79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79C0832 is capable of in-system electrical byte and page programmability. It has a 128 x 8 byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0832, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. • • • • • • 256k x 32-bit EEPROM MCM RAD-PAK® radiation-hardened against natural space radiation Total dose hardness: - >100 krad (Si) - Dependent upon orbit Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode High endurance - 10,000 cycles/byte (Page Programming Mode) - 10 year data retention Page Write Mode: 1 to 8 X 128 byte page High Speed: - 150 and 200 ns maximum access times Automatic programming - 10 ms automatic Page/Byte write Low power dissipation - 160 mW/MHz active current - 880 µ W standby current Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K. 01.10.05 Rev 14 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com All data sheets are subject to change without notice 1 ©2005 Maxwell Technologies All rights reserved. Memory FEATURES: 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM Memory TABLE 1. 79C0832 PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 84-77, 29-37 ADDR0 to ADDR16 48-55, 66-73, 96, 1-7, 18-25 I/O0 to I/O31 61 OE 41, 43 CE0-1 45 WE Write Enable 10, 17, 28, 40, 44, 58, 65, 76, 87, 93 5V Power Supply 8, 9, 11-16, 26, 27, 38, 42, 46, 56, 57, 59, 60, 62-64, 74, 75, 85, 86, 88-92, 94, 95 GND 39 RDY/BUSY 47 RES Address Input Data Input/Output Output Enable Chip Enable 0 through 1 Ground Ready/Busy Reset 01.10.05 Rev 14 All data sheets are subject to change without notice 2 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 2. 79C0832 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN TYP MAX UNIT Supply Voltage VCC -0.6 7.0 V Input Voltage VIN -0.51 7.0 V Package Weight RP 45 RT 38 XP TBD Thermal Impedance FJC 3 Operating Temperature Range TOPR -55 125 °C Storage Temperature Range TSTG -65 150 °C Grams ° C/W 1. VIN min = -3.0V for pulse width <50ns. PARAMETER SYMBOL MIN MAX UNIT VCC 4.5 5.5 V VIL VIH VH -0.31 2.2 VCC-0.5 0.8 VCC +0.3 VCC +1 V V V TOPR -55 125 °C Supply Voltage Input Voltage RES_PIN Operating Temperature Range Memory TABLE 3. 79C0832 RECOMMENDED DC OPERATING CONDITIONS 1. VIL min = -1.0V for pulse width < 50 ns TABLE 4. DELTA LIMITS1 PARAMETER VARIATION2 ICC1A +/- 10 % ICC1D +/- 10 % ICC2A +/- 10 % ILI - ADDR, CE, OE, WE +/- 10 % +/- 10 % ILI - D0-D31 1. Parameters are measured and recorded per MIL-STD-883 for Class K devices 2. Specified value in Table 6 01.10.05 Rev 14 All data sheets are subject to change without notice 3 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 5. 79C0832 CAPACITANCE (TA = 25 ° C, f = 1 MHz) PARAMETER SYMBOL Input Capacitance : VIN = 0V1 Output Capacitance: VOUT = 0V1 MIN MAX UNIT CIN OE 6 pF CIN WE 6 CIN CE0-1 6 CIN A0-A16 6 CIN RES 48 COut RDY/BSY 6 CO ut D0-D31 -- pF 12 1. Guaranteed by design. TABLE 6. 79C0832 DC ELECTRICAL CHARACTERISTICS (VCC = 5V ±10%, TA = -55 TO +125°C) TEST CONDITION Input Leakage Current1 VIN = VCC A0-A16, CE,WE, OE Input Leakage Current D0-D31 SYMBOL SUBGROUPS MIN MAX UNITS ILI 1, 2, 3 -- 10 2 µA VIN=VIH 2.22 mA VIN=0V 1.12 mA 4 µA VIN=VCC ILI 1, 2, 3 ILO 1, 2, 3 -- 4 µA CE = ADDR=WE=OE =VCC ICC1A 1, 2, 3 -- 80 µA CE = VIH; ADDR=WE=OE =VCC ICC1B 4 mA CE = ADDR=WE=OE =VIH ICC1C -- 45 mA CE =VIH, ADDR=WE=OE =0V ICC1D -- 25 mA OE = 0V ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 5.5V ICC2A 1, 2, 3 60 mA OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 5.5V ICC2B 1, 2, 3 -- 85 mA OE = 0V ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 150 ns at VCC = 5.5V ICC2C 1, 2, 3 -- 200 mA OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 150 ns at VCC = 5.5V ICC2D 1, 2, 3 225 mA VIL VIH 1, 2, 3 0.8 V Output Leakage Current (VCC = 5.5V, VOUT = 5.5V/0.4V) Standby VCC Current1 Operating VCC Current1,3 Input Voltage VH RES_PIN 01.10.05 Rev 14 Memory PARAMETER 2.2 VCC -0.5 All data sheets are subject to change without notice 4 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 6. 