66168 Mii PROTON RADIATION TOLERANT OPTOCOUPLER (Pin-for-Pin Replacement for 4N49) OPTOELECTRONIC PRODUCTS DIVISION Rev. A 4/25/00 Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature +1000V electrical isolation Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION The 66168 is a modified 4N49 (LED) designed to be more tolerant to proton radiation. The 66168 optocoupler is packaged in a hermetically sealed TO-5. This device can be supplied to customer specifications as well as tested in accordance with MIL-PRF-19500/548 (4N49) to JAN, JANTX, JANTXV and JANS levels. ABSOLUTE MAXIMUM RATINGS Input to Output Voltage......................................................................................................................................................... +1kV Emitter-Base Voltage................................................................................................................................................................ 7V Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) .......................... 40V Collector-Base Voltage ........................................................................................................................................................... 45V Reverse Input Voltage ............................................................................................................................................................. 2V Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................40mA Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ............................................................................. 1A Continuous Collector Current ..............................................................................................................................................50mA Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW Storage Temperature..........................................................................................................................................-65°C to +125°C Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C Lead Solder Temperature (10 seconds max.) ................................................................................................................... 240°C Notes: 1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C. 2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C. Package Dimensions Schematic Diagram 6 LEADS 0 .0 1 6 Ø [0 .4 1 ] 0 .0 1 9 Ø [0 .4 8 ] 5 A 0 .0 4 0 [1 .0 2 ] M AX. 0 .3 0 5 [7 .7 5 ] 0 .3 3 5 [8 .5 1 ] 5 0 .0 2 2 Ø [5 .0 8 ] 3 0 .0 4 5 [1 .1 4 ] 0 .0 2 9 [0 .7 3 ] 6 7 2 1 0 .5 0 0 [1 2 .7 0 ] M IN . 0 .1 5 5 [3 .9 4 ] 0 .1 8 5 [4 .7 0 ] C 3 E 1 B 2 45° 7 K 0 .0 3 4 [0 .8 6 4 ] 0 .0 2 8 [0 .7 1 1 ] N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S ( M IL L IM E T E R S ) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 3 - 16 66168 PROTON RADIATION TOLERANT OPTOCOUPLER (Pin-for-Pin Replacement for 4N49) Rev. A 4/25/00 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current MIN TYP IR Input Diode Static Forward Voltage -55°C VF 1.0 Input Diode Static Forward Voltage +25°C VF 0.8 Input Diode Static Forward Voltage +100°C VF 0.7 1.7 MAX UNITS TEST CONDITIONS 100 µA VR = 2V 2.4 V IF = 10mA 2.0 V IF = 10mA 1.8 V IF = 10mA MAX NOTE OUTPUT TRANSISTOR TA = 25°C unless otherwise specified. SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage PARAMETER V(BR)CBO 45 V IC = 100µA, IB = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1mA, IB = 0, IF = 0 Emitter-Base Breakdown Voltage V(BR)EBO 7 Off-State Collector Current +100°C TYP V IC = 0mA, IE = 100µA, IF = 0 IC(OFF) 100 nA VCE = 20V, IF = 0mA, IB = O IC(OFF) 100 µA VCE = 20V, IF = 0mA, IB = O MAX NOTE COUPLED CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN UNITS TEST CONDITIONS IC(ON) 2.0 mA VCE = 5V, IF = 1mA IC(ON) 0.5 mA VCE = 0.4V, IF = 2mA IC(ON) 0.7 On State Collector Current On State Collector Current +100°C ° On State Collector Current -55 C TYP NOTE mA VCE = 5V, IF = 2mA 0.3 V IF = 2mA, IC = 2mA, IB = 0 Ω VIN-OUT = 500V 1 2.5 5 pF f = 1MHz, VIN-OUT = 1kV 1 tr 10 25 µs VCC = 10V, IF = 5mA, tf 10 25 µs VCC = 10V, IF = 5mA, Collector-Emitter Saturation Voltage VCE(SAT) Input to Output Internal Resistance RIO Input to Output Capacitance CIO Rise Time-Phototransistor Operation Fall Time-Phototransistor Operation 11 10 RL = 100Ω, IB = 0 RL = 100Ω, IB = 0 Rise Time-Photodiode Operation tr 0.85 µs 3 VCC = 10V, IF = 5mA, RL = 100Ω, IE = 0 Fall Time-Photodiode Operation tf 0.85 µs 3 VCC = 10V, IF = 5mA, RL = 100Ω, IE = 0 NOTES: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together. 2. This parameter must be measured using pulse techniques (tW = 100µs duty cycle < 1%). RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX UNITS Input Current, Low Level IFL 0 90 µA Input Current, High Level IFH 2 10 mA Supply Voltage VCE 5 10 Operating Temperature TA -55 100 V ° C SELECTION GUIDE PART NUMBER 66168-001 66168-101 66168-103 66168-105 66168-300 2 PART DESCRIPTION Single Channel Commercial Proton Radiation Tolerant (4N49) Optocoupler (0° to 70°C) Single Channel Proton Radiation Tolerant (4N49) Screened to JAN level Single Channel Proton Radiation Tolerant (4N49) Screened to JANTX level Single Channel Proton Radiation Tolerant (4N49) Screened to JANTXV level Single Channel Proton Radiation Tolerant (4N49) Screened to JANS level MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 3 - 17