U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) D Maximum Temperatures 2 3 G D S G Storage Temperature -55 to 150°C Junction Operating Temperature -55 to 135°C S Maximum Power Dissipation SST SERIES Continuous Power Dissipation (J/SST) 350mW Continuous Power Dissipation (U) 500mW SOT-23 TOP VIEW Maximum Currents Gate Current (J/SST) 10mA Gate Current (U) 20mA 1 2 3 1 D 1 S 2 3 G Maximum Voltages Gate to Drain -25V Gate to Source -25V COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -25 VGS(F) Gate to Source Forward Voltage 0.7 IG rDS(on) en MAX 1 UNIT V CONDITIONS IG = -1µA, VDS = 0V IG = 10mA, VDS = 0V Gate Operating Current -15 pA VDG = 9V, ID = 10mA Drain to Source On Resistance 35 Ω VGS = 0V, ID = 1mA Equivalent Noise Voltage NF Noise Figure Gpg Power Gain gfg Forward Transconductance gog TYP 2 Output Conductance Linear Integrated Systems 6 nV/√Hz f = 105MHz 1.5 f = 450MHz 2.7 f = 105MHz 16 f = 450MHz 11.5 f = 105MHz 14 f = 450MHz 13 f = 105MHz 0.16 f = 450MHz 0.55 VDS = 10V, ID = 10mA, f = 100Hz dB VDS = 10V, ID = 10mA mS • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC VGS(off) TYP J/SST308 J/SST309 J/SST310 MIN MAX MIN MIN MAX MAX UNIT CONDITIONS Gate to Source Cutoff Voltage -1 -6.5 -1 -4 -2 -6.5 V VDS = 10V, ID = 1nA IDSS Source to Drain Saturation Current3 12 60 12 30 24 60 mA VDS = 10V, VGS = 0V pF VDS = 10V, VGS = -10V f = 1MHz Ciss Input Capacitance 4 5 5 5 Crss Reverse Transfer Capacitance 1.9 2.5 2.5 2.5 gfs Forward Transconductance 14 gos Output Conductance 110 8 10 8 250 mS 250 250 VDS = 10V, ID = 10mA f = 1kHz µS SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC VGS(off) TYP U308 U309 MIN MAX MIN U310 MAX MIN MAX UNIT CONDITIONS Gate to Source Cutoff Voltage -1 -6.5 -1 -4 -2.5 -6.5 V VDS = 10V, ID = 1nA IDSS Source to Drain Saturation Current3 12 60 12 30 24 60 mA VDS = 10V, VGS = 0V pF VDS = 10V, VGS = -10V f = 1MHz Ciss Input Capacitance 4 5 5 5 Crss Reverse Transfer Capacitance 1.9 2.5 2.5 2.5 gfs Forward Transconductance 14 gos Output Conductance 110 10 10 250 250 mS 250 0.175 0.195 0.230 DIA. 0.209 0.195 DIA. 0.175 0.150 0.115 0.130 0.155 µS 0.89 1.03 0.045 0.060 0.170 0.195 VDS = 10V, ID = 10mA f = 1kHz SOT-23 TO-92 TO-18 Three Lead 0.030 MAX. 10 LS XXX 0.37 0.51 1 1.78 2.05 YYWW 2.80 3.04 3 2 3 LEADS 0.500 MIN. 0.019 DIA. 0.016 0.016 0.022 0.100 0.050 0.014 0.020 0.500 0.610 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 2 1 3 1 45° 0.046 0.036 0.048 0.028 2 0.095 0.105 0.013 0.100 3 0.045 0.055 DIMENSIONS IN INCHES. 0.55 DIMENSIONS IN MILLIMETERS 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Measured at optimum input noise match. 3. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261