J/SST111 SERIES SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) J SERIES SST SERIES TO-92 BOTTOM VIEW SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 135°C D 1 S 2 D S G 3 1 2 3 G TO 92 Maximum Power Dissipation Continuous Power Dissipation (J) 360mW Continuous Power Dissipation (SST) 350mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -35V Gate to Source -35V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP J/SST111 J/SST112 J/SST113 MIN MIN MIN BVGSS Gate to Source Breakdown Voltage -35 VGS(off) Gate to Source Cutoff Voltage -3 VGS(F) Gate to Source Forward Voltage IDSS Drain to Source Saturation Current IGSS Gate Leakage Current IG Gate Operating Current ID(off) Drain Cutoff Current rDS(on) Drain to Source On Resistance Linear Integrated Systems MAX MAX -35 -10 -1 MAX UNIT -35 -5 IG = -1µA, VDS = 0V -3 V 0.7 2 mA VDS = 15V, VGS = 0V -1 5 -1 2 -1 nA VGS = -15V, VDS = 0V pA VDG = 15V, ID = 10mA 1 1 1 nA VDS = 5V, VGS = -10V 30 50 100 Ω IG = 1mA, VDS = 0V -5 0.005 VDS = 5V, ID = 1µA IG = 1mA, VDS = 0V 20 -0.005 CONDITIONS • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP J/SST111 J/SST112 J/SST113 MIN MIN MIN MAX MAX MAX UNIT gfs Forward Transconductance 6 mS gos Output Conductance 25 µS rds(on) Drain to Source On Resistance 30 50 100 Ciss Input Capacitance 7 12 12 12 Crss Reverse Transfer Capacitance 3 5 5 5 Equivalent Noise Voltage 3 en SWITCHING CHARACTERISTICS SYM. td(on) tr td(off) tf CHARACTERISTIC TYP 2 6 Turn Off Time UNIT CONDITIONS VGS = 0V, ID = 0mA f = 1kHz pF VDS = 0V, VGS = -10V f = 1MHz nV/√Hz VDG = 10V, ID = 1mA f = 1 kHz J/SST111 J/SST112 J/SST113 VGS(L) -12V -7V -5V 1600Ω 3200Ω 6mA 3mA 800Ω ID(on) 12mA 15 SWITCHING TEST CIRCUIT SOT-23 0.130 0.155 VDD 0.89 1.03 0.045 0.060 0.170 0.195 Ω SYM. RL VDD = 10V VGS(H) = 0V ns TO-92 0.175 0.195 VDS = 20V, ID = 1mA f = 1kHz SWITCHING CIRCUIT CHARACTERISTICS 2 Turn On Time CONDITIONS LS XXX 0.37 0.51 1 YYWW RL VGS(H) 1.78 2.05 2.80 3.04 3 OUT VGS(L) 2 0.016 0.022 0.014 0.020 0.500 0.610 1kΩ 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 1 2 51Ω 3 0.013 0.100 0.095 0.105 51Ω 0.045 0.055 DIMENSIONS IN INCHES. 0.55 DIMENSIONS IN MILLIMETERS NOTES 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261