DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC2954 is an NPN epitaxial silicon transistor disigned for PACKAGE DIMENSIONS low noise wide band amplifier and buffer amplifier of OSC, for VHF (Unit: mm) and CATV bnad. 4.5±0.1 FEATURES 1.5±0.1 1.6±0.2 NF: 2.3 dB, 2.4 dB 0.8 MIN. S21e: 20 dB, 12.5 dB • Large PT in Small Package. PT: 2 W with 16 cm 0.7 mm Ceramic Substrate. 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 18 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 150 mA Total Power Dissipation PT * 2.0 W Termal Resistance C/W Tj 150 C Tstg 65 to +150 C * With 16 cm2 0.7 mm Junction Temperature Storage Temperature Rth(j-a)* C E B 0.42 ±0.06 4.0±0.25 f = 200 MHz, 500 MHz 2.5±0.1 • Low Noise and High Gain. 0.42±0.06 1.5 0.47 ±0.06 3.0 −0.03 0.41 +0.05 Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) 62.5 Ceramic Substrate Document No. P10405EJ3V0DS00 (3rd edition) (Previous No. TC-1458A) Date Published March 1997 N Printed in Japan © 1994 2SC2954 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. Collector Cutoff Current ICBO VCB = 10 V, IE = 0 DC Current Gain hFE VCE = 10 V, IC = 50 mA *1 30 100 VCE = 10 V, IC = 50 mA 3.0 4.0 Gain Bandwidth Product fT Feedback Capacitance Cre Insertion Power Gain VCB = 10 V, Emitter Grounded, f = 1.0 MHz 1.1 S21e2 VCE = 10 V, IC = 50 mA, f = 500 MHz RG = 50 NF VCE = 10 V, IC = 30 mA, f = 500 MHz RG = 50 Noise Figure *1 Pulse Measurement PW 350 s, duty cycle 10 MAX. UNIT 100 nA 200 GHz 1.8 pF 12.5 2.4 dB 4.0 dB 2 %/Pulsed TYPICAL CHARACTERISTICS (TA = 25 C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 200 2.0 IC-Collector Current-mA PT-Total Power Dissipation-W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ceramic Substrate 16 cm2 × 0.7 mm Rth(j-a) 62.5 °C/W 1.0 VCE = 10 V 100 Free Air Rth(j-a) 312.5 °C/W 0 0 200 50 100 Ta-Ambient Temperature-°C 150 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0.5 VBE-Base to Emitter Voltage-V 1.0 DC CURRENT GAIN vs. COLLECTOR CURRENT 2 mA 100 hFE-DC Current Gain IC-Collector Current-mA VCE = 10 V 1.5 mA 1 mA IB = 500 µ A 200 100 70 50 30 0 2 0 2 4 6 8 VCE-Collector to Emitter Voltage-V 20 10 10 1 10 100 200 IC-Collector Current-mA 2SC2954 FEED-BACK AND OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 10 10 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 10 V 5.0 fT-Gain Bandwidth Product-MHz Cre-Feed-back Capacitance-pF Cob-Output Capacitance-pF f = 1.0 MHz 3.0 Cob (Emitter Open) 2.0 1.0 Cve (Emitter Graund) 0.5 0.3 0.2 0.1 0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 0.5 1.0 5.0 10 30 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT 30 5.0 30 5.0 10 50 