61058 Mii SILICON PHOTOTRANSISTOR (TYPE GS4021) OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • Hermetically sealed High sensitivity Base lead provided for conventional transistor biasing Narrow viewing angle Spectrally matched to the 62033 series LED. Incremental encoding Reflective sensors Position sensors Level sensors DESCRIPTION The 61058 is an N-P-N Planar Silicon phototransistor in a lensed TO-46 three-lead package. It is available in a range of sensitivities and is ideal for use wherever high response, low dark current leakage, and low saturation characteristics are required. Available custom binned to customer specifications or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Storage Temperature..........................................................................................................................................-65°C to +150°C Operating Temperature (See part selection guide for actual operating temperature) ......................................-65°C to +125°C Collector-Emitter Voltage........................................................................................................................................................ 50V Emitter-Collector Voltage.......................................................................................................................................................... 7V Continuous Collector Current ..............................................................................................................................................50mA Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C Package Dimensions Schematic Diagram 0.210 [5.33] 0.170 [4.32] 0.030 [0.76] MAX 0.019 Ø[0.48] 0.016 Ø[0.41] 3 LEADS COLLECTOR Ø0.100 [Ø2.54] 3 0.230Ø [5.84] 0.209Ø [5.31] 2 0.195Ø [4.95] 0.178Ø [4.52] 0.048 [1.22] 0.028 [0.71] 1 BASE 0.500 [12.70] MIN ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] 0.046 [1.17] 0.036 [0.91] EMITTER 45° THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 6 - 14 61058 SILICON PHOTOTRANSISTOR (TYPE GS4021) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Light Current 61058-X01 61058-X02 61058-X03 61058-X04 MIN TYP MAX 1 4 8 15 IL UNITS TEST CONDITIONS mA VCE = 5.0V, H = 5 mW/cm 5 9 16 -- 2 Dark Current 61058-XXX ID nA VCE = 10V, H = 0 Collector-Emitter Breakdown Voltage 61058-XXX BVCEO 30 V IC = 100µA Emitter-Collector Breakdown Voltage 61058-XXX BVECO 7 V IE = 100µA Light Current Rise Time 61058-X01 61058-X02 61058-X03 61058-X04 µs RL = 1KΩ, VCC = 5V, IL = 1.0mA V IC = 0.4mA, H = 5 mW/cm2 Saturation Voltage 100 3.0 4.0 5.0 7.0 tr 61058-XXX VCE (sat) 0.2 Angular Response 61058-XXX 10 θ NOTES: 2 1. Irradiance in mW/cm from a tungsten source at a color temperature of 2870K.. 2. The angle between incidence for peak response and incidence for 50% of peak response. 2 90% DUT H 10% IL RL RELATIVE SPECTRAL RESPONSE 100 100 90 RELATIVE RESPONSE [%] R E L A T IV E R E S P O N S E [% PULSE RESPONSE TEST CIRCUIT AND WAVEFORM 80 60 40 20 80 70 60 50 40 30 20 10 OUTPUT tf tr 0 -4 0 -3 0 -2 0 -1 0 0 10 20 0 0.2 40 30 0.3 0.4 0.5 A N G L E [D E G R E E S ] 8 .0 H =1 0 /c mW 6 .0 1.8 3 .0 2 .0 2 .0 1 .0 0 .5 0 5 0.8 0.9 1.0 RL =100 Vcc = 5.0 V NOTE 1 1.6 5 .0 4 .0 0.7 NORMALIZED LIGHT CURRENT versus TEMPERATURE 2.0 C O LO R TEM P = 2870 k TUNGSTEN SOURCE m2 I L [NORMALIZED] IC C O L L E C T O R C U R R E N T [m A ] 10 0.6 WAVELENGTH [um] COLLECTOR-EMITTER CHARACTERISTICS 0 1 degrees ANGULAR RESPONSE Vcc NOTE 1.2 1.0 0.8 0.6 0.4 15 10 1.4 20 0.2 25 0 -100 VC E C O L L E C T O R -E M IT T E R V O L T A G E [V O L T S ] -75 -50 -25 0 25 50 75 100 125 150 TA AMBIENT TEMPERATURE [°C] RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX Bias Voltage-Collector/Emitter IF 5 10 UNITS mA Irradiance (H) H 15 25 mW/cm2 SELECTION GUIDE PART NUMBER 61058-001 61058-101 61058-002 61058-102 61058-003 61058-103 61058-004 61058-104 PART DESCRIPTION Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening Silicon Phototransistor in TO-46 package, commercial version Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening IL Range 1 to 5mA 1 to 5mA 4 to 9mA 4 to 9mA 8 to 16mA 8 to 16mA 15+ mA 15+ mA MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 6 - 15 1.1 1.2