2N5114 SERIES SINGLE P-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE 75Ω LOW CAPACITANCE 6pF TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 200°C Junction Operating Temperature -55 to 200°C G 2 S 1 3 D Maximum Power Dissipation Continuous Power Dissipation 500mW Maximum Currents Gate Current -50mA Maximum Voltages Gate to Drain 30V Gate to Source 30V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP 2N5114 MIN BVGSS Gate to Source Breakdown Voltage 30 VGS(off) Gate to Source Cutoff Voltage 5 VGS(F) Gate to Source Forward Voltage VDS(on) Drain to Source On Voltage MAX 2N5115 MIN MAX 30 10 -0.7 -1 -1.0 -1.3 3 2N5116 MIN 1 Drain to Source Saturation Current2 IGSS Gate Leakage Current 5 IG Gate Operating Current -5 Drain Cutoff Current 500 -60 500 Drain to Source On Resistance Linear Integrated Systems IG = -1mA, VDS = 0V VGS = 0V, ID = -15mA VGS = 0V, ID = -3mA -0.6 -5 -25 mA 500 VDS = -18V, VGS = 0V VDS = -15V, VGS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA pA -500 -10 -500 -10 rDS(on) V VGS = 0V, ID = -7mA -90 -15 -10 ID(off) VDS = -15V, ID = -1nA -0.8 -30 CONDITIONS IG = 1µA, VDS = 0V 4 -1 -0.5 IDSS UNIT 30 6 -1 -0.7 MAX VDS = -15V, VGS = 7V VDS = -15V, VGS = 5V -500 75 100 VDS = -15V, VGS = 12V 150 Ω VGS = 0V, ID = -1mA • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. 2N5114 2N5115 2N5116 CHARACTERISTIC TYP gfs Forward Transconductance 4.5 mS gos Output Conductance 20 µS rds(on) Ciss MIN MAX Drain to Source On Resistance Input Capacitance MIN MAX MIN MAX 75 100 150 20 25 25 25 5 7 UNIT CONDITIONS VDS = -15V, ID = -1mA f = 1kHz VGS = 0V, ID = 0mA f = 1kHz VDS = -15V, VGS = 0V f = 1MHz VDS = 0V, VGS = 12V f = 1MHz VDS = 0V, VGS = 7V f = 1MHz VDS = 0V, VGS = 5V f = 1MHz VDG = 10V, ID = 10mA f = 1 kHz Ω pF Crss Reverse Transfer Capacitance 6 7 6 en Equivalent Noise Voltage 7 20 nV/√Hz SWITCHING CHARACTERISTICS (max) SYM. td(on) tr td(off) tf CHARACTERISTIC SWITCHING CIRCUIT CHARACTERISTICS 2N5114 2N5115 2N5116 6 10 12 10 20 30 6 8 10 15 30 50 Turn On Time Turn Off Time UNITS 2N5114 2N5115 2N5116 VDD -10V -6V -6V VGG ns TO-18 SYM. 12V 8V RL 430Ω 20V 910Ω 2kΩ RG 100Ω 220Ω 390Ω ID(on) -15mA -7mA -3mA VGS(H) 0V 0V 0V VGS(L) -11V -7V -5V SWITCHING TEST CIRCUIT Three Lead VGG VDD 0.230 DIA. 0.209 0.195 DIA. 0.175 0.030 MAX. 0.150 0.115 VGS(H) VGS(L) 3 LEADS RL 1.2kΩ 0.1µF 0.500 MIN. RG 0.019 DIA. 0.016 51Ω 0.100 0.050 Sampling Scope 2 1 7.5kΩ 1.2kΩ 3 51Ω 51Ω 45° 0.046 0.036 0.048 0.028 NOTES 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio n or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261