LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature IVGS1-2I= 1mV max. -65° to +150°C +150°C Drain to Source Voltage 60V -IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air - Total 3 5 S2 S1 D1 2 G1 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 60V -VGSS -VDSO G1 D1 6 D2 G2 1 S1 S2 7 G2 D2 31 X 32 MILS BOTTOM VIEW 400mW @ +125°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS843 LS844 LS845 UNITS 5 10 25 µV/°C |∆VGS1-2 /∆T| max. Drift vs. Temperature CONDITIONS VDG= 10V ID= 500µA TA= -55°C to +125°C |VGS1-2| max. Offset Voltage SYMBOL BVGSS BVGGO 1 5 15 CHARACTERISTICS Breakdown Voltage MIN. 60 TYP. -- Gate-to-Gate Breakdown 60 -- -- V IG= 1nA ID= 0 IS= 0 -- -- µmho VDG= 15V VGS= 0 f= 1kHz VDG= 15V ID= 500µA VDG= 15V VGS= 0 MAX. -- mV VDG= 10V ID= 500µA UNITS V CONDITIONS VDS= 0 ID= 1nA TRANSCONDUCTANCE Yfss Full Conduction 1500 Yfs Typical Conduction 1000 1500 -- µmho |Yfs1-2/Yfs| Mismatch -- 0.6 3 % DRAIN CURRENT IDSS Full Conduction 1.5 5 15 mA |IDSS1-2/IDSS| Mismatch at Full Conduction -- 1 5 % GATE VOLTAGE VGS(off) or VP Pinchoff Voltage 1 -- 3.5 V VDS= 15V ID= 1nA VGS Operating Range 0.5 -- 3.5 V VDS= 15V ID= 500µA GATE CURRENT -IG Operating -- 15 50 pA VDG= 15V ID= 500µA -IG High Temperature -- -- 50 nA VDG= 15V ID= 500µA -IG Reduced VDG -- 5 30 pA VDG= 3V ID= 500µA -IGSS At Full Conduction -- -- 100 pA VDG= 15V VDS= 0 Linear Integrated Systems TA= +125°C 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 SYMBOL YOSS CHARACTERISTICS OUTPUT CONDUCTANCE Full Conduction YOS |YOS1-2| MIN. TYP. MAX. UNITS CONDITIONS -- -- 20 µmho Operating -- 0.2 2 µmho Differential -- 0.02 0.2 µmho 90 110 -- dB ∆VDS= 10 to 20V ID= 500µA -- 85 -- dB ∆VDS= 5 to 10V ID= 500µA VDS= 15V f= 100Hz VDS= 15V NBW= 1Hz VDS= 15V NBW= 1Hz VGS= 0 RG= 10MΩ NBW= 6Hz ID= 500µA f= 1kHz VDS= 15V ID= 500µA VDG= 15V ID= 500µA VDG= 15V VGS= 0 VDG= 15V ID= 500µA COMMON MODE REJECTION CMR -20 log |∆VGS1-2/∆VDS| CMR NOISE NF Figure -- -- 0.5 dB en Voltage -- -- 7 nV/√Hz en Voltage -- -- 11 nV/√Hz CISS CAPACITANCE Input -- -- 8 pF CRSS Reverse Transfer -- -- 3 pF CDD Drain-to-Drain -- 0.5 -- pF TO-71 P-DIP TO-78 0.320 (8.13) 0.290 (7.37) Six Lead 0.230 DIA. 0.209 0.195 DIA. 0.175 0.030 MAX. 0.150 0.115 6 LEADS 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 0.016 0.019 DIM. A MIN. 0.500 0.016 0.021 DIM. B ID= 500µA f= 10Hz SEATING PLANE 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.200 0.100 0.050 5 6 45° 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 1 8 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261