Well
Accumulated Charge
Figure 1. Charge-Accumulation Process
φ-PS
Clocked Phase
Virtual Phase
Channel Stops
Figure 2. Charge-Transfer Process
Channel Stops
Virtual
Well
Clocked
Wells
Serial-Register
Gate
Clocked
Well
Channel
Stop
Multiplexing
Gate
Transfer
Gate
Figure 3. Multiplexing-Gate Layout
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Figure 4. Interface-Region Layout
• DALLAS, TEXAS 75265
2-5
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
Composite
Blanking
ABG
IAG
SAG
TRG
SRG 1
SRG2
SRG3
Expanded
Horizontal
Blanking Interval
Figure 5. Timing Diagram
2-6
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TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
Reference Generator
ADB
Reset Gate
and
Output
Diode
Detection Node 1
CCD Register
Clocked Virtual
Gate
Gate
Detection
Node 2
Q3
Q1
Q6
C1
Q2
SRG1
C2
SRG2
Q5
VO
C3
Q4
Q7
SRG3
Figure 6. Correlated Clamp-Sample-and-Hold Amplifier Circuit Diagram
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2-7
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
spurious nonuniformity specification
The spurious nonuniformity specification of the TC245 CCD grades – 10, – 20, – 30, and – 40 is based on several
sensor characteristics:
•
•
•
•
•
•
Amplitude of the nonuniform pixel
Polarity of the nonuniform pixel
– Black
– White
Location of the nonuniformity (see Figure 7)
– Area A
– Element columns near horizontal center of the area
– Element rows near vertical center of the area
– Area B
– Up to the pixel or line border
– Up to area A
– Other
– Edge of the imager
– Up to area B
Nonuniform pixel count
Distance between nonuniform pixels
Column amplitude
The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 8. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 9.
18 Pixels
377
Pixels
233
Lines
A
7
Lines
B
11
Lines
20 Pixels
Figure 7. Sensor Area Map
2-8
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TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
mV
Amplitude
% of Total
Illumination
t
t
Figure 8. Pixel Nonuniformity,
Dark Condition
Figure 9. Pixel Nonuniformity,
Illuminated Condition
The grade specification for the TC245 is as follows (CCD video-output signal is 50 mV ±10 mV):
Pixel nonuniformity:
DARK CONDITION
PART
NUMBER
TC245-20
TC245-30
TC245-40
PIXEL
AMPLITUDE, x
AMPLITUDE
(mV)
ILLUMINATED CONDITION
NONUNIFORM PIXEL TYPE
WHITE BLACK
W/B†
AREA
AREA
AREA
A
B
A
B
A
B
DISTANCE
SEPARATION
% OF TOTAL
ILLUMINATION
AREA A
AREA B
TOTAL
COUNT‡
x > 3.5
0
0
0
0
0
0
x>5
0
0
2.5 < x ≤ 3.5
2
5
2
5
2
5
5.0 < x ≤ 7.5
2
5
x > 3.5
0
0
0
0
0
0
x > 7.5
0
0
3.5 < x ≤ 7
3
7
3
7
3
7
7.5 < x ≤ 15
3
7
x>7
0
0
0
0
0
0
x > 15
0
0
X
Y
AREA
—
—
—
—
12
100
80
A
15
—
—
—
† White and black nonuniform pixel pair
‡ The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black
pixels in the illuminated condition. The sum of all nonuniform combinations will not exceed the total count.
Column nonuniformity:
WHITE
BLACK
AREAS
A AND B
AREAS
A AND B
x > 0.3
0
0
x > 0.5
0
0
x > 0.7
0
0
PART
NUMBER
COLUMN
AMPLITUDE, x
AMPLITUDE
(mV)
TC245-20
TC245-30
TC245-40
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2-9
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range for ADB, CDB, IDB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V
Input voltage range for ABG, IAG, SAG, SRG, TRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V to 15 V
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 30°C to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 30°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
recommended operating conditions
Supply voltage, ADB
MIN
NOM
MAX
11
12
13
Substrate bias voltage
0
High level
SRG1 SRG2
SRG1,
SRG2, SRG3
Input voltage,
voltage VI‡
1.5
Intermediate level§
IAG
Low level
– 11
High level
1.5
Low level
–11
High level
2
Low level
SAG
TRG
2.5
2.5
–9
4
6
– 2.3
–7.5
–7
– 6.5
High level
1.5
2
2.5
Low level
– 11
High level
1.5
2
2.5
Low level
– 11
V
–9
–9
3.58
SRG1, SRG2, SRG3, TRG
4.77
ABG
Capacitive load
V
–9
2
IAG, SAG
Clock
Cl k frequency,
f q
y fclock
V
– 5.7
Intermediate level§
ABG
2
UNIT
MHz
MH
2
OUT1, OUT2, OUT3
Operating free-air temperature, TA
– 10
6
pF
45
°C
‡ The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.
§ Adjustment is required for optimal performance.
