DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS (Units: mm) The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. +0.1 0.4 −0.05 2.8±0.2 FEATURES +0.1 1.5 0.65 −0.15 3 +0.1 1 0.4 −0.05 MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.95 • High Power Gain 2 0.95 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 2.9±0.2 • Low Noise and High Gain ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg to +150 C 65 Marking +0.1 V 0.16 −0.06 V 12 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 20 VCEO 0.3 VCBO Collector to Emitter Voltage 1.1 to 1.4 Collector to Base Voltage ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1.0 V, IC = 0 DC Current Gain hFE* 50 120 Gain Bandwidth Product fT 7 Feed-Back Capacitance Cre** 0.55 S21e2 11.5 NF 1.1 Insertion Power Gain Noise Figure * MIN. 300 VCE = 10 V, IC = 20 mA GHz 1.0 2.0 VCE = 10 V, IC = 20 mA pF VCB = 10 V, IE = 0, f = 1.0 MHz dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Pulse Measurement PW 350 s, Duty Cycle 2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification Class R23/Q * R24/R * R25/S * Marking R23 R24 R25 hFE 50 to 100 80 to 160 125 to 250 Document No. P10356EJ5V1DS00 (5th edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification © 1985 2SC3356 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 50 0 100 f = 1.0 MHz 1 0.5 0.3 0 150 0.5 1 2 5 10 TA-Ambient Temperature-°C VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 200 20 30 15 VCE = 10 V |S21e|2-Insertion Gain-dB hFE-DC Current Gain Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW 2 Free Air 100 50 20 10 5 VCE = 10 V f = 1.0 GHz 10 0.5 1 5 10 0 0.5 50 IC-Collector Current-mA 1 5 10 50 70 IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gmax 5.0 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-MHz 10 3.0 2.0 1.0 0.5 0.3 |S21e|2 10 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 IC-Collector Current-mA 2 20 30 0 VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 f-Frequency-GHz 2 2SC3356 NOISE FIGURE vs. COLLECTOR CURRENT |S21e|2-Insertion Gain-dB 6 NF-Noise Figure-dB 18 VCE = 10 V f = 1.0 GHz 5 4 3 2 15 12 6 3 NF-Noise Figure-dB 7 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 |S21e|2 3 2 NF 1 1 0 0.5 1 5 10 50 70 0 0 IC-Collector Current-mA 2 4 6 8 10 VCE-Collector to Emitter Voltage-V S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50 f (MHz) S11 200 0.651 400 0.467 600 0.391 800 0.360 1000 1200 S11 69.3 S21 S21 S12 S12 S22 10.616 129.3 0.051 59.2 0.735 6.856 104.4 0.071 54.4 0.550 4.852 90.9 0.086 56.0 0.468 3.802 81.2 0.101 59.1 0.426 0.360 113.3 139.3 159.2 176.9 3.098 72.9 0.118 61.0 0.397 0.361 172.7 2.646 67.3 0.137 63.5 0.373 1400 0.381 160.3 2.298 59.3 0.157 63.3 0.360 1600 0.398 152.2 2.071 55.2 0.180 64.1 0.337 1800 0.423 143.3 1.836 49.0 0.203 63.7 0.320 2000 0.445 137.6 1.689 46.2 0.220 64.7 0.302 S22 28.1 34.1 33.9 33.6 35.7 38.3 43.0 45.9 52.3 52.2 VCE = 10 V, IC = 5 mA, ZO = 50 S11 200 0.339 400 0.258 600 0.243 S11 107.0 147.3 167.7 f (MHz) S21 S21 S12 S12 S22 16.516 108.7 0.035 66.1 0.459 8.928 92.1 0.060 71.0 0.343 6.022 83.0 0.085 71.9 0.305 800 0.242 177.0 4.633 76.2 0.109 72.2 0.284 1000 0.260 164.5 3.744 69.9 0.136 70.4 0.266 1200 0.269 157.6 3.193 65.7 0.160 69.9 0.246 1400 0.294 148.7 2.750 58.8 0.187 66.7 0.233 1600 0.314 143.1 2.479 55.5 0.212 65.2 0.208 1800 0.343 136.5 2.185 50.1 0.238 62.4 0.190 2000 0.367 131.4 2.016 47.8 0.254 61.6 0.173 S22 36.6 32.9 29.9 29.4 31.7 35.0 40.4 43.6 50.5 48.3 3 2SC3356 S-PARAMETER 0.1 6 0.3 4 1.6 5 0. 2.0 50 0.4 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 6.0 0 1. 2.0 GHz 0.6 10 0.4 0.1 10 0 1. 5.0 1.0 E NC TA X AC −J––O– RE –Z ) 4.0 ( 0.8 0.6 E IV AT 0 3. −4 0 NE G 0.4 2.0 1.8 1.6 1.4 0 4 0.3 6 0.1 0.2 0.35 0.15 −70 1.2 3 0.3 7 0.1 −6 0.36 0.14 −80 1.0 18 0.9 32 0.8 0. 0.7 0 0.6 −5 0. 0. 5 0. 0. 31 19 0.38 0.39 0.12 0.11 −100 −90 0.37 0.13 0 −11 0.40 0.10 0. 4 0. 3 07 30 −1 0.4 1 0.0 0.4 9 0 2 −1 .08 20 S21e-FREQUENCY 0.2 8 0.2 2 −20 0.2 GHz IC = 5 mA 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 4 0. 0.27 0.23 IC = 20 mA −10 IC = 5 mA 0.2 GHz 8 0. 0.26 0.24 S22e 0.6 0.2 CONDITION 50 0.4 0.1 0.3 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 0.7 0.8 0.6 0.5 0.4 0.3 1.2 0.2 GHz IC = 20 mA 50 0.9 1.0 ) 20 ( 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO 0 0.2 20 0.2 0.3 0.2 0.8 S11e 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO N T EN 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.4 1.2 70 0 0.2 0 0.3 WAVELE NG 1.0 0.6 12 0.15 0.35 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0 0.14 0.36 80 90 19 0. 31 0. 07 43 0. 0 13 0. 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.9 8 0.0 2 0.4 9 0.0 1 0.4 0.7 VCE = 10 V 200 MHz Step 0.8 S11e, S22e-FREQUENCY CONDITION S12e-FREQUENCY VCE = 10 V IC = 20 mA CONDITION 90° 90° 120° 2.0 GHz 60° 120° 60° VCE = 10 V IC = 20 mA 0.2 GHz S12e 150° 30° S21e 30° 150° 0.2 GHz 180° 2.0 GHz 5 10 15 −150° 0° 180° −30° −60° −120° −90° 4 20 0.05 0.1 0.15 −150° 0° 0.2 0.25 −30° −60° −120° −90° 2SC3356 [MEMO] 5 2SC3356 [MEMO] 6 2SC3356 [MEMO] 7 2SC3356 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. 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