61048 Mii SILICON PHOTOTRANSISTOR (TYPE GS4123) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • Hermetically sealed High Sensitivity Base lead provided for conventional transistor biasing Wide receiving angle for easy alignment Spectrally Matched to the 62030 Series LED. Incremental Encoding Reflective Sensors Position Sensors Level Sensors DESCRIPTION This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large (0.06” X 0.06”) sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Storage Temperature..........................................................................................................................................-65°C to +150°C Operating Temperature (See part selection guide for actual operating temperature)...................................... -65°C to +125°C Collector-Emitter Voltage........................................................................................................................................................ 50V Emitter-Collector Voltage.......................................................................................................................................................... 7V Continuous Collector Current ..............................................................................................................................................50mA Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C Package Dimensions Schematic Diagram 0.210 [5.33] 0.170 [4.32] 0.030 [0.76] MAX 0.019 Ø[0.48] 0.016 Ø[0.41] 0.230Ø [5.84] 0.209Ø [5.31] C 3 LEADS COLLECTOR Ø0.100 [Ø2.54] 3 0.195Ø [4.95] 0.178Ø [4.52] 2 0.048 [1.22] 0.028 [0.71] 1 0.500 [12.70] MIN BASE 0.046 [1.17] 0.036 [0.91] EMITTER 45° ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 6-4 E B 61048 SILICON PHOTOTRANSISTOR (GS4123) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN TYP MAX Light Current 5 20 30 50 IL Dark Current UNITS TEST CONDITIONS NOTE mA VCE = 5.0V, H = 20 mW/cm2 1 20 30 50 -- nA VCE = 5V, H = 0 Collector-Emitter Breakdown Voltage BVCEO ID 30 50 V IC = 100µA Emitter-Collector Breakdown Voltage BVECO 7 V IE = 100µA µs RL = 100Ω, VCC = 5V, IL = 1.0mA V IC = 0.4mA, H = 20 mW/cm2 Light Current Rise Time 8 10 15 20 tr Saturation Voltage VCE (sat) 0.2 θ Angular Response 10 NOTES: 1. Irradiance in mW/cm2 from tungsten source at a color temperature of 2870K. 2. The angle between incidence for peak response and incidence for 50% of peak response. degrees 2 RELATIVE SPECTRAL RESPONSE ANGULAR RESPONSE 100 100 PULSE RESPONSE TEST CIRCUIT AND WAVEFORM Vcc 90% DUT H BASE OPEN 10% IL RL RELATIVE RE SPONSE [% ] RELATIVE RESPONSE [%] 90 80 70 60 50 40 30 20 80 60 40 20 10 OUTPUT tf tr 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 -50 1.2 -40 -30 -20 -10 DARK CURRENT versus TEMPERATURE 10 20 30 COLLECTOR EMITTER CHARACTERISTICS 10 IC COLLECTOR CURRENT [mA] 10 VCC =30 V M=0 1.0 0.1 0.01 0.001 I CEO. COLLECTOR DARK CURRENT [uA] 0 ANGLE [DEGREES] WAVELENGTH [um] 0.0001 SOURCE TEMP - 2870 TUNGSTEN SOURCE TA = 25°C 8.0 0 mW H=1 6.0 H = 50 4.0 2.0 H = 20 H = 10 0 0.00001 -50 -25 0 25 50 75 100 125 0 TA - AMBIENT TEMPERATURE - °C 5 10 15 20 25 30 35 VCE COLLECTOR-EMITTER VOLTAGE [VOLTS] RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX Bias Voltage-Collector/Emitter IF 5 10 UNITS mA Irradiance (H) H 15 25 mW/cm2 SELECTION GUIDE PART NUMBER 61048-001 61048-101 61048-002 61048-102 61048-003 61048-103 61048-004 61048-104 PART DESCRIPTION Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening IL Range 5 to 20mA 5 to 20mA 20 to 30mA 20 to 30mA 30 to 50mA 30 to 50mA +50mA +50mA MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 6-5 40 50