DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3841 is an NPN silicon epitaxial transistor intended for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. It is designed for use in small type equipments especially recommendd for Hybried Integrated Circuit and other applications. PACKAGE DIMENSIONS (Units: mm) 1 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) V V V mA PT 200 mW Tj Tstg 55 150 to +150 +0.1 25 12 3 30 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0 to 0.1 VCBO VCEO VEBO IC 0.16 −0.06 0.3 Marking 1.1 to 1.4 Maximum Voltages and Current Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Maximum Power Dissipation Total Power Dissipation Maximum Power Temperutures Junction Temperature Storage Temperature +0.1 2 0.65 −0.15 0.4 −0.05 • High Gain Bandwidth Procuct; fT = 4.0 GHz TYP. • Low Collector to Base Time Constant; CC rb’b = 4.0 ps TYP. • Low Output Capacitance; Cob = 1.5 pF MAX. 0.95 FEATURES +0.1 1.5 0.95 2.9±0.2 +0.1 0.4 −0.05 2.8±0.2 C C ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL Collector Cutoff Current ICBO DC Current Gain hFE Collector Saturation Voltage 40 VCE(sat) Gain Bandwidth Product fT Output Capacitance Collector to Base Time Constatnt MIN. 2.5 TYP. MAX. UNIT 0.1 A 100 200 0.09 0.5 4.0 TEST CONDITIONS VCB = 10 V, IE = 0 VCE = 10 V, IC = 5.0 mA V IC = 10 mA, IB = 1.0 mA GHz VCE = 10 V, IE = 5.0 mA Cob 0.85 1.5 pF VCB = 10 V, IE = 0, f = 1.0 MHz CC rb’b 4.0 10.0 ps VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz hFE Classification Class T62/P * T63/Q * T64/R * Marking T62 T63 T64 hFE 40 to 80 60 to 120 100 to 200 Document No. P10362EJ1V1DS00 (1st edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification © 1986 2SC3841 TYPICAL CHARACTERISTICS (TA = 25 C) DC CURRENT GAIN vs. COLLECTOR CURRENT 70 VCE = 10 V 200 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V 50 IC-Collector Current-mA hFE-DC Current Gain 100 50 20 10 5 0.05 0.1 0.2 0.5 1 2 5 10 20 40 20 10 5 2 1 IC-Collector Current-mA 0.5 0.6 0.7 0.8 0.9 VBE-Base to Emitter Voltage-V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 7 15 VCE = 10 V |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-GHz 5 2 1 0.5 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz 10 5 0.2 0.1 0.5 1 2 5 10 20 0 0.5 40 1 IC-Collector Current-mA 3 2 1 2 5 10 20 VCB-Collector to Base Voltage-V 2 CC.rb'b-Collector to Base Time Constant-ps Cob-Output Capacitance pF f = 1.0 MHz 1 5 10 20 40 IC-Collector Current-mA OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 2 CC.rb'b vs. COLLECTOR CURRENT VCE = 10 V IE = −50 mA f = 39.1 MHz 10 8 6 4 2 0 0.5 1 2 5 10 IC-Collector Current-mA 20 40 2SC3841 S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50 S11 50 1.047 3 14.240 S21 178 0.003 42 1.012 3 100 0.944 13.693 164 0.026 81 0.989 200 0.750 10.802 137 0.058 66 0.759 300 0.562 18 56 84 8.270 118 0.078 59 0.582 400 0.468 6.449 105 0.091 58 0.484 500 0.394 5.399 97 0.106 58 0.417 600 0.372 4.421 89 0.120 59 0.343 700 0.359 3.824 83 0.133 59 0.309 800 0.343 3.388 77 0.146 58 0.288 10 30 39 40 45 44 48 53 54 61 57 61 f (MHz) S11 S21 S12 S12 S22 900 0.339 106 123 138 150 164 172 3.020 73 0.158 59 0.292 1000 0.320 178 2.692 67 0.172 59 0.279 1100 0.339 170 2.483 64 0.188 59 0.279 1200 0.351 168 2.291 61 0.204 59 0.279 S22 3 2SC3841 S-PARAMETER CONDITION VCE = 10 V, IC = 5 mA, ZO = 50 Ω 1.6 0.6 2.0 5 0. 0.4 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 0.1 0.3 0.2 ) 50 20 0.1 GHz 10 0.27 0.23 0 0.2 GHz 1. 5.0 1.0 0.8 0 E NC TA X AC −J––O– RE –Z ) 4.0 ( S11 0.6 E IV AT 3. −4 0 0.2 GHz NE G 0.4 2.0 1.8 1.6 1.4 −70 0.35 0.15 1.2 4 0.3 6 0.1 0.2 0.36 0.14 −80 1.0 3 0.3 7 0 0.9 −6 −90 0.37 0.13 0.38 0.12 0.8 0.1 0.7 32 18 0. 0. 0 0.6 −5 0. 5 0. 0. 31 19 0.39 0.11 −100 0.40 0.10 −11 0 0. 4 0. 3 07 30 −1 0.4 1 0.0 0.4 9 0.0 2 20 8 −1 S21e-FREQUENCY CONDITION VCE = 10 V, IC = 5 mA 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 4 0. 0.1 GHz 0.2 8 0.2 2 −20 1.2 GHz 8 0. −10 0.6 0.26 0.24 S22 0.4 0.2 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO ( 50 0 0.2 0.0520 GHz 0.4 WAVELE NG 0.2 0.8 10 1.2 GHz 0.1 0.3 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO N 50 0 0.2 0 0.3 T EN 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.4 1.2 1.0 0.1 6 0.3 4 70 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0.15 0.35 19 0. 31 0. 07 0. 3 4 0. 0 13 0.14 0.36 80 90 0.7 8 0.0 2 0.4 20 1 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.8 9 0.0 1 0.4 0.9 S11e, S22e-FREQUENCY S12e-FREQUENCY CONDITION VCE = 10 V, IC = 5 mA 90° 90° 120° 120° 60° 60° S12 S21 150° 30° 1.2 GHz 30° 150° 0.2 GHz 0.1 GHz 0.2 GHz 1.2 GHz 180° 4 0.05 GHz 0.1 GHz 8 12 −150° 0° 180° 20 −30° −60° −120° −90° 4 16 0.05 GHz 0.05 0.11 0.15 −150° 0° 0.2 0.25 −30° −60° −120° −90° 2SC3841 [MEMO] 5 2SC3841 [MEMO] 6 2SC3841 [MEMO] 7 2SC3841 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5