DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION (in millimeters) consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN. 3.5 +0.3 –0.2 5.0 MIN. differential amplifier and ultra-high-speed switching applications. RATINGS UNIT Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 14 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 50 mA Collector Dissipation PC 200 mW/unit Total Power Dissipation PT 300 mW Junction Temperature Tj 200 ˚C Storage Temperature Tstg –65 to +200 ˚C 5 2 6 1 PIN CONNECTIONS 4 1C 1.25 ±0.1 1.25 ±0.1 SYMBOL 3 0.1 +0.06 –0.03 PARAMETER 4 2.0 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 3 2C 1 2B 6 1B ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL 0.6 ±0.05 PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that 5 1E TEST CONDITIONS MIN. TYP. 2 2E MAX. UNIT Collector Cut-off Current ICES VCE = 15 V, RBE = 0 50 nA Emitter Cut-off Current IEBO VEB = 2.0 V, IC = 0 50 nA DC Current Gain hFE VCE = 10 V, IC = 10 mA 25 hFE Ratio hFE1/hFE2 VCE = 10 V, IC = 10 mA *1 0.8 Difference of Base to Emitter Voltage ∆VBE VCE = 10 V, IC = 10 mA Gain Bandwidth Product Output Capacitance fT Cob VCE = 10 V, IC = 10 mA 80 200 1.0 30 *2 VCB = 10 V, IE = 0, f = 1.0 MHz 1.5 *3 2.0 1.1 mV GHz 1.5 pF * 1. hFE1 is the smaller hFE value of the 2 transistors. 2. Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the 2SC1275). 3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to the guard terminal of the bridge. Document No. P11671EJ1V0DS00 (1st edition) Date Published July 1996 P Printed in Japan © 1996 2SC1927 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V hFE - DC Current Gain 100 70 50 30 20 10 7 VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - V TYPICAL CHARACTERISTICS (TA = 25 ˚C) BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 2 IC = 10·IB 1 VBE(sat) 0.5 0.2 0.1 VCE(sat) 0.05 0.02 0.1 0.2 5 0.1 0.2 0.3 0.5 0.71 0.5 1 2 5 10 20 50 IC - Collector Current - mA 2 3 5 7 10 20 30 50 IC - Collector Current - mA 20 10 5 2 1 0.5 0.6 0.7 0.8 0.9 VBE - Base to Emitter Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT fT - Gain Bandwidth Product - MHz 3000 2000 VCE = 5.0 V 1000 700 500 VCE = 2.0 V 300 200 100 70 50 0.1 0.2 0.30.5 0.71 2 3 5 7 10 20 30 50 IC - Collector Current - mA 2 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 3 Cob - Output Capacitance - pF IC - Collector Current - mA COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 10 V IE = 0 f = 1.0 MHz 2 1 0.7 0.5 0.3 0 0.5 1 2 3 5 7 10 2030 VCB - Collector to Base Voltage - V 2SC1927 [MEMO] 3 2SC1927 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2