V82658B04S 64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 MOSEL VITELIC PRELIMINARY Features Description ■ JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module (SODIMM); 8,388,608 x 64 bit organization. ■ Utilizes High Performance 8M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V (± 0.2V) Power Supply ■ Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) ■ Auto Refresh (CBR) and Self Refresh ■ All Inputs, Outputs are SSTL-2 Compatible ■ 4096 Refresh Cycles every 64 ms ■ Serial Presence Detect (SPD) ■ DDR SDRAM Performance The V82658B04S memory module is organized 8,388,608 x 64 bits in a 200 pin memory module. The 8M x 64 memory module uses 4 Mosel-Vitelic 8M x 16 DDR SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required. Component Used tCK tAC Clock Frequency (max.) Clock Access Time CAS Latency = 2.5 -7 -75 -8 Units 143 133 125 MHz (PC266A) (PC266B) (PC200) 7 7.5 8 ns Module Speed A1 PC1600 (100MHz @ CL2) B0 PC2100B (133MHz @ CL2.5) B1 PC2100A (133MHz @ CL2) V82658B04S Rev. 1.2 March 2002 1 V82658B04S MOSEL VITELIC Part Number Information V 8 2 65 8 B 0 4 S DDRSDRAM 2.5V T G - XX COMPONENT PACKAGE, T = TSOP WIDTH DEPTH COMPONENT REV LEVEL 200 PIN Unbuffered SODIMM X16 COMPONENT STTL REFRESH RATE 4K V82658B04S Rev. 1.2 March 2002 X SPEED A1 (100MHZ@CL2) B0 ([email protected]) B1 (133MHZ@CL2) LEAD FINISH G = GOLD MOSEL VITELIC MANUFACTURED 2 4 BANKS V82658B04S MOSEL VITELIC Block Diagram S0 DQS0 DM0 LDQS LDM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 LDQS LDM DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS4 DM4 S LDQS LDM DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 D0 DQS5 DM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DM6 S I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 LDQS LDM DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 D1 DQS7 DM7 DQ56 DQ57 DQ58 DQ58 DQ60 DQ61 DQ62 DQ63 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 S D2 S D3 *Clock Net Wiring Dram1 BA0 - BA1 BA0-BA1: DDR SDRAMs D0 - D3 A0 - A13 A0-A13: DDR SDRAMs D0 - D3 RAS RAS: SDRAMs D0 - D3 CAS CAS: SDRAMs D0 - D3 CKE0 CKE: SDRAMs D0 - D3 WE WE: SDRAMs D0 - D3 VDDSPD VDD/VDDQ Clock Input CK0/CK0 CK1/CK1 CK2/CK2 Card Edge SDRAMs 2 SDRAMs 2 SDRAMs NC Dram3 Cap SPD D0 - D3 Serial PD VREF D0 - D3 SCL VSS D0 - D3 WP V82658B04S Rev. 1.2 March 2002 Cap CK CK Clock Wiring D0 - D3 VDDID R=120Ω ± 5% Strap: see Note 4 SDA A0 A1 A2 SA0 SA1 SA2 3 Notes: 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms. 4. VDDID strap connections (for memory device VDD, VDDQ): STRAP OUT (OPEN): VDD = VDDQ STRAP IN (VSS): VDD ≠ VDDQ. V82658B04S MOSEL VITELIC Pin Configurations (Front Side/Back Side) Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 VREF VSS DQ0 DQ1 VDD DQS0 DQ2 VSS DQ3 DQ8 VDD DQ9 DQS1 VSS DQ10 DQ11 VDD CK0 CK0 VSS 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 DQ27 VDD CB0 CB1 VSS DQS8 CB2 VDD CB3 DU VSS CK2 CK2 VDD CKE1 DU(A13) A12 A9 VSS A7 A5 A3 A1 VDD A10/AP BA0 WE S0 DU VSS DQ32 DQ33 VDD DQS4 135 137 139 141 143 145 147 149 151 153 155 157 159 161 163 165 167 169 171 173 175 177 179 181 183 185 187 189 191 193 195 197 199 DQ34 VSS DQ35 DQ40 VDD DQ41 DQS5 VSS DQ42 DQ43 VDD VDD VSS VSS DQ48 DQ49 VDD DQS6 DQ50 VSS DQ51 DQ56 VDD DQ57 DQS7 DQ58 DQ58 DQ59 VDD SDA SCL VDDSPD VDDID 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 VREF VSS DQ4 DQ5 VDD DM0 DQ6 VSS DQ7 DQ12 VDD DQ13 DM1 