NEC 2SC2351-F

DATA SHEET
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• NF
1.5 dB
TYP.
@ f = 1.0 GHz
• MAG
14 dB
TYP.
@ f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
+0.1
0.4 −0.05
2.8±0.2
+0.1
1.5
0.65 −0.15
12
V
Emitter to Base Voltage
VEBO
3.0
V
IC
70
mA
Total Power Dissipation
Junction Temperature
PT
Tj
250
150
mW
°C
Storage Temperature
Tstg
−65 to +150
°C
1
3
Marking
0.3
Collector Current
2
+0.1
VCEO
0.4 −0.05
Collector to Emitter Voltage
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0 to 0.1
1.1 to 1.4
+0.1
V
0.16 −0.06
25
0.95
VCBO
0.95
Collector to Base Voltage
2.9±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.1
µA
VCB = 15 V, IE = 0
Emitter Cutoff Current
IEBO
0.1
µA
VEB = 2.0 V, IC = 0
DC Current Gain
hFE
Gain Bandwidth Product
40
fT
4.5
Output Capacitance
Cob
0.75
Insertion Power Gain
S21e
2
Noise Figure
Maximum Available Gain
200
9
GHz
1.0
11
NF
1.5
MAG
14
VCE = 10 V, IC = 20 mA
3.0
VCE = 10 V, IC = 20 mA
pF
VCB = 10 V, IE = 0, f = 1.0 MHz
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
dB
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
dB
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
E/P *
F/Q *
Marking
R2
R3
hFE
40 to 120
100 to 200
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
* Old Specification / New Specification
©
1984
2SC2351
TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
70
VCE = 10 V
VCE = 10 V
50
IC-Collector Current-mA
100
hFE-DC Current Gain
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
30
20
10
5
2
20
1
10
0.5
7
1
2
5
10
20
0.5
0.5
50 70
0.6
0.7
0.8
IC-Collector Current-mA
VBE-Base to Emitter Voltage-V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
VCE = 10 V
f = 1.0 GHz
|S21e|2-Insertion Gain-dB
fT-Gain Bandwidth Product-GHz
5
2
1
0.5
10
5
0.2
0.1
0.5
2
1
2
5
10
20
0
0.5
50 70
1
2
5
10
20
IC-Collector Current-mA
IC-Collector Current-mA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NOISE FIGURE.
COLLECTOR CURRENT
7
NF-Noise Figure-dB
6
1
0.5
50 70
VCE = 10 V
f = 1.0 GHz
f = 1.0 MHz
Cob-Output Capacitance pF
0.9
5
4
3
2
1
0.3
0
0.5
1
2
5
10
VCB-Collector to Base Voltage-V
2
20
30
0
0.5
1
2
5
10
20
IC-Collector Current-mA
50 70
2SC2351
NF, Ga vs. COLLECTOR CURRENT
NF-Noise Figure-dB
10
5
Ga
4
3
5
NF
2
Ga-Associated Gain-dB
VCE = 10 V
f = 1 GHz
6
1
0
1
3
5
7 10
30
0
IC-Collector Current-mA
3
2SC2351
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