DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage VCB0 −20 V Collector to Emitter Voltage VCE0 −12 V Emitter to Base Voltage VEB0 −3.0 V Collector Current IC −50 mA Total Power Dissipation PT 200 mW Junction Temperature Ti 150 °C Storage Temperature Tstg −65 to +150 °C Marking 0.3 Parameter ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Symbol 3 1 1.1 to 1.4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 2 0.4 +0.1 –0.05 High speed switching characteristics • 0.65 +0.1 –0.15 1.5 0.16 +0.1 –0.06 • 2 Test Conditions 0 to 0.1 | S21e | = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA 0.95 • 0.4 +0.1 –0.05 fT = 5.5 GHz TYP. 0.95 • PACKAGE DIMENSIONS (in milimeters) PIN CONNECTIONS 1: Emitter 2: Base 3: Collector Marking: T93 MIN. TYP. MAX. Unit Collector Cutoff Current ICB0 VCB = −10 V −0.1 µA Emitter Cutoff Current IEB0 VEB = −2 V −0.1 µA DC Current Gain hFE VCE = −10 V, IC = −15 mA 20 40 Gain Bandwidth Product fT VCE = −10 V, IC = −15 mA 4.0 5.5 Collector Capacitance Cre* Insertion Power Gain | S21e | Noise Figure NF VCB = −10 V, IE = 0, f = 1 MHz 2 VCE = −10 V, IC = −15 mA, f = 1.0 GHz VCE = −10 V, IC = −3.0 mA, f = 1 GHz 100 GHz 0.5 8.0 1 10.0 pF dB 2.0 3 dB * Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Rank FB Marking T93 hFE 20 to 100 Document No. P11028EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan © 1996 2SA1978 SWITCHING CHARACTERISTICS Symbol Parameter Vin = 1 V Unit TYP Turn-on Delay Time ton (delay) 1.10 ns Rise Time tr 0.77 ns Turn off Delay Time toff (delay) 0.40 ns Fall Time tf 0.79 ns SWITCHING TIME MEASUREMENT CIRCUIT VCC ( – ) Vin RC2 RC1 20 ns RL1 RL2 VOUT Vin ton (delay) Sampling Oscilloscope RS 50 Ω VOUT VSS ( – ) RE VEE ( + ) Vin = 1 V, VBB = −0.5 V, RC1 = RC2 2 RS RC RL1 RL2 RE VEE VCC (Ω) (Ω) (Ω) (Ω) (Ω) (V) (V) 160 1k 200 250 2.7 k 27 26.3 tr toff (delay) tf 2SA1978 TYPICAL CHARACTERISTICS TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE NOISE FIGURE VS. COLLECTOR CURRENT 6 VCE = 10 V f = 1 GHZ 300 NF - Noise Figure - dB PT - Total Power Dissipation - mV 400 200 100 0 50 100 150 10 1 100 TA - Ambient Temperature - ˚C IC - Collector Current - mA BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT COLLECTOR SATURATION AND BASE TO EMITTER VOLTAGE VS. COLLECTOR CURRENT –1.0 –0.1 –0.01 –0.1 –1 –10 –100 –1000 VCE (sat) - Collector Saturation Voltage - V VBE (sat) - Base Satturation Voltage - V –10 VCE = –1 V VBE (ON) - DC Base Voltage - V 2 0 200 –10 VCE = –10 V IC = 10 · IB –1.0 –0.1 –0.01 –0.1 –1 –10 –100 IC - Collector Current - mA IC - Collector Current - mA INSERTION GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 –1000 14 f = 1 GHZ 12 VCE = –10 V 10 8 6 VCE = –3 V 4 VCE = –1 V 2 0 f = 1 GHZ fT - Gain Bandwidth Product - GHZ S21e 2 - Insertion Power Gain - dB 4 12 VCE = –10 V 10 8 6 VCE = –3 V 4 VCE = –1 V 2 0 1 10 IC - Collector Current - mA 100 1 10 100 IC - Collector Current - mA 3 2SA1978 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE INSERTION GAIN vs. FREQUENCY 2 f = 1 MHz |S21e|2- Insertion Power Gain - dB Cre - Collector Capacitance - pF 30 1.5 1 0.5 20 VCE = –10 V IC = –15 mA 10 VCE = 1 V IC = –5 mA 0 –10 0 1 10 100 100 200 300 VCBO - Collector to Base Voltage - V 100 500 1000 3000 f - Frequency - MHz DC CURRENT GAIN vs. COLLECTOR CURRENT 100 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = –3 V VCE = –2 V VCE = –1 V 10 1 –0.1 –1 –10 –100 Ic - Collector Current - mA 4 hFE - DC Current Gain hFE - DC Current Gain VCE = –10 V –1000 10 1 –0.1 –1 –10 –100 Ic - Collector Current - mA –1000 2SA1978 S-PARAMETER S11 3 GHZ 3 GHZ VCE = –10 V, IC = –15 mA f = 100 MHZ f = 100 MHZ VCE = –1 V, IC = –5 mA S22 VCE = –10 V, IC = –15 mA 3 GHZ 3 GHZ VCE = –1 V, IC = –5 mA 100 MHZ 100 MHZ 5 2SA1978 S-PARAMETER (VCE = 1 V, IC = 5 mA, Zo = 50 Ω) f S21 S11 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100 0.527 − 47.1 10.5 149. 0.0359 70.6 0.881 − 21.1 200 0.468 − 83.4 8.37 128. 0.0584 58.7 0.716 − 34.2 300 0.427 − 109 6.63 114. 0.0729 53.6 0.586 − 40.9 400 0.407 − 128 5.36 104. 0.0835 52.1 0.503 − 44.3 500 0.393 − 143 4.46 96.6 0.0930 52.1 0.443 − 45.8 600 0.388 − 154 3.82 90.2 0.100 53.1 0.401 − 46.7 700 0.386 − 164 3.34 84.9 0.109 53.3 0.373 − 47.7 800 0.388 − 172 2.96 80.1 0.118 54.4 0.351 − 49.1 900 0.392 − 179 2.67 75.8 0.128 55.6 0.332 − 50.1 1000 0.394 174 2.43 71.6 0.137 56.4 0.319 − 51.4 1100 0.399 169 2.24 68.1 0.147 56.9 0.306 − 53.2 1200 0.405 163 2.07 64.6 0.158 57.2 0.298 − 54.5 1300 0.410 159 1.93 61.3 0.168 57.6 0.289 − 57.0 1400 0.416 154 1.81 58.0 0.179 57.7 0.280 − 59.3 1500 0.422 150 1.71 54.9 0.190 57.7 0.274 − 61.2 1600 0.431 147 1.62 52.0 0.201 57.7 0.267 − 64.4 1700 0.438 143 1.54 49.3 0.213 57.5 0.262 − 66.7 1800 0.445 140 1.47 46.6 0.224 57.2 0.259 − 70.3 1900 0.451 136 1.41 44.1 0.236 56.8 0.252 − 73.6 2000 0.460 133 1.35 41.5 0.248 56.3 0.247 − 76.3 2100 0.465 130 1.30 39.2 0.261 55.7 0.243 − 80.2 2200 0.473 127 1.26 36.9 0.273 55.1 0.239 − 84.4 2300 0.481 125 1.21 34.8 0.286 54.3 0.234 − 87.2 2400 0.487 122 1.17 32.5 0.299 53.3 0.235 − 91.9 2500 0.493 119 1.14 30.6 0.312 52.6 0.230 − 95.9 6 2SA1978 S-PARAMETER (VCE = 3 V, IC = 5 mA, Zo = 50 Ω) f S21 S11 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100 0.558 − 37.1 11.0 153. 0.0288 74.3 915 − 16.3 200 0.485 − 67.9 9.13 133. 0.0467 83.0 784 − 27.0 300 0.423 − 92.5 7.48 119. 0.0611 58.1 670 − 33.0 6.21 109. 0.0703 56.5 590 − 36.0 101. 0.0801 56.1 531 − 37.4 400 0.381 − 111 500 0.353 − 127 5.18 600 0.339 − 140 4.47 95.1 0.0880 56.7 490 − 38.1 700 0.329 − 151 3.92 89.9 0.0938 57.5 461 − 33.8 800 0.325 − 160 3.48 84.9 0.104 57.9 438 − 39.8 900 0.325 − 169 3.14 80.7 0.113 58.7 419 − 40.4 1000 0.326 − 176 2.87 76.9 0.122 59.5 408 − 41.6 1100 0.330 177 2.64 73.0 0.131 60.5 393 − 42.8 1200 0.335 170 2.44 69.6 0.140 61.2 386 − 44.0 1300 0.339 165 2.28 66.5 0.150 61.3 377 − 45.9 1400 0.345 160 2.13 63.3 0.160 61.9 366 − 47.5 1500 0.351 155 2.01 60.2 0.170 61.9 362 − 49.0 1600 0.360 151 1.90 57.4 0.181 61.8 354 − 51.0 1700 0.366 147 1.81 54.6 0.191 61.8 349 − 53.0 1800 0.374 143 1.72 52.0 0.202 61.7 344 − 55.5 1900 0.382 140 1.65 49.5 0.213 61.3 337 − 58.1 2000 0.390 137 1.58 47.0 0.223 61.0 334 − 60.4 2100 0.396 133 1.52 44.6 0.233 60.4 328 − 63.0 2200 0.404 130 1.46 42.4 0.243 60.2 321 − 65.9 2300 0.413 127 1.41 40.2 0.251 59.4 318 − 68.3 2400 0.418 125 1.36 38.0 0.273 58.9 314 − 72.1 2500 0.427 122 1.32 35.9 0.255 58.2 303 − 74.8 7 2SA1978 S-PARAMETER (VCE = 10 V, IC = 5 mA, Zo = 50 Ω) f S21 S11 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100 0.529 − 28.8 11.3 156. 