VSS DQ14 DQ15 VDD VDD VSS VSS 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 DQ31 VDD CB4 CB5 VSS DM8 CB6 VDD CB7 DU/(RESET) VSS VSS VDD VDD CKE0 DU(BA2) A11 A8 VSS A6 A4 A2 A0 VDD BA1 RAS CAS S1 DU VSS DQ36 DQ37 VDD DM4 136 138 140 142 144 146 148 150 152 154 156 158 160 162 164 166 168 170 172 174 176 178 180 182 184 186 188 190 192 194 196 198 200 DQ38 VSS DQ39 DQ44 VDD DQ45 DM5 VSS DQ46 DQ47 VDD CK1 CK1 VSS DQ52 DQ53 VDD DM6 DQ54 VSS DQ55 DQ60 VDD DQ61 DM7 VSS DQ62 DQ63 VDD SA0 SA1 SA2 DU Key 41 43 45 47 49 51 53 55 57 59 61 63 65 DQ16 DQ17 VDD DQS2 DQ18 VSS DQ19 DQ24 VDD DQ25 DQS3 VSS DQ26 Key 42 44 46 48 50 52 54 56 58 60 62 64 66 DQ20 DQ21 VDD DM2 DQ22 VSS DQ23 DQ28 VDD DQ29 DM3 VSS DQ30 Notes: * These pins are not used in this module. Pin Names Pin Pin Description Pin Pin Description A0~A11 Address Input (Multiplexed) VDD Power Supply (2.5V) BA0~BA1 Bank Select Address VDDQ Power Supply for DQS(2.5V) DQ0~DQ63 Data Input/Output VSS Ground DQS0~DQS7 Data Strobe Input/Output VREF Power Supply for Reference CK0~CK2, CK0~CK2, Clock Input VDDSPD CKE0 Clock Enable Input Serial EEPOM Power Supply (2.3V to 3.6V) CS0 Chip Select Input SDA Serial Data I/O RAS Row Address Strobe SCL Serial Clock CAS Column Address Strobe SA0~2 Address in EEPROM WE Write Enable VDDID VDD Identification Flag DM0~DM7 Data - In Mask NC No Connection V82658B04S Rev. 1.2 March 2002 4 V82658B04S MOSEL VITELIC Serial Presence Detect Information Bin Sort: A1 (PC1600 @ CL2) B0 (PC2100B @ CL2.5) B1 (PC2100A @ CL2) Function Supported Byte # Function described 0 Defines # of Bytes written into serial memory at module manufacturer 128bytes 80h 1 Total # of Bytes of SPD memory device 256bytes 08h 2 Fundamental memory type SDRAM DDR 07h 3 # of row address on this assembly 12 0Ch 4 # of column address on this assembly 9 09h 5 # of module Rows on this assembly 1Bank 01h 6 Data width of this assembly 64 bits 40h 7 Data width of this assembly - 00h 8 VDDQ and interface standard of this assembly SSTL 2.5V 04h 9 DDR SDRAM cycle time at CAS Latency =2.5 10 DDR SDRAM Access time from clock at CL=2.5 11 DIMM configuration type(Non-parity, Parity, ECC) 12 Refresh rate & type 13 A1 B0 8ns 7.5ns B1 Hex value 7ns ±0.8ns ±0.75ns ±0.70ns A1 B0 B1 80h 75h 70h 80h 75h 70h Non-parity, ECC 00 15.6us & Self refresh 80h Primary DDR SDRAM width x16 10h 14 Error checking DDR SDRAM data width x0 00h 15 Minimum clock delay for back-to-back random column address tCCD =1CLK 01h 16 DDR SDRAM device attributes : Burst lengths supported 2,4,8 0Eh 17 DDR SDRAM device attributes : # of banks on each DDR SDRAM 4 banks 04h 18 DDR SDRAM device attributes : CAS Latency supported 2,2.5 0Ch 19 DDR SDRAM device attributes : CS Latency 0CLK 01h 20 DDR SDRAM device attributes : WE Latency 1CLK 02h 21 DDR SDRAM module attributes Unbuffered Diff Clock 20h 22 DDR SDRAM device attributes : General +/-0.2V voltage tolerance 00h 23 DDR SDRAM cycle time at CL =2 24 DDR SDRAM Access time from clock at CL =2 25 DDR SDRAM cycle time at CL =1.5 - - - 00h 26 DDR SDRAM Access time from clock at CL =1.5 - - - 00h 27 Minimum row precharge time (=tRP) 20ns 20ns 18ns 50h 50h 48h 28 Minimum row activate to row active delay(=tRRD) 15ns 15ns 14ns 3Ch 3Ch 38h V82658B04S Rev. 1.2 March 2002 10ns ±0.8ns 5 10ns 7.5ns ±0.8ns ±0.75ns A0h A0h 75h 80h 80h 75h V82658B04S MOSEL VITELIC Serial Presence Detect Information (cont.) Function