79C0832 DC ELECTRICAL CHARACTERISTICS (VCC = 5V ±10%, TA = -55 TO +125°C) PARAMETER TEST CONDITION SYMBOL SUBGROUPS VOL Data Lines: VCCMin, IOL= 2.1mA 1, 2, 3 RDY/BSY_Line: VCC Min, IOL = 12mA VOL Data Lines: VCC Min, IOH = -400µ A VOH RDY/BSY_Line: VCC Min, IOH = -12mA VOH All Outputs: VCCMin , IOH = -100uA 1. All Inputs are tied to VCC with a 5.5KW resistor, except for RES which is 30KW. Output Voltage MIN MAX UNITS -- 0.4 0.4 ---- V V V V V 2.4 3.15 VCC - 0.3V 2. For RES ILI=800uA max. 3. Only one CE Active (Low) TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 5V ±10%, TA = -55 TO +125°C) PARAMETER SUBGROUPS Address Access Time CE = OE = VIL, WE = VIH -150 -200 tACC 9, 10, 11 Chip Enable Access Time OE = VIL, WE = VIH -150 -200 tCE Output Enable Access TIme CE = VIL, WE = VIH -150 -200 tOE Output Hold to Address Change CE = OE =VIL, WE = VIH -150 -200 tOH Output Disable to High-Z 2 CE = VIL, WE = VIH -150 -200 CE = OE = VIL, WE = VIH -150 -200 RES to Output Delay CE = OE = VIL, WE = VIH3 -150 -200 MIN MAX --- 150 200 --- 150 200 0 0 75 125 0 0 --- 0 0 50 60 0 0 350 450 0 0 450 650 UNIT ns 9, 10, 11 Memory SYMBOL ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns tDF ns tDFR TRR 9, 10, 11 ns 1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing = 0.8 V/1.8 V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. 01.10.05 Rev 14 All data sheets are subject to change without notice 5 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION (VCC = 5V ±10%, TA = -55 TO +125°C) SYMBOL SUBGROUPS Address Setup Time -150 -200 tAS 9, 10, 11 Chip Enable to Write Setup Time (WE controlled) -150 -200 tCS PARAMETER Write Pulse Width CE controlled -150 -200 WE controlled -150 -200 MIN 1 MAX 0 0 --- 0 0 --- 250 350 --- 250 350 --- 150 200 --- 100 150 --- 10 10 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- --- 10 10 UNITS ns 9, 10, 11 ns 9, 10, 11 ns tCW ns tWP tAH Data Setup Time -150 -200 tDS Data Hold Time -150 -200 tDH Chip Enable Hold Time (WE controlled) -150 -200 tCH Write Enable to Write Setup Time (CE controlled) -150 -200 tWS Write Enable Hold Time (CE controlled) -150 -200 tWH Output Enable to Write Setup Time -150 -200 tOES Output Enable Hold Time -150 -200 tOEH Write Cycle Time 2 -150 -200 tWC 01.10.05 Rev 14 9, 10, 11 ns 9, 10, 11 Memory Address Hold Time -150 -200 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ms All data sheets are subject to change without notice 6 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION (VCC = 5V ±10%, TA = -55 TO +125°C) SYMBOL SUBGROUPS Data Latch Time -150 -200 tDL 9, 10, 11 Byte Load Window -150 -200 tBL Byte Load Cycle -150 -200 tBLC Time to Device Busy -150 -200 tDB Write Start Time 3 -150 -200 tDW RES to Write Setup Time4 -150 -200 tRP VCC to RES Setup Time4 -150 -200 tRES PARAMETER MIN 1 MAX 300 400 --- 100 200 --- .55 .95 30 30 120 170 --- 150 250 --- 100 200 --- 1 3 --- UNITS ns 9, 10, 11 µs 9, 10, 11 µs 9, 10, 11 ns 9, 10, 11 ns Memory 9, 10, 11 µs 9, 10, 11 µs 1. Use this device in a longer cycle than this value. 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. TABLE 9. 79C0832 MODE SELECTION 1 CE 2 OE WE I/O RES RDY/BUSY Read VIL VIL VIH DOUT VH VOH Standby VIH X X High-Z X VOH Write VIL VIH VIL DIN VH VOH --> VOL Deselect VIL VIH VIH High-Z VH VOH Write Inhibit X X VIH -- X -- X VIL X -- X -- VIL VIL VIH Data Out (I/O7) VH VOL Program Reset X X 1. Refer to the recommended DC operating conditions. X High-Z VL VOH PARAMETER Data Polling 2. For CE0-1 only one CE can be used (“on”) at a time. 01.10.05 Rev 14 All data sheets are subject to change without notice 7 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM FIGURE 1. READ TIMING WAVEFORM Memory FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 01.10.05 Rev 14 All data sheets are subject to change without notice 8 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation. 01.10.05 Rev 14 All data sheets are subject to change without notice 9 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) 1 Memory 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation. FIGURE 6. DATA POLLING TIMING WAVEFORM 01.10.05 Rev 14 All data sheets are subject to change without notice 10 ©2005 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 79C0832 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE) Memory EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data integrity. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading the first byte of data, the data load window opens 30µ s for the second byte. In the same manner each additional byte of data can be loaded within 30µ s of the preceding falling edge of either WE or CE. When CE and WE are kept high for 100µ s after data input, the EEPROM enters the write mode automatically and the data input is written into the EEPROM. WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. 