2-10
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TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
electrical characteristics over recommended operating range of supply voltage, TA = –10°C to 45°C
PARAMETER
Dynamic range (see Note 2)
Antiblooming disabled (see Note 3)
Charge conversion factor
Charge transfer efficiency (see Note 4)
Signal response delay time, τ (see Note 5 and Figure 13)
Gamma (see Note 6)
Output resistance
1/f noise (5 kHz)
Noise voltage
MIN
TYP†
60
70
UNIT
dB
3.8
4
4.2
0.99990
0.99995
1
18
20
22
0.97
0.98
0.99
700
800
µV/e
ns
Ω
0.1
Random noise (f = 100 kHz)
µV/√Hz
0.08
Noise equivalent signal
30
Rejection ratio at 4.77 MHz
MAX
ADB (see Note 7)
20
SRG1, SRG2, SRG3 (see Note 8)
40
ABG (see Note 9)
20
Supply current
electrons
5
IAG
mA
6500
SRG1, SRG2, SRG3
Input capacitance, Ci
dB
68
ABG
2400
TRG
180
SAG
6800
pF
† All typical values are at TA = 25 °C
NOTES: 2. Dynamic range is – 20 times the logarithm of the mean noise signal divided by the saturation output signal.
3. For this test, the antiblooming gate must be biased at the intermediate level.
4. Charge transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical input signal.
5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state.
6. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this
value represents points near saturation):
ǒ
Ǔ +ǒ
Exposure (2)
Exposure (1)
g
Ǔ
Output signal (2)
Output signal (1)
7. ADB rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.
8. SRGn rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn.
9. ABG rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
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2-11
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
optical characteristics, TA = 40°C, integration time = 16.67 ms (unless otherwise noted)
PARAMETER
Sensitivity
No IR Filter
With IR Filter
MIN
TYP
MAX
197
Measured at VU
(see Notes 10 and 11)
UNIT
mV/lx
24
Saturation signal, Vsat (see Note 12)
Antiblooming disabled, interlace off
320
mV
Maximum usable signal, Vuse
Antiblooming enabled, interlace on
180
mV
Blooming overload ratio (see Note 13)
Interlace on
100
Interlace off
200
80 x 103
Image-area well capacity
Smear (see Note 14)
See Note 15
Dark current
Interlace off
Dark signal (see Note 16)
TA = 45°C
Pixel uniformity
Output signal = 50 mV ±10 mV
Column uniformity
Output signal = 50 mV ±10 mV
Shading
Output signal = 100 mV
TA = 21°C
TC245-30
electrons
0.0004
nA/cm2
0.027
5.5
TC245-40
6
TC245-30
3.5
TC245-40
5
TC245-30
0.5
TC245-40
0.7
mV
mV
mV
15%
NOTES: 10.
11.
12.
13.
14.
Sensitivity is measured at an integration time of 16.67 ms with a source temperature of 2856 K. A CM-500 filter is used.
VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
Blooming overload ratio is the ratio of blooming exposure to saturation exposure.
Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image- area vertical height with recommended clock frequencies.
15. Exposure time is 16.67 ms, the fast-dump clocking rate during vertical timing is 3.58 MHz, and the illuminated section is 1/10 of the
height of the image section.
16. Dark-signal level is measured from the dummy pixels.
2-12
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TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
Blooming Point
With Antiblooming
Enabled
VO
Blooming Point
With Antiblooming
Disabled
Dependent On
Well Capacity
Vsat (min)
Level Dependent
Upon Antiblooming
Gate High Level
Vuse (max)
Vuse (typ)
DR
Vn
Lux
(light input)
DR (dynamic range)
+ camera whiteV clip voltage
n
Vn = noise floor voltage
Vsat (min) = minimum saturation voltage
Vuse (max) = maximum usable voltage
Vuse (typ) = typical user voltage (camera white clip)
NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max).
B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the Vuse (typ),
the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.
Figure 10. Typical Vsat, Vuse Relationship
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2-13
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
VIH min
100%
90%
Intermediate Level
10%
VIL max
0%
tr
tf
Slew rate between 10% and 90% = 70 to 120 V/µs, tr = 150 ns, tf = 90 ns.
Figure 11. Typical Clock Waveform for IAG, ABG and SAG
VIH min
100%
90%
10%
VIL max
0%
tr
tf
Slew rate between 10% and 90% = 300 V/µs, tr = tf = 15 ns.