Supported Byte # Function described Hex value A1 B0 B1 A1 B0 B1 29 Minimum RAS to CAS delay(=tRCD ) 20ns 20ns 18ns 50h 50h 48h 30 Minimum active to precharge time(=tRAS) 50ns 45ns 45ns 32h 2Dh 2Dh 31 Module ROW density 32 Command and address signal input setup time 1.1ns 0.9ns 0.9ns B0h 90h 90h 33 Command and address signal input hold time 1.1ns 0.9ns 0.9ns B0h 90h 90h 34 Data signal input setup time 0.6ns 0.5ns 0.5ns 60h 50h 50h 35 Data signal input hold time 0.6ns 0.5ns 0.5ns 60h 50h 50h 36-40 64MB Superset information (may be used in future) 10h - 00h 41 SDRAM device minimum active to active/auto-refresh time (=tRC ) 70ns 65ns 60ns 46h 41h 3Ch 42 SDRAM device minimum active to autorefresh to active/auto-refresh time (=tRFC) 80ns 75ns 67ns 50h 4Bh 43h 43 SDRAM device maximum device cycle time (=tCK MAX) 12ns 12ns 12ns 30h 30h 30h 44 SDRAM device maximum skew between DQS and DQ signals (=tDQSQ) 0.6ns 0.5ns 0.5ns 3Ch 32h 32h 45 SDRAM device maximum read datahold skew factor (=tQHS) 1ns 0.75ns 0.75ns A0h 75h 75h 46-61 Superset information (may be used in future) - 00h Initial release 00h 62 SPD data revision code 63 Checksum for Bytes 0 ~ 62 64 Manufacturer JEDEC ID code Mosel Vitelic 40h ....... Manufacturer JEDEC ID code Mosel Vitelic 00h 65 -71 72 73-90 - Manufacturing location BBh 01h 01h Module part number (ASCII) V82658B04S 91 Manufacturer revison code (For PCB) 0 00 92 Manufacturer revison code (For component) 0 00 93 Manufacturing date (Week) - - 94 Manufacturing date (Year) - - Assembly serial # - - 99~127 Manufacturer specific data (may be used in future) Undefined 00h 128~255 Open for customer use Undefined 00h 95~98 V82658B04S Rev. 1.2 March 2002 6 A0h V82658B04S MOSEL VITELIC DC Operating Conditions (TA = 0 to 70°C, Voltage referenced to VSS = 0V) Parameter Symbol Min Typ. Max Unit Power Supply Voltage VDD 2.3 2.5 2.7 V Power Supply Voltage VDDQ 2.3 2.5 2.7 V Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V Input Low Voltage VIL -0.3 - VREF - 0.15 V I/O Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V VREF 1.15 1.25 1.35 V II -2 - 2 µA Output Leakage Current IOz -5 - 5 µA Output High Current (VOUT = 1.95V) IOH -16.8 - - mA Output Low Current (VOUT = 0.35V) IOL 16.8 - - mA Reference Voltage Input Leakage Current Note 1 2 3 Notes: 1. VDDQ must not exceed the level of VDD . 2. VIL (min) is acceptable -1.5V AC pulse width with ð 5ns of duration. 3. The value of VREF is approximately equal to 0.5VDDQ. AC Operating Conditions (TA = 0 to 70 °C, Voltage referenced to VSS = 0V) Parameter Symbol Min Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) Input Differential Voltage, CK and CK inputs VID(AC) Input Crossing Point Voltage, CK and CK inputs VIX(AC) Max Unit Note V VREF - 0.31 V 0.7 VDDQ + 0.6 V 1 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Notes: 1. VID is the magnitude of the difference between the input level on CK and the input on CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. V82658B04S Rev. 1.2 March 2002 7 V82658B04S MOSEL VITELIC AC Operating Test Conditions (TA = 0 to 70°C, Voltage referenced to VSS = 0V) Parameter Value Unit Reference Voltage VDDQ x 0.5 V Termination Voltage VDDQ x 0.5 V AC Input High Level Voltage (VIH, min) VREF + 0.31 V AC Input Low Level Voltage (VIL, max) VREF - 0.31 V VREF V Output Timing Measurement Reference Level Voltage VTT V Input Signal maximum peak swing 1.5 V Input