01.10.05 Rev 14 All data sheets are subject to change without notice 11 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( VOH). RES Signal When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations. Memory Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control pins. 01.10.05 Rev 14 All data sheets are subject to change without notice 12 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM 2. Data Protection at VCC on/off When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. 3. RES Signal RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data is input . Memory 10ms 4. Software Data Protection Enable The 79C0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to the device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the EEPROM and allowing the write cycle period (tWC) of 10ms to elapse: . Software Data Protection Enable Sequence Address Data 5555 AAAA or 2AAA AA AA AA AA 55 55 55 55 5555 A0 A0 A0 A0 01.10.05 Rev 14 All data sheets are subject to change without notice 13 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM 5. Writing to the Memory with Software Data Protection Enabled To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This sequence allows the write to occur while at the same time keeping the software protection enabled Sequence for Writing Data with Software Protection Enabled. Address Data 5555 AAAA or 2AAA AA AA AA AA 55 55 55 55 5555 A0 A0 A0 A0 Write Address(s) Normal Data Input Memory 6. Disabling Software Protection Software data protection mode can be disabled by inputting the following 6 bytes sequence. Once the software protection sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed. Software Protection Disable Sequence Address Data 5555 AA AA AA AA AAAA or 2AAA 55 55 55 55 5555 80 80 80 80 5555 AA AA AA AA AAAA or 2AAA 55 55 55 55 5555 20 20 20 20 Devices are shipped in the “unprotected” state, meaning that the contents of the memory can be changed as required by the user. After the software data protection is enabled, the device enters the Protect Mode where no further write commands have any effect on the memory contents. 01.10.05 Rev 14 All data sheets are subject to change without notice 14 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM Memory 96-PIN RAD-PAK® QUAD FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A .184 .200 .216 b .010 .012 .013 c --- .009 .012 D 1.408 1.420 1.432 D1 1.162 e .050 S1 .129 L --- 2.528 2.543 L1 2.485 2.500 2.505 L2 --- 1.700 A1 .152 .165 N .178 96 Note: All dimensions in inches 01.10.05 Rev 14 All data sheets are subject to change without notice 15 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM A1 Pin #1 ID c S1 MAXWELL e TECHNOLOGIES L2 b Memory D1 D(sq) L1(sq) A L(sq) 96 PIN RAD-TOLERANT QUAD FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A .167 .183 .199 b .010 .012 .013 c -- .009 .012 D 1.408 1.420 1.432 D1 1.162 e .050 S1 .129 L -- 2.528 2.543 L1 2.485 2.500 2.505 L2 A1 1.700 .152 .165 N .178 96 Note: All dimensions in inches 01.10.05 Rev 14 All data sheets are subject to change without notice 16 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM Memory 96 PIN XRAYL QUAD FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A .200 .222 .245 b .007 .010 .013 c .009 .009 .013 D 1.690 1.707 1.725 D1 1.150 e 0.050 S1 .278 L 3.000 3.020 3.040 L1 2.985 3.000 3.005 L2 2.090 2.200 2.210 A1 .115 .130 .145 N 96 Note: All dimensions in inches 01.10.05 Rev 14 All data sheets are subject to change without notice 17 ©2005 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 79C0832 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 01.10.05 Rev 14 All data sheets are subject to change without notice 18 ©2005 Maxwell Technologies All rights reserved 79C0832 8 Megabit (256K x 32-Bit) EEPROM MCM Product Ordering Options Model Number 79C0832 XX Q X -XX Option Details Feature 15 = 150 ns 20 = 200 ns Screening Flow Multi Chip Module (MCM)1 K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Package Q = Quad Flat Pack Radiation Feature RP = RAD-PAK® package XP = Xray-PakL Package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at Base Product Nomenclature 8 Megabit (256K x 32-Bit) EEPROM MCM 1) Products are manufactureded and screened to Maxwell Technologies self-defined Class H and Class K flows. 01.10.05 Rev 14 All data sheets are subject to change without notice 19 ©2005 Maxwell Technologies All rights reserved Memory Access Time