Figure 12. Typical Clock Waveform for SRG and TRG
1.5 V to 2.5 V
SRG
–9V
– 9 V to – 11 V
0%
OUT
90%
100%
CCD Delay
τ
10 ns
15 ns
Sample
and
Hold
Figure 13. SRG and CCD Output Waveforms
2-14
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TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
TYPICAL CHARACTERISTICS
CCD SPECTRAL RESPONSIVITY
1
Responsivity – A/W
60
50
40
30
20
10
0.1
5
3
2
0.01
Quantum Efficiency – %
100
VADB = 12 V, TA = 25°C
No IR Filter
Light Power = 1.5 µW/cm2
Light Box: Canon SA702
0.001
300 400
500
600
700
800
900 1000 1100
Incident Wavelength – nm
Figure 14
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2-15
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
APPLICATION INFORMATION
DC VOLTAGES
VSS
V
ADB
ADB
VCC
VSS
V
ABLVL
IALVL
VABG +
VABG –
TMS3473B
20
1
IALVL
VSS
2
I/N
17
4
VCC
ABIN
MIDSEL
6
IAOUT
SAIN
ABLVL
15
19
14
18
13
17
ABOUT
PD
GND
SAOUT
VCC
VABG+
VSS
VABG–
16
12
1
SUB
SUB
IAG
IAG
ABG
ABG
SAG
ADB
SRG3
2
3
TL1593
4
5
VABG –
6
SRG2
14
Parallel Driver
OUT2
SEG1
13
NC
9
TRG
CIN1
S/H3
AIN2
DIG VCC
CIN2
OUT1
7
AIN3
OUT2
8
CIN3
OUT3
15
14
13
12 OUT3
11 OUT2
ANLG GND
10 OUT1
9
DGTL GND
Sample-and-Hold
PD
SRG3IN
VCC
SRG2IN
SRG3OUT
SRG1IN
SRG2OUT
TRGIN
SRG1OUT
17
16
15
NC
14
13
TRGOUT
VCC
12
9
SEL1OUT
VCC
VCC
VCC
10
11
24
25
26
27
T
18
17
16
15 14
13 12
HIGH
23
20 19
SB
22 21
GPS
SEL1
Serial Driver
VD
VSS
WHTA
8
S/H2
18
NC
6
7
AIN1
SEL0
VGATE
5
GND
+
4.7 µF
Image Sensor
S/H1
19
HGATE
4
VSS
SEL0OUT
SUB
VCC
3
20
CLK2M
2
100 Ω
10
IDB
SN28846
1
5
16
ANLG VCC
6
+
CDB
11
100 Ω
4.7 µF
AMP GND
3
4
+
8
12
VABG+
100 Ω
4.7 µF
7
OUT1
2
+
OUT3
15
11
1
4.7 µF
GP
10
TC245
20
16
ABLVL
7
9
47 kΩ
ABSR
IAIN
8
22 kΩ
18
3
5
19
IASR
VD2
IALVL
12 V
5V
– 10 V
2V
– 2.5 V
–5 V
4V
–6 V
S1
ABS0
S2
SC(90)
S3
SC
PD
30
PS
CBLK
GT
CSYNC
ABIN
CP1
PI
CP2
VCC
8
7
5
4
3
32
2
BCP2
1
35 36 37 38
39 40
41 42 43
FI
E/L
VDS
HCR
VCR
BCP1
GT2
GT1/SH3
SH1
X2
X1
34
GT3/SH2
MODE
GND
20 pF
9
6
SN28835
NTSC Timer
31
33
10
BF
28
29
11
ABS1
44
Oscillator
14.3-MHz
15 pF
SUPPORT CIRCUITS
DEVICE
PACKAGE
APPLICATION
FUNCTION
SN28835FS
44 pin flatpack
Timing generator
NTSC timing generator (CCD, S/H, processing)
SN28846DW
20 pin small outline
Serial driver
Driver for TRG, SRG1, SRG2, SRG3
TMS3473BDW
20 pin small outline
Parallel driver
Driver for IAG, SAG, ABG
TL1593CNS
16 pin small outline (EIAJ)
Sample and hold
Three-channel sample-and-hold IC
Figure 15. Typical Application Circuit Diagram
2-16
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TC245
786- × 488-PIXEL CCD IMAGE SENSOR
SOCS019A – DECEMBER 1991
MECHANICAL DATA
The package for the TC245 consists of a ceramic base, a glass window, and a 20-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
fit into mounting holes with 1,78 mm (0.070 in) center-to-center spacings.
TC245 (20 pin)
Index
Mark
7,60 (0.299)
7,20 (0.283)
Rotation ± 90°
1,91 (0.075)
1,65 (0.065)
6,50 (0.256)
6,10 (0.240)
18,30 (0.720)
MAX
Optical
Center
15,64 (0.616)
15,44 (0.608)
Package
Center
15,14 (0.596)
14,84(0.584)
1,78 (0.070)
0,76 (0.030)
0,51 (0.020)
0,41 (0.016)
5,50 (0.217)
3,90 (0.154)
13,87 (0.546)
13,67 (0.538)
3,38(0.133)
2,72 (0.107)
Focus
Plane
4,01 (0.158) MAX
1,70 (0.067)
1,10 (0.043)
0,33 (0.013)
0,17 (0.007)
15,54 (0.612)
14,94 (0.588)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
7/94
NOTES: A. The center of the package and the center of image area not coincident.
B. The distance from the top of the glass to the image sensor surface is typically 1 mm (0.04 inch). The glass is 0.95 ± 0.08 mm thick
and has an index of refraction of 1.53.
C. Each pin centerline is located within 0.18 mm of its true longitudinal position.
D. Maximum rotation of the sensor within the package is 1.5°.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
2-17
SOCS019A – DECEMBER 1991
2-18
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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