minimum Signal Slew Rate 1 V/ns Termination Resistor (RT) 50 ¾ Series Resistor (R S) 25 ¾ Output Load Capacitance for Access Time Measurement (C L) 30 pF Input Timing Measurement Reference Level Voltage Vtt=0.5*VDDQ RT=50Ω Output Z0=50Ω CLOAD=30pF VREF =0.5*V DDQ Output Load Circuit (SSTL_2) Input/Output Capacitance (VDD = 2.5V, VDDQ = 2.5V, TA = 25°C, f = 1MHz) Parameter Symbol Min Max Unit Input capacitance (A0 ~ A11, BA0 ~ BA1, RAS, CAS, WE) CIN1 36 45 pF Input capacitance (CKE0) CIN2 36 45 pF Input capacitance (CS0) CIN3 34 42 pF Input capacitance (CLK1, CLK2) CIN4 34 38 pF Data & DQS input/output capacitance (DQ 0~DQ63) COUT 8 9 pF Input capacitance (DM0~DM8) CIN5 8 9 pF V82658B04S Rev. 1.2 March 2002 8 V82658B04S MOSEL VITELIC DDR SDRAM IDD SPEC TABLE B1(DDR266@CL=2) B0(DDR266@CL=2.5) A1(DDR200@CL=2) Typical Worst Typical Worst Typical Worst IDD0 410 470 410 470 370 410 mA IDD1 510 590 510 590 470 550 mA IDD2P 110 130 110 130 90 110 mA IDD2F 210 250 210 250 190 210 mA IDD2Q 170 190 170 190 150 170 mA IDD3P 150 170 150 170 130 150 mA IDD3N 230 270 230 270 190 230 mA IDD4R 730 850 730 850 610 750 mA IDD4W 770 910 770 910 650 810 mA IDD5 770 870 770 870 730 810 mA Normal 8 8 8 8 8 8 mA Low power 4 4 4 4 4 4 mA 1390 1610 1390 1610 1130 1330 mA Symbol IDD6 Unit IDD7A Notes Optional * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Detailed test conditions for DDR SDRAM IDD1 & IDD IDD1 : Operating current: One bank operation 1. Typical Case : Vdd = 2.5V, T=25’ C 2. Worst Case : Vdd = 2.7V, T= 10’ C 3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. lout = 0mA 4. Timing patterns - DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP V82658B04S Rev. 1.2 March 2002 9 V82658B04S MOSEL VITELIC AC Characteristics (AC operating conditions unless otherwise noted) (PC1600) Parameter (PC2100A) Min Max Min Max Unit Symbol Min Row Cycle Time tRC 60 - 65 - 70 - ns Auto Refresh Row Cycle Time tRFC 67 - 75 - 80 - ns Row Active Time tRAS 45 120K 48 120K 50 120K ns Row Address to Column Address Delay tRCD 18 - 20 - 20 - ns Row Active to Row Active Delay tRRD 14 - 15 - 15 - ns Column Address to Column Address Delay tCCD 1 - 1 - 1 - CLK Row Precharge Time tRP 18 - 20 - 20 - ns Write Recovery Time tWR 15 - 15 - 15 - ns Last Data-In to Read Command tDRL 1 - 1 - 1 - CLK Auto Precharge Write Recovery + Precharge Time tDAL 35 - 35 - 35 - ns System Clock Cycle Time tCK 7 12 7.5 12 8 12 ns 7.5 12 10 12 10 12 ns CAS Latency = 2.5 CAS Latency = 2 Max (PC2100B) Note Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 CLK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 CLK Data-Out edge to Clock edge Skew tAC -0.75 0.75 -0.75 0.75 -0.8 0.8 ns DQS-Out edge to Clock edge Skew tDQSCK -0.75 0.75 -0.75 0.75 -0.8 0.8 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.5 - 0.5 - 0.6 ns Data-Out hold time from DQS tQH tHPmin -0.75ns - tHPmin -0.75ns - tHPmin -0.75ns - ns 1 Clock Half Period tHP tCH/L min - tCH/L min - tCH/L min - ns 1 Input Setup Time (fast slew rate) tIS 0.9 - 0.9 - 1.1 - ns 2,3,5,6 Input Hold Time (fast slew rate) tIH 0.9 - 0.9 - 1.1 - ns 2,3,5,6 Input Setup Time (slow slew rate) tIS 1.0 - 1.0 - 1.1 - ns 2,4,5,6 Input Hold Time (slow slew rate) tIH 1.0 - 1.0 - 1.1 - ns 2,4,5,6 tIPW 2.2 - 2.2 - - - ns 6 Write DQS High Level Width tDQSH 0.4 0.6 0.4 0.6 0.4 0.6 CLK Write DQS Low Level Width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 CLK