DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters (inches) low-noise and small signal amplifiers from VHF band to UHF band. Low- 5.2 MAX. (0.204 MAX.) noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride proprietary new fabrication technique. FEATURES @f = 1.0 GHz • Ga 12 dB TYP. @f = 1.0 GHz 0.5 (0.02) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 65 mA Total Power Dissipation PT 600 mW 150 C to +150 C Junction Temperature Tj Storage Temperature Tstg 65 2.54 (0.1) 1.27 (0.05) 1 2 1. Base 2. Emitter 3. Collector 4.2 MAX. (0.165 MAX.) 1.2 dB TYP. 1.77 MAX. (0.069 MAX.) • NF 14 MIN. (0.551 MIN.) 5.5 MAX. (0.216 MAX.) passivated base surface process (DNP process) which is an NEC 3 EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product fT Feed-Back Capacitance Cre Maximum Available Gain Noise Figure 100 250 8 0.4 VCE = 8 V, IC = 20 mA GHz VCB = 10 V, IE = 0, f = 1.0 MHz 11 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz MAG 13 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz NF 1.2 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz 2 9 0.9 VCE = 8 V, IC = 20 mA pF S21e Insertion Power Gain 50 2.5 hFE Classification Class K Marking K hFE 50 to 250 Document No. P10359EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan © 1984 2SC3582 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT-Total Power Dissipation-mW 3 f = 1.0 MHz Free air Cre-Feed-back Capacitance-pF 1000 500 50 0 100 2 1 0.7 0.5 0.3 0.2 150 TA-Ambient Temperature-°C 0.1 1 2 3 5 7 10 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 200 30 15 VCE = 8 V |S21e|2-Insertion Gain-dB 100 hFE-DC Current Gain 20 50 20 10 5 VCE = 8 V f = 1.0 GHz 10 0.5 1 5 10 0 0.5 50 IC-Collector Current-mA 50 70 20 VCE = 8 V VCE = 8 V IC = 20 mA 20 MAG-Maximum Available Gain-dB |S21e|2-Insetion Gain -dB fT-Gain Bandwidth Product-GHz 10 INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY 30 2 5 IC-Collector Current-mA GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT 10 7 5 3 2 1 1 1 2 3 5 7 10 IC-Collector Current-mA 20 30 MAG 16 12 |S21e|2 8 4 0 0.1 0.2 0.3 0.5 70. 1.0 f-Frequency-GHz 2.0 3.0 2SC3582 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 8 V f = 1.0 GHz NF-Noise Figure-dB 6 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 f (MHz) S11 200 0.668 400 0.425 600 0.294 800 0.214 1000 0.167 1200 0.132 1400 0.098 1600 0.073 1800 0.071 2000 0.070 f (MHz) S11 S11 45.8 61.5 73.2 79.4 79.5 79.8 75.2 72.0 63.7 60.6 VCE = 8.0 V, IC = 20 mA, ZO = 50 200 0.333 400 0.195 600 0.158 800 0.156 1000 0.146 1200 0.143 1400 0.134 1600 0.132 1800 0.131 2000 0.130 S11 51.4 49.2 44.3 41.0 35.8 30.7 25.8 22.3 20.0 17.8 S21 S21 S12 S12 S22 11.385 128.9 0.049 83.5 0.833 7.014 103.7 0.063 76.3 0.681 5.189 88.6 0.088 68.5 0.620 3.967 75.4 0.103 64.5 0.580 3.485 64.7 0.123 60.8 0.561 2.831 57.0 0.147 55.9 0.549 2.604 48.5 0.175 50.7 0.561 2.182 39.1 0.192 47.9 0.573 2.135 31.0 0.215 44.2 0.595 1.879 21.6 0.221 38.0 0.617 S21 S21 S12 S12 S22 17.197 107.7 0.053 97.5 0.638 8.729 89.7 0.064 90.1 0.585 6.149 78.8 0.078 80.3 0.573 4.603 68.7 0.111 70.0 0.549 3.997 60.4 0.136 64.2 0.537 3.205 54.1 0.168 58.1 0.524 2.939 46.7 0.185 53.2 0.524 2.463 38.1 0.218 47.3 0.524 2.396 30.7 0.234 41.3 0.557 2.107 22.1 0.238 36.5 0.579 S22 26.9 31.1 36.0 40.8 46.3 53.4 60.3 69.1 71.8 78.0 S22 29.7 31.8 35.0 38.2 42.4 57.1 55.4 62.0 68.5 74.8 3 2SC3582 S-PARAMETER VCE = 8 V 200 MHz Step 0.1 6 0.3 4 70 1.6 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.4 1.2 1.0 0.9 0.8 0.6 12 0.15 0.35 T EN 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 0.4 0.1 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 0.9 1.0 0.7 0.8 0.6 0.5 0.4 1.2 50 0 1. ) 1.0 ( 0.8 0 E NC TA X AC −J––O– RE –Z 0.2 GHz IC = 5 mA 1.4 GHz 0.6 E IV AT 3. 0 −4 4 NE G 0. 4.0 S11e 0.4 2.0 1.8 3 0.3 7 4 0.3 6 0.1 0.2 1.6 0 1.4 −6 0.35 0.15 −70 1.2 0.1 0.36 0.14 −80 1.0 18 0.9 32 −90 0.37 0.13 0.38 0.12 0.8 0. 0.7 0 0.39 0.11 −100 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 −1 0.6 −5 0. 0. 5 0. 0. 31 19 VCE = 8 V 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 S21e-FREQUENCY CONDITION S22e 0.2 GHz S12e-FREQUENCY 90° CONDITION VCE = 8 V 90° 120° 120° 60° 0.2 GHz 0.2 8 0.2 2 −20 0. 0.27 0.23 IC = 20 mA 8 IC = 5 mA 0.2 −10 0.6 0.26 0.24 IC = 20 mA 0.4 5.0 0.3 0.2 ) 0.25 0.25 ( 50 0 0.2 20 1.4 GHz REACTANCE COMPONENT R –––– 0.2 ZO 20 WAVELE NG 0.2 0.8 10 0.1 0.3 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO 0.4 0 0.2 0 0.3 N 0. 5 2.0 50 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0 0.14 0.36 80 90 19 0. 31 0. 07 43 0. 0 13 0. 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.7 8 0.0 2 0.4 9 0.0 1 0.4 10 S11e, S22e-FREQUENCY CONDITION 60° 2.0 GHz IC = 20 mA IC = 20 mA 150° 30° 150° 30° IC = 5 mA IC = 5 mA S12e 180° 0 0.2 GHz 4 8 0.2 GHz 12 16 0° 180° 20 0 0° 0.05 0.10 0.15 0.20 0.25 S21e −150° −30° −60° −120° −90° 4 −150° −30° −60° −120° −90° 2SC3582 [MEMO] 5 2SC3582 [MEMO] 6 2SC3582 [MEMO] 7 2SC3582 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Anti-radioactive design is not implemented in this product. M4 96. 5