DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946(1) NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC converters and switching regulators. There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 330 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 2.0 A IC(pulse)* 4.0 A IB(DC) 1.0 A Total power dissipation PT (Tc = 25°C) 15 W Total power dissipation PT (Ta = 25°C) 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16135EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC2885, 2946, 2946(1) ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Collector to emitter voltage VCEO(SUS) IC = 1.0 A, IB = 0.1 A, L = 500 µH* 200 V Collector to emitter voltage VCEX(SUS) IC = 1.0 A, IB1 = −IB2 = 0.1 A* Ta = 125°C, L = 180 µH, clamped 200 V Collector cutoff current ICBO VCB = 250 V, IE = 0 10 µA Collector cutoff current ICEX1 VCE = 250 V, VBE(OFF) = −1.5 V 10 µA Collector cutoff current ICEX2 VCE = 250 V, VBE(OFF) = −1.5 V, Ta = 125°C 1.0 mA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 1.0 µA DC current gain hFE1 VCE = 5.0 V, IC = 0.1 A* 20 hFE2 VCE = 5.0 V, IC = 1.0 A* 15 60 160 Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 0.1 A* 1.0 V Base saturation voltage VBE(sat) IC = 1.0 A, IB = 0.1 A* 1.5 V IC = 1.0 A, RL = 100 Ω IB1 = −IB2 = 0.1 A, VCC ≅ 100 V 1.0 µs 2.0 µs 1.0 µs Turn-on time ton Storage time tstg Refer to the test circuit. Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking N M L K hFE1 20 to 50 30 to 70 50 to 100 80 to 160 PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base 2. Collector 3. Emitter 4. Collector (fin) 2 Unit Data Sheet D16135EJ2V0DS 2SC2885, 2946, 2946(1) Without heatsink Collector Current IC (mA) ??? With infinite heatsink Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Ambient Temperature Ta (°C) IC Derating dT (%) Transient Thermal Resistance Rth(j-a) (°C/W) Collector to Emitter Voltage VCE (V) Case Temperature TC (°C) Pulse Width PW (ms) DC Current Gain hFE Collector Current IC (A) Pulse test Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Data Sheet D16135EJ2V0DS 3 3XOVHWHVW 3XOVHWHVW 7XUQ2Q7LPHWRQµV 6WRUDJH7LPHWVWJµV )DOO7LPHWIµV %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 2SC2885, 2946, 2946(1) &ROOHFWRU&XUUHQW,&P$ &ROOHFWRU&XUUHQW,&P$ 6:,7&+,1*7,0(WRQWVWJWI7(67&,5&8,7 %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP 4 Data Sheet D16135EJ2V0DS 2SC2885, 2946, 2946(1) [MEMO] Data Sheet D16135EJ2V0DS 5 2SC2885, 2946, 2946(1) • The information in this document is current as of July, 2001. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4