CLK to First Rising edge of DQS-In tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 CLK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.5 - 0.5 - 0.6 - ns 7 Data-in Hold Time to DQS-In (DQ & DM) tDH 0.5 - 0.5 - 0.6 - ns 7 DQ & DM Input Pulse Width tDIPW 1.75 - 1.75 - 2 - ns Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 CLK Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 CLK Input Pulse Width V82658B04S Rev. 1.2 March 2002 10 V82658B04S MOSEL VITELIC AC Characteristics (cont.) (PC1600) Parameter Max (PC2100B) (PC2100A) Min Max Min Max Unit Symbol Min Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - CLK Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - CLK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 CLK Mode Register Set Delay tMRD 2 - 2 - 2 - CLK Power Down Exit Time tPDEX 10 - 10 - 10 - ns Exit Self Refresh to Non-Read Command tXSNR 75 - 75 - 80 - ns Exit Self Refresh to Read Command tXSRD 200 - 200 - 200 - CLK Average Periodic Refresh Interval tREFI - 15.6 - 15.6 - 15.6 us Note 8 Notes: 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, CS, RAS, CAS, WE. 3. For command/address input slew rate >=1.0V/ns 4. For command/address input slew rate >=0.5V/ns and <1.0V/ns 5. CK, CK slew rates are >=1.0V/ns 6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed by design or tester correlation. 7. Data latched at both rising and falling edges of Data Strobes(DQS) : DQ, DM 8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. Absolute Maximum Ratings Parameter Symbol Rating Unit Ambient Temperature TA 0 ~ 70 °C Storage Temperature TSTG -55 ~ 125 °C VIN , V OUT -0.5 ~ 3.6 V VDD -0.5 ~ 3.6 V VDDQ -0.5 ~ 3.6 V Output Short Circuit Current IOS 50 mA Power Dissipation PD 8 W TSOLDER 260 • 10 °C • Sec Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Voltage on VDDQ relative to V SS Soldering Temperature • Time Note: Operation at above absolute maximum rating can adversely affect device reliability V82658B04S Rev. 1.2 March 2002 11 V82658B04S MOSEL VITELIC Package Dimensions Units : Inches (Millimeters ) 2.70 (67.60) 2.50 (63.60) 199 39 41 0.456 11.40 0.086 2.15 1.896 (47.40) 0.17 (4.20) 0.096 (2.40) 0.07 (1.8) 0.79 (20.00) 0.24 (6.0) 1 Z 1.25 (31.75) F ull R 2x 0.16 0.039 (4.00 0.10) 2- 0.07 (1.80) Y 0.098 2.45 200 0.157 Min (4.00 Min) 0.095 Max (2.40 Max) 0.04 0.0039 (1.00 0.10) 0.16 0.0039 (4.00 0.10) 0.04 0.0039 (1.00 0.1) Detail Z 0.018 (0.45 12 0.001 0.03) 0.01 (0.25) 0.024 T Y P (0.60 T Y P ) Detail Y T olerances : .006(.15) unles s otherwis e s pecified V82658B04S Rev. 1.2 March 2002 0.102 Min 40 42 (2.55 Min) 2 V82658B04S MOSEL VITELIC Label Information Module Density MOSEL VITELIC Part Number Criteria of PC2100 or PC1600 DIMM manufacture date code V82658B04SXXX-XX 64MB CLXX PC2100U-2533-080-A XXXX-XXXXXXX Assembly in Taiwan PC2100 U - 2533 - 08 0 - A UNBUFFERED DIMM Gerber file JEDEC CL = 2.5 (CLK) tRCD = 3 (CLK) tRP = 3 (CLK) V82658B04S Rev. 1.2 March 2002 SPD Revision 0 13 CAS Latency V82658B04S MOSEL VITELIC WORLDWIDE OFFICES U.S.A. TAIWAN SINGAPORE UK & IRELAND 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. 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MOSEL VITELIC does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. The information in this document is subject to change without notice. MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC. V82658B04S Rev. 1.2 March 2002 14