100 IC-Collector Current-mA INSERTION GAIN vs. FREQYENCY VCE = 10 V f = 100 MHz 25 20 f = 200 MHz |S21e|2-Insertion Gain-dB |S21e|2-Insertion Gain-dB 25 VCE = 10 V IC = 50 mA 15 f = 500 MHz 10 f = 1 GHz 5 0 5 10 20 30 50 IC-Collector Current-mA 20 15 10 100 5 0 0.1 0.2 0.3 0.5 f-Frequency-GHz 0.7 1.0 3 2SC2954 18 9 6 VCE = 10 V f = 500 MHz RG = 50 Ω 5 NF-Noise Figure-dB Ga-Associated Gain-dB 15 12 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 Ga 4 3 2 3 1 0 0 NF 1 2 3 5 7 10 20 IC-Collector Current-mA 30 50 70 100 2SC2945 IM2, IM3 vs. IC NOISE FIGURE,vs. FREQUENCY 6 NF-Noise Figure-dB 5 IM2 IM3 (dB) −80 VCE = 10 V IC = 30 mA RG = 50 Ω at VCE = 10 V V0 = 110 dBµV/75 Ω Rg = Re = 75 Ω IM2 f = 90 + 100 MHz IM3 f = 2 × 200 − 190 MHz −70 4 −60 3 IM3 −50 2 IM2 −40 1 0 0.1 −30 0.2 0.3 0.5 f-Frequency-GHz 1.0 −20 20 30 40 IC (mA) 4 50 60 70 2SC2954 S11e, S22e-FREQUENCY 1.4 1.2 1.0 0.9 1.6 0.6 0.1 0.3 7 3 1.8 2.0 T EN 0 ( –Z–+–J–XTANCE CO ) MPO 0.4 0.2 N 0. 5 0. 18 32 0. 50 4 0. 0 0.3 0 3. C 0.6 1 0.2 9 0.2 30 O 0.8 4.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0 1. 0 1. 6.0 0.2 0.8 0.6 10 20 10 5.0 4.0 50 0.27 0.23 0.6 1. 0 5.0 1.0 E NC TA X AC −J––O– RE –Z ) 4.0 ( 0.8 0 0.6 E IV AT 3. 0 −4 NE G 0.4 5 0. 0. 31 19 2.0 1.8 1.6 0.2 4 0.3 6 0.1 1.4 0.35 0.15 −70 1.2 0 0.36 0.14 −80 1.0 3 0.3 7 −6 0.9 0.1 0.7 0. 0.8 32 18 0. 0 0.38 0.39 0.12 0.11 −100 −90 0.37 0.13 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 −1 0.6 −5 0. 0. 2 9 0.2 1 0.3 −3 0.2 0 0 0 4 0. 0.2 8 0.2 2 −20 S22e 8 0. 0.2 0.26 0.24 1.0 GHz 0.1 GHz 0.4 −10 0.1 GHz 3.0 1.8 2.0 1.6 1.4 0.7 0.8 0.6 0.5 0.4 1.2 ) 10 0.1 0.3 0.2 ( S11e 50 0.25 0.25 0.2 0.4 20 REACTANCE COMPONENT R –––– 0.2 ZO 0 0.9 1.0 1 GHz 20 0.3 WAVELE N 600 40 GTHS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF FCIENT 0.4 0.0TOR 3 HS TO LE OF REF 6 I 7 .0 N 4 DEG 0 G T 4 N G 0. REE EN 160 A 0.4 L 0 4 S .0WAVE − 6 0.0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 P . OS 0.1 14 0.4 6 0 06 40 ENT ITIV ON 0 ER 4 MP 0. −1 EA CO 0.1 6 0.3 4 70 0.2 0.1 0.3 0.15 0.35 19 0. 31 0. 07 43 0. 0 13 0. 0.14 0.36 80 90 0.7 8 0.0 2 0.4 20 1 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.8 9 0.0 1 0.4 CONDITION VCE = 10 V IC = 50 mA f = 0.1 to 1.0 GHz (STEP. 100 MHz) S12e-FREQUENCY S21e-FREQUENCY 90° 90° 120° 120° 60° 0.1 GHz 60° 0.1 GHz 0.7 0.2 150° 30° 0.3 0.5 0.7 1.0 180° 0° −30° −150° −60° −90° CONDITION VCE = 10 V IC = 50 mA 30° 0.5 0.3 0.2 0.1 5.0 10 15 20 −120° 150° 180° 0.05 0.1 0.15 0.20 0° −30° −150° −120° −60° −90° CONDITION VCE = 10 V IC = 50 mA 5 2SC2954 [MEMO] 6 2SC2954 [MEMO] 7 2SC2954 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5