LITE-ON SEMICONDUCTOR STPR506D REVERSE VOLTAGE - 600 Volts FORWARD CURRENT- 5.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS TO-220AC FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability Low reverse leakage current High surge capacity Plastic package has UL flammability classification 94V-0 B L M C D A K E PIN 1 2 E F F G MECHANICAL DATA I Case : TO-220AC molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any DIM. A B C D J H N PIN 1 CASE PIN 2 G H TO-220AC MAX. MIN. 14.22 15.88 10.67 9.65 3.43 2.54 6.86 5.84 9.28 8.26 12.70 6.35 14.73 5.33 4.83 0.51 1.14 0.30 0.64 3.53 4.09 L 3.56 4.83 M 1.14 1.40 2.92 2.03 N All Dimensions in millimeter I J K MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL STPR506D UNIT VRRM VRMS VDC 600 420 600 V V I(AV) 5 A IFSM 100 A VF 1.75 V IR 5 500 uA CJ 60 pF Maximum Reverse Recovery Time (Note 2) TRR 25 ns Typical Thermal Resistance (Note 3) R0JC 3.0 C/W -55 to +150 C CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC=100 C Peak Forward Surge Current 8.3ms single half-sine-wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at 5.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =125 C Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range TJ ,TSTG NOTES : 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A. 3. Thermal Resistance Junction to case. V REV. 3, 13-Sep-2001, KTGA02 RATING AND CHARACTERISTIC CURVES STPR506D 4 3 2 1 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 5 150 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 125 100 75 50 25 0 175 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 1000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 100 TJ = 125 C 10 TJ = 75 C 1.0 0.1 TJ = 25 C 0.01 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(uA) 10 NUMBER OF CYCLES AT 60Hz 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS REV. 3, 13-Sep-2001, KTGA02