Photocoupler K5610 • K5611 DIMENSION These Photocouplers consist of a Gallium Arsenide Infrared Emitting (Unit : mm) Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • TTL Compatible Output • Collector-Emitter Voltage : Min.70V • Current Transfer Ratio : Typ.50% (at IF=5mA, VCE=5V) • Electrical Isolation Voltage : AC5000Vrms • UL Recognized File No. E107486 PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4 K5610 APPLICATIONS K5611 • Interface between two circuits of different potential • Vending Machine, Copiers • Measuring Instrument • Home Appliances MAXIMUM RATINGS Parameter (Ta=25℃ ) Forward Current Input Reverse Voltage *1 Symbol Rating Unit IF 50 mA VR 5 V IFP 1 A PD 70 mW Collector-Emitter Breakdown Voltage BVCEO 70 V Emitter-Collector Breakdown Voltage BVECO 7 V Collector-Base Breakdown Voltage** BVCBO 80 V IC 50 mA PC 150 mW Viso AC5000 Vrms Storage Temperature Tstg -55~+125 ℃ Operating Temperature Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW Peak Forward Current Power Dissipation Output Collector Current Collector Power Dissipation Input to Output Isolation Voltage Lead Soldering Temperature *2 *3 Total Power Dissipation ** Except for K5610 *1. Input current with 100㎲ pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 1 2 3 6 5 4 1 2 3 Photocoupler K5610 • K5611 ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol Forward Voltage VF IF=10mA - 1.15 1.30 V Reverse Current IR VR=5V - - 10 ㎂ Capacitance CT V=0, f=1MHz - 30 - pF Collector-Emitter Breakdown Voltage BVCEO IC=1mA 70 - - V Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 7 - - V Collector-Base Breakdown Voltage ** BVCBO IC=0.1mA 80 - - V Collector Dark Current ICEO IF=0, VCE=24V - - 100 nA Capacitance CCE VCE=0, f=1MHz - 10 - pF CTR IF=5mA, VCE=5V 50 - 600 % VCE(SAT) IF=5mA, IC=1mA - - 0.3 V 1 Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled Condition (Ta=25℃ , unless otherwise noted) Typ. Min. Max. Unit. Input-Output Capacitance CIO V=0, f=1MHz - Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 10 11 - pF - Ω Rise Time tr VCE=10V, RL=100Ω - 3 - ㎲ Fall Time tf IC=2mA - 3 - ㎲ ** Except for K5610 *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K5610 • K5611 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 100 80 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta (℃ ) Collector Current vs. Collector-Emitter Voltage Dark Current I CEO (㎂) Collector Current I C (mA) I F =20mA 30 P C(max.) I F =10mA 20 I F =5mA 10 I F =1mA 0 2 4 6 8 10 40 20 60 80 tf tr 10 1 0 20 40 60 80 I F =20mA 10 I F =10mA I F =5mA 1 I F =1mA 0 -20 100 0 20 40 Switching Time Test Circuit R VIN VCC RL Ta=25℃ VCE=5V VO 10 1 Test Circuit 0.1 Input 0.01 0.1 1.0 Load Resistance R L (㏀) 5.0 0.001 0.1 80 60 Ambient Temperature Ta (℃ ) Output 10% 0.1 1.6 Collector Current vs. Ambient Temperature Collector Current vs. Forward Current VCE =10V I C=2mA Ta=25℃ 1.2 Dark Current vs. Ambient Temperature 0.01 100 0.8 Forward Voltage V F (V) Ambient Temperature Ta (℃) Collector Current I C (mA) 100 Ta=-55℃ 0.4 100 0.1 Response Time vs. Load Resistance 500 20 100 Collector-Emitter Voltage VCE (V) Response Time tr , t f (μs) 0 VCE =24V 0.001 Ta=25℃ Ambient Temperature Ta (℃ ) I F =30mA 40 Ta =70℃ 40 0 1 Ta=25℃ 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 1 10 Forward Current I F (mA) 3/3 3/3 100 90% tr Waveform tf