DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS encapsulated into new hermetic stripline packages, "micro X". (Unit : mm) These are designed for small signal amplifier, low noise amplifier, FEATURES 4.0 MIN. 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2 0.5±0.05 4.0 MIN. 1 and oscillator applications in the L to C band, and CML circuit use. 4.0 MIN. 4 4.0 MIN. 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz 45° 3 Emitter Collector Emitter Base 1.8 MAX. 0.1−0.03 1. 2. 3. 4. +0.06 0.55 0.5±0.05 2.55±0.2 φ 2.1 Derating curves of the 2SC2148, 2SC2149. The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves. The information in this document is subject to change without notice. Document No. P11809EJ2V0DS00 (2nd edition) (Previous No. TC-1428) Date Published August 1996 P Printed in Japan © 1981 2SC2148, 2SC2149 PT−Total Power Dissipation−mW 2SC2148 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 with infinite heat sink; Rth(j-c) 130 °C/W mounting on ceramic boad with solder (Al2O3 20 × 50 × 0.635 mm) ; Rth(j-a) 190 °C/W 400 300 200 free-air; Rth(j-a) 610 °C/W 100 0 50 100 150 200 48 TA−Ambient Temperature−°C 2SC2149 PT−Total Power Dissipation−mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 600 with infinite heat sink; Rth(j-c) 120 °C/W 400 mounting on ceramic boad with solder (Al2O3 20 × 50 × 0.635 mm) ; Rth(j-a) 180 °C/W 200 free-air; Rth(j-a) 600 °C/W 0 50 100 110 140 150 TA−Ambient Temperature−°C 2 200 2SC2148, 2SC2149 2SC2148 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage V CBO 30 V Collector to Emitter Voltage V CEO 14 V Emitter to Base Voltage V EBO 3.0 V Collector Current IC 50 mA Total Power Dissipation P T(TA = 48 °C) 250 mW Total Power Dissipation P T(Tc = 150 °C) 250 mW Junction Temperature Tj 200 °C Storage Temperature Tstg −65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µA VCB = 15 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µA VEB = 2.0 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product fT Output Capacitance * Cob Insertion Gain S21e Noise Figure NF 2.1 Maximum Available Gain MAG 13.3 30 2 80 7.5 200 VCE = 10 V, IC = 10 mA 3.0 GHz 0.55 pF VCB = 10 V, IE = 0, f = 1.0 MHz 9.3 dB VCE = 10 V, IC = 10 mA, f = 1.0 GHz dB VCE = 10 V, IC = 3.0 mA, f = 500 MHz dB VCE = 10 V, IC = 10 mA, f = 1.0 GHz 3.5 VCE = 10 V, IC = 10 mA * The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge. TYPICAL CHARACTERISTICS (TA = 25 °C) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 10 V IC−Collector Current−mA hFE−DC Current Gain VCE = 10 V 100 50 20 10 5 1 10 0.5 1 5 10 IC−Collector Current−mA 50 0.5 0.5 0.6 0.7 0.8 0.9 VBE−Base to Emitter Voltage−V 3 2SC2148, 2SC2149 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 15 VCE = 10 V f = 1.0 GHz VCE = 10 V 5 S21e2−Insertion Gain−dB fT−Gain Bandwidth Product−GHz 7 3 1 0.5 0.3 0.1 0.5 1 5 10 10 5 0 0.5 50 1 IC−Collector Current−mA 10 50 IC−Collector Current−mA COLLECTOR AND EMITTER CAPACITANCE vs. REVERSE VOLTAGE NOISE FIGURE vs. COLLECTOR CURRENT 3 7 VCE = 10 V f = 500 MHz f = 1.0 MHz 6 2 1 NF−Noise Figure−dB Cob−Collector Capacitance−pF Cib−Emitter Capacitance−pF 5 Cob Cib 0.5 5 untuned (50 Ω) 4 tuned 3 2 1 0.3 0 0.5 1 2 5 10 20 30 VCB−Collector to Base Voltage−V VEB−Emitter to Base Voltage−V 4 0 0.5 1 5 10 IC−Collector Current−mA 50 2SC2148, 2SC2149 2SC2149 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage V CBO 25 V Collector to Emitter Voltage V CEO 12 V Emitter to Base Voltage V EBO 3.0 V Collector Current IC 70 mA Total Power Dissipation P T(TA = 25 °C) 290 mW Total Power Dissipation P T(Tc = 140 °C) 500 mW Junction Temperature Tj 200 °C Storage Temperature T stg −65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µA VCB = 15 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µA VEB = 2.0 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product fT 5.0 GHz Output Capacitance * Cob 0.6 pF S21e2 12.7 dB Insertion Gain Noise Figure NF Maximum Available Gain MAG 30 5.0 70 200 VCE = 10 V, IC = 20 mA 6.7 dB 1.7 dB 2.6 4.0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz f = 1.0 GHz VCE = 10 V, IC = 20 mA f = 1.0 GHz VCE = 10 V, IC = 5.0 mA dB 17 dB 11 f = 2.0 GHz f = 2.0 GHz f = 1.0 GHz VCE = 10 V, IC = 20 mA dB f = 2.0 GHz * The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge. TYPICAL CHARACTERISTICS (TA = 25 °C) DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 200 70 50 VCE = 10 V VCE = 10 V IC−Collector Current−mA hFE−DC Current Gain 100 50 20 20 10 5 2 1 10 0.5 1 5 10 IC−Collector Current−mA 50 70 0.5 0.5 0.6 0.7 0.8 0.9 VBE−Base to Emitter Voltage−V 5 2SC2148, 2SC2149 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 15 VCE = 10 V 5 VCE = 10 V f = 1.0 GHz S21e2−Insertion Gain−dB fT−Gain Bandwidth Product−GHz 7 2 1 0.5 0.2 0.1 0.5 1 5 10 10 5 0 0.5 50 70 1 IC−Collector Current−mA COLLECTOR AND EMITTER CAPACITANCE vs. REVERSE VOLTAGE 10 50 70 NOISE FIGURE vs. COLLECTOR CURRENT 7 2 VCE = 10 V f = 1.85 GHz f = 1.0 MHz 6 NF−Noise Figure−dB Cob−Collector Capacitance−pF Cib−Emitter Capacitance−pF 5 IC−Collector Current−mA Cob 1 Cib 0.5 5 4 3 2 1 0.3 0 0.5 1 2 5 10 20 30 VCB−Collector to Base Voltage−V VEB−Emitter to Base Voltage−V 6 0 0.5 1 5 10 IC−Collector Current−mA 50 70 2SC2148, 2SC2149 [MEMO] 7 2SC2148, 2SC2149 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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