NEC 2SA1744K

DATA SHEET
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1744 is a power transistor developed for high-speed
PACKAGE DRAWING (UNIT: mm)
switching and features a high hFE at Low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −3 A)
VCE(sat) ≤ 0.3 V (IC = −8 A, IB = −0.4 A)
• Full-mold package that does not require an insulating board or
bushing
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−15
A
IC(pulse)*
−30
A
IB(DC)
−7.5
A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
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Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector to emitter voltage
VCEO(SUS)
IC = −8.0 A, IB = −0.8 A, L = 1 mH
−60
V
Collector to emitter voltage
VCEX(SUS)
IC = −8.0 A, IB1 = −IB2 = −0.8 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
−60
V
Collector cutoff current
ICBO
VCB = −60 V, IE = 0
−10
µA
Collector cutoff current
ICER
VCE = −60 V, RBE = 50 Ω, TA = 125°C
−1.0
mA
Collector cutoff current
ICEX1
VCE = −60 V, VBE(OFF) = 1.5 V
−10
µA
Collector cutoff current
ICEX2
VCE = −60 V, VBE(OFF) = 1.5 V,
TA = 125°C
−1.0
mA
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
−10
µA
DC current gain
hFE1*
VCE = −2.0 V, IC = −1.5 A
100
DC current gain
hFE2*
VCE = −2.0 V, IC = −3.0 A
100
DC current gain
hFE3*
VCE = −2.0 V, IC = −8.0 A
60
400
Collector saturation voltage
VCE(sat)1*
IC = −8.0 A, IB = −0.4 A
−0.3
V
Collector saturation voltage
VCE(sat)2*
IC = −12 A, IB = −0.6 A
−0.5
V
Base saturation voltage
VBE(sat)1*
IC = −8.0 A, IB = −0.4 A
−1.2
V
Base saturation voltage
VBE(sat)2*
IC = −12 A, IB = −0.6 A
−1.5
V
Collector capacitance
Cob
VCB = −10 V, IE = 0, f = 1.0 MHz
300
pF
80
MHz
Gain bandwidth product
fT
VCE = −10 V, IC = −1.5 A
Turn-on time
ton
Storage time
tstg
IC = −8.0 A, RL = 6.3 Ω,
IB1 = −IB2 = −0.4 A, VCC ≅ −50 V
0.3
µs
1.5
µs
0.3
µs
Refer to the test circuit.
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