0.0234 75.4 0.939 − 12.8 200 0.548 − 53.5 9.70 138. 0.0412 67.4 0.836 − 21.7 300 0.463 − 73.9 8.20 124. 0.0530 62.1 0.739 − 27.2 400 0.400 − 91.4 6.94 114. 0.0620 59.7 0.666 − 29.9 500 0.349 − 106 5.86 106. 0.0712 58.9 0.608 − 31.4 600 0.316 − 119 5.09 100. 0.0793 59.8 0.567 − 31.9 700 0.292 − 131 4.49 94.6 0.0860 59.6 0.539 − 32.7 800 0.277 − 141 4.00 89.7 0.0938 60.4 0.516 − 33.5 900 0.267 − 152 3.63 85.4 0.101 61.3 0.498 − 34.2 1000 0.261 − 160 3.31 81.5 0.109 61.9 0.485 − 35.1 1100 0.259 − 169 3.04 77.9 0.117 62.8 0.472 − 35.9 1200 0.260 − 177 2.82 74.5 0.125 63.2 0.463 − 36.9 1300 0.263 176 2.63 71.3 0.133 63.9 0.455 − 38.4 1400 0.267 169 2.46 68.2 0.143 64.4 0.448 − 39.5 1500 0.272 164 2.32 65.3 0.152 64.5 0.440 − 40.8 1600 0.280 159 2.20 62.5 0.161 64.6 0.434 − 42.5 1700 0.286 154 2.09 59.8 0.171 64.9 0.428 − 44.1 1800 0.293 149 1.99 57.3 0.191 64.8 0.423 − 46.0 1900 0.300 145 1.90 54.8 0.192 64.4 0.417 − 47.8 2000 0.308 141 1.82 52.3 0.201 64.5 0.413 − 49.7 2100 0.315 138 1.75 49.9 0.212 63.9 0.408 − 51.9 2200 0.325 134 1.68 47.6 0.223 63.8 0.402 − 54.3 2300 0.333 131 1.63 45.5 0.235 63.2 0.397 − 56.1 2400 0.341 128 1.57 43.3 0.246 62.7 0.395 − 58.7 2500 0.348 125 1.52 41.2 0.258 62.1 0.388 − 61.0 8 2SA1978 S-PARAMETER (VCE = 10 V, IC = 15 mA, Zo = 50 Ω) f S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100 0.354 − 46.6 17.87 147. 0.0190 74.6 866 − 18.3 200 0.290 − 81.8 13.45 125. 0.0317 70.0 708 − 26.9 300 0.247 − 107 10.35 113. 0.0420 68.4 601 − 29.8 400 0.226 − 126 8.294 104. 0.0518 68.3 539 − 30.5 500 0.215 − 141 6.799 97.8 0.0626 69.8 497 − 30.2 600 0.210 − 154 5.805 92.4 0.0720 70.8 470 − 30.1 700 0.208 − 164 5.050 88.1 0.0820 71.0 450 − 30.2 800 0.211 − 172 4.475 84.1 0.0919 70.9 435 − 30.6 900 0.215 179 4.008 80.5 0.102 70.9 423 − 31.1 1000 0.218 172 3.647 77.2 0.112 70.7 415 − 32.2 1100 0.225 166 3.345 74.2 0.121 70.9 405 − 32.9 1200 0.232 160 3.086 71.1 0.133 70.3 400 − 34.2 1300 0.237 156 2.871 68.4 0.143 70.2 394 − 35.7 1400 0.244 151 2.685 65.7 0.153 69.7 386 − 36.8 1500 0.251 147 2.532 63.2 0.165 69.2 381 − 38.4 1600 0.261 143 2.392 60.5 0.174 68.7 376 − 39.9 1700 0.268 140 2.265 58.2 0.185 68.0 373 − 41.6 1800 0.276 137 2.155 55.7 0.196 67.3 366 − 43.7 1900 0.284 134 2.059 53.5 0.207 66.5 360 − 45.7 2000 0.292 131 1.974 51.1 0.219 65.8 356 − 47.5 2100 0.299 128 1.897 49.0 0.230 65.1 350 − 49.7 2200 0.308 125 1.826 46.9 0.242 64.2 345 − 51.8 2300 0.317 123 1.763 44.7 0.252 63.3 341 − 53.8 2400 0.324 121 1.697 42.7 0.264 62.4 337 − 56.7 2500 0.332 119 1.646 40.7 0.276 61.5 331 − 58.8 9 2SA1978 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11