NEC 2SA1646-Z

DATA SHEET
SILICON POWER TRANSISTOR
2SA1646, 2SA1646-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1646 is a mold power transistor developed for high-
PACKAGE DRAWING (UNIT: mm)
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for highcurrent switching.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) = −0.3 V MAX. @IC = −6 A
QUALITY GRADES
• Standard
?
Please refer to “Quality Grades on NEC Semiconductor Devices”
?
(Document No. C11531E) published by NEC Corporation to know
?
the specification of quality grade on the devices and its
?
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
−150
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
VEBO
−7.0
V
Collector current
ID(DC)
−10
A
Collector current
IC(pulse)
−20
A
Base current
IB(DC)
−6.0
A
PW ≤ 300 µs,
duty cycle ≤ 10%
Total power dissipation
PT
Tc = 25°C
40
W
Total power dissipation
PT
Ta = 25°C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrode Connection
?
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16120EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1646, 2SA1646-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
Unit
Collector cutoff current
ICBO
VCB = −100 V, IE = 0
−10
µA
Emitter cutoff current
IEBO
VEB = −5 V, IC = 0
−10
µA
DC current gain
hFE1*
VCE = −2 V, IC = −0.5 A
100
DC current gain
hFE2*
VCE = −2 V, IC = −2 A
100
DC current gain
hFE3*
VCE = −2 V, IC = −6 A
60
Collector saturation voltage
VCE(sat)1*
IC = −6 A, IB = −0.3 A
−0.3
V
Collector saturation voltage
VCE(sat)2*
IC = −8 A, IB = −0.4 A
−0.5
V
Base saturation voltage
VBE(sat)1*
IC = −6 A, IB = −0.3 A
−1.2
V
Base saturation voltage
VBE(sat)2*
IC = −8 A, IB = −0.4 A
−1.5
V
Gain bandwidth product
fT
−
400
−
−
VCE = −10 V, IC = −0.5 A
150
MHz
Collector capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
250
pF
Turn-on time
ton
0.3
µs
Storage time
tstg
IC = −6 A, IB1 = −IB2 = −0.3 A,
RL = 8.3 Ω, VCC = −50 V
1.5
µs
0.4
µs
Refer to the test circuit.
Fall time
tf
* Pulse test PW ≤ 350 µs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
MAX.
Data Sheet D16120EJ1V0DS
2SA1646, 2SA1646-Z
IC Derating dT (%)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Case Temperature TC (°C)
Collector Current IC (A)
Collector Current IC (A)
Case Temperature TC (°C)
Single pulse
Collector to Emitter Voltage VCE (V)
Collector Saturation Voltage VCE(sat) (V)
DC Current Gain hFE
Pulse test
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Pulse test
Collector Current IC (A)
Data Sheet D16120EJ1V0DS
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Data Sheet D16120EJ1V0DS
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2SA1646, 2SA1646-Z
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
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and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4