DATA SHEET SILICON POWER TRANSISTOR 2SA1648,1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 5.0 ±0.2 +0.2 Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −5.0 A −10 A IB(DC) −2.5 A Total power dissipation (Tc = 25°C) PT 18 W Total power dissipation (Ta = 25°C) PT Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current (DC) IC(pulse) Note 1 1.0 Note 2 , 2.0 Note 3 W 0.75 1.1±0.2 1 2 3 +0.2 1.5-0.1 0.5±0.1 1.0 MIN. 1.8TYP. V 4 2.3±0.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 0.7 −100 Collector current (pulse) 6.5±0.2 5.0±0.2 5.5±0.2 10.0 MAX. VCBO 0.5 −0.1 TO-251 (MP-3) Unit Collector to base voltage +0.2 0.5 −0.1 2.3 2.3 2.0 MIN. Ratings 3 1.1 ±0.2 0.8 4.3 MAX. Symbol 2 5.5 ±0.2 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter 0.5 ±0.1 4 13.7 MIN. • Available for high-current control in small dimension • Z type is a lead processed product and is deal for mounting a hybrid IC. • Mold package that does not require an insulating board or insulation bushing • Low collector saturation voltage: VCE(sat)1 = −0.3 V MAX. (IC = −3.0 A) • Fast switching speed: tf = 0.3 µs MAX. (IC = −3.0 A) • High DC current gain and excellent linearity 2.3 ±0.2 7.0 MIN. FEATURES 1.5 −0.1 6.5 ±0.2 +0.2 PACKAGE DRAWINGS (Unit: mm) 1.6 ±0.2 The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. TO-252 (MP3Z) ELECTRODE CONNECTION 1. 2. 3. 4. Base Collector Emitter Collector (Fin) Notes 1. PW ≤ 300 µs, Duty Cycle ≤ 10% 2. Printing board mounted 3. 7.5 mm2 × 0.7 mm ceramic board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16121EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. c 2002 2SA1648,1648-Z ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions MIN. Collector to emitter voltage VCEO(SUS) IC = −3.0 A, IB = −0.3 A, L = 1 mH −60 V Collector to emitter voltage VCEX(SUS) IC = −3.0 A, IB2 = −IB1 = −0.3 A, VBE(OFF) = 1.5 V, L = 180 µH, clamped −60 V MAX. Unit Collector cutoff current ICBO VCE = −60 V, IE = 0 A −10 µA Collector cutoff current ICER VCE = −60 V, RBE = 50 Ω, TA = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(OFF) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −60 V, VBE(OFF) = 1.5 V, TA = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 A −10 µA DC current gain Note VCE = −2.0 V, IC = −0.5 A 100 Note VCE = −2.0 V, IC = −1.0 A 100 Note VCE = −2.0 V, IC = −3.0 A 60 hFE1 DC current gain hFE2 DC current gain hFE3 Collector saturation voltage Collector saturation voltage 400 IC = −3.0 A, IB = −0.15 A −0.3 V Note IC = −4.0 A, IB = −0.2 A −0.5 V Note IC = −3.0 A, IB = −0.15 A −1.2 V Note IC = −4.0 A, IB = −0.2 A −1.5 V VCE(sat)1 VCE(sat)2 VBE(sat)1 Base saturation voltage VBE(sat)2 Cob VCB = −10 V, IE = 0 A, f = 1.0 MHz 80 pF 90 MHz Gain bandwidth product fT VCE = −10 V, IC = 0.5 A Turn-on time ton Storage time tstg IC = −3.0 A, RL = 17 Ω, IB1 = −IB2 = −0.15 A, VCC ≅ −50 V Refer to SWITCHING TIME TEST CIRCUIT. Fall time 200 Note Base saturation voltage Collector capacitance tf Note Pulse test PW ≤ 350 µs, Duty Cycle ≤ 2%/Pulsed hFE CLASSIFICATION Marking M L K hFE2 100 to 200 150 to 300 200 to 400 SWITCHING TIME TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D16121EJ3V0DS 0.3 µs 1.5 µs 0.3 µs 2SA1648,1648-Z IC Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°C) Case Temperature TC (°C) TC = 25°C Collector Current IC (A) Single pulse Transient Thermal Resistance rth(j−c) (°C/W) Case Temperature TC (°C) Collector to Emitter Voltage VCE (V) TC = 25°C Single pulse Rth(j−A) = 125 °C/W Rth(j−C) = 6.94 °C/W Pulse Width PW (s) DC Current Gain hFE Collector Current IC (A) Pulse test Collector to Emitter Voltage VCE (V) Data Sheet D16121EJ3V0DS Collector Current IC (A) 3 IC = 20 A • IB Pulse test Gain Bandwidth Product fT (MHz) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SA1648,1648-Z Collector Current IC (A) TC = 25°C Collector Current IC (A) Collector Current IC (A) Collector Capacitance Cob (pF) IE = 0 A Collector to Base Voltage VCB (V) StorageTime tstg (µs) Fall Time tf (µs) IC = 20 A • IB1 = −20 A • IB2 Collector Current IC (A) 4 Data Sheet D16121EJ3V0DS Collector to Emitter Voltage VCE (V) 2SA1648,1648-Z • The information in this document is current as of August, 2004. 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