KODENSHI K5621

Photocoupler
K5620 • K5621
DIMENSION
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
(Unit : mm)
Diode and a Silicon NPN PhotoDarlington transistor in a 6-pin
package.
FEATURES
• Collector-Emitter Voltage : Min.35V
• Current Transfer Ratio : Typ.500% (at IF=1mA, VCE=2V)
• Electrical Isolation Voltage : AC5000Vrms
• UL Recognized File No. E107486
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
K5620
APPLICATIONS
• Interface between two circuits of different potential
• Telephone Line Receiver
• Automatic Vending Machine
• Power Supply Regulators
MAXIMUM RATINGS
Parameter
Reverse Voltage
Input
*1
Rating
Unit
IF
60
mA
VR
5
V
1
A
PD
150
mW
TJ
125
Collector-Emitter Breakdown Voltage
BVCEO
35
V
Emitter-Collector Breakdown Voltage
BVECO
6
V
Collector-Base Breakdown Voltage**
BVCBO
35
V
IC
50
mA
PC
150
mW
Viso
AC5000
Vrms
Tstg
-55~+125
℃
Topr
-30~+100
℃
Tsol
260
℃
Ptot
200
mW
Power Dissipation
Junction Temperature
Output
Symbol
IFP
Peak Forward Current
Collector Current
Collector Power Dissipation
Input to Output Isolation Voltage
*2
Storage Temperature
Operating Temperature
Lead Soldering Temperature
*3
Total Power Dissipation
5
4
1
2
3
6
5
4
1
2
3
K5621
(Ta=25℃ )
Forward Current
6
** Except for K5620
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
1/3
Photocoupler
K5620 • K5621
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Input
Output
Symbol
Forward Voltage
VF
IF=10mA
-
1.15
1.30
V
Reverse Current
IR
VR=5V
-
-
10
㎂
Capacitance
CT
V=0, f=1MHz
-
30
-
pF
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
35
-
-
V
Emitter-Collector Breakdown Voltage
BVECO
IE=0.1mA
6
-
-
V
Collector-Base Breakdown Voltage **
BVCBO
IC=0.1mA
35
-
-
V
Collector Dark Current
ICEO
IF=0, VCE=10V
-
-
100
nA
Capacitance
CCE
VCE=0, f=1MHz
-
10
-
pF
CTR
IF=1mA, VCE=2V
500
-
%
VCE(SAT)
IF=1mA, IC=2mA
-
0.85
1.0
V
1
Current Transfer Ratio
*4
Collector-Emitter Saturation Voltage
Coupled
Condition
(Ta=25℃ , unless otherwise noted)
Min.
Max.
Unit.
Typ.
Input-Output Capacitance
CIO
V=0, f=1MHz
-
-
pF
Input-Output Isolation Resistance
RIO
RH=40~60%, V=500V
-
10
11
-
Ω
Rise Time
tr
VCE=10V, RL=100Ω
-
100
-
㎲
Fall Time
tf
IC=2mA
-
100
-
㎲
** Except for K5620
*4. CTR=(IC/IF) X 100 (%)
2/3
Photocoupler
K5620 • K5621
Forward Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
250
50
40
30
20
10
20
0
40
80
60
100
200
150
100
50
0
-20
Ambient Temperature Ta (℃)
60
I F=2.5mA
30
I F=2mA
P C(max.)
I F=1.5mA
Ta=-55℃
20
40
60
80
0.4
100
20
I F=1mA
10
I F =0.5mA
2
4
6
8
10
Collector-Emitter Voltage VCE (V)
VCE =24V
VCE =10V
0.001
0
20
40
VCC
RL
VO
Test Circuit
Input
Output
10%
90%
tr
80
Ambient Temperature Ta (℃)
Switching Time Test Circuit
R
60
tf
Waveform
3/3
1.6
2.0
Collector Current vs.
Forward Current
1
0.01
1.2
0.8
Forward Voltage VF(V)
100
0.1
Ta=25℃
40
~
Dark Current ICEO (uA )
Collector Current IC (mA)
20
10
I F=3mA
VIN
Ta=70℃
80
Dark Current vs.
Ambient Temperature
Ta =25℃
0
100
Ambient Temperature Ta (℃)
Collector Current vs.
Collector-Emitter Voltage
40
120
0
0
Collector Current IC (mA)
0
-20
140
Forward Current IF (mA)
Collector Power Dissipation
PC (mW)
Forward current I F (mA)
60
Forward Current vs.
Forward Voltage
60
50
40
30
20
10
0
100
Ta=25℃
V CE =2V
1
3
5
7
9
Forward Current IF (mA)
11