DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS (Units: mm) The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band. +0.2 2 +0.1 4 +0.1 +0.1 0.6 −0.05 1 • NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA • S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) V 12 V VEBO 3.0 V Collector Current IC 70 mA Total Power Dissipation Junction Temperature PT Tj 200 150 mW °C Storage Temperature Tstg −65 to +150 °C +0.1 VCEO Emitter to Base Voltage 5° 0.16 −0.06 Collector to Emitter Voltage 5° 5° 0 to 0.1 25 +0.2 VCBO 1.1−0.1 0.8 Collector to Base Voltage 0.4 −0.05 FEATURES (1.9) 2.9±0.2 (1.8) 0.85 0.95 3 +0.1 gain. 0.4 −0.05 2.8 −0.3 +0.2 1.5 −0.1 0.4 −0.05 It is contained in 4 pins mini-mold package which enables high-isolation 5° PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µA VCB = 15 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µA VEB = 2.0 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product 40 200 fT 6 Output Capacitance Cob 0.55 Insertion Power Gain S21e2 Noise Figure Maximum Available Gain 9.5 GHz 0.9 12 NF 1.5 MAG 14.5 VCE = 10 V, IC = 20 mA 3.0 VCE = 10 V, IC = 20 mA f = 1.0 GHz pF VCB = 10 V, IE = 0, f = 1.0 MHz dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz dB VCE = 10 V, IC = 5 mA, f = 1.0 GHz dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz hFE Classification Class R4/RD * R5/RE * Marking R4 R5 hFE 40 to 120 100 to 200 Document No. P10363EJ1V1DS00 (1st edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification © 1987 2SC4092 TYPICAL CHARACTERISTICS (TA = 25 °C) DC CURRENT GAIN vs. COLLECTOR CURRENT 200 70 VCE = 10 V VCE = 10 V 50 IC-Collector Current-mA 100 hFE-DC Current Gain COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 30 20 10 5 2 20 1 10 0.5 10 1 2 5 10 20 0.5 0.5 50 70 0.6 0.7 0.8 IC-Collector Current-mA VBE-Base to Emitter Voltage-V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 16 VCE = 10 V f = 1 GHz |S21e|2-Insertion Gain-dB fT-Gain Bandwidth Product-GHz VCE = 10 V 5 2 1 0.9 12 8 4 0.5 1 3 5 10 30 0 0.5 IC-Collector Current-mA 1 2 5 10 20 40 IC-Collector Current-mA FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NOISE FIGURE. COLLECTOR CURRENT 7 VCE = 10 V f = 1.2 GHz 6 2.0 NF-Noise Figure-dB Cre-Feed-back Capafitance-pF f = 1.0 MHz 1.0 0.5 4 3 2 1 0.2 0 0.5 0.1 1 2 5 10 VCB-Collector to Base Voltage-V 2 5 20 30 1 2 5 10 20 IC-Collector Current-mA 50 70 2SC4092 NF, Ga vs. COLLECTOR CURRENT 7 NF-Noise Figure-dB 6 Ga 5 10 4 3 5 2 NF Ga-Associated Gain-dB VCE = 10 V f = 1 GHz 1 0 0 1 3 5 7 10 30 IC-Collector Current-mA S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50 Ω S11 ∠ S11 100 0.780 −39.4 13.956 155.8 0.027 200 0.709 −73.6 11.808 130.8 0.058 400 0.567 −114.4 7.509 106.5 600 0.503 −143.3 5.678 800 0.486 −164.3 1000 0.488 1200 0.506 1400 S22 ∠ S22 62.9 0.905 −21.2 62.3 0.767 −36.3 0.081 42.1 0.542 −50.3 93.2 0.093 39.0 0.424 −56.2 4.155 80.6 0.104 36.8 0.353 −59.3 −179.5 3.499 72.3 0.117 37.2 0.301 −63.1 167.5 2.830 63.0 0.129 36.6 0.265 −66.1 0.520 159.9 2.588 55.3 0.144 35.9 0.246 −73.4 1600 0.528 149.8 2.188 48.5 0.155 37.5 0.217 −79.1 1800 0.533 141.8 2.092 41.7 0.173 35.7 0.209 −88.0 2000 0.556 134.9 1.794 36.0 0.181 36.1 0.192 −97.8 f (MHz) S21 ∠ S21 S12 ∠ S12 VCE = 10 V, IC = 5 mA, ZO = 50 Ω S11 ∠ S11 S21 ∠ S21 S12 ∠ S12 S22 ∠ S22 100 0.534 −82.1 25.861 136.3 0.021 34.8 0.717 −41.1 200 0.468 −121.0 17.231 110.2 0.033 60.5 0.481 −50.5 400 0.428 −157.0 9.440 92.4 0.051 50.1 0.297 −57.8 600 0.435 −176.6 6.738 83.4 0.069 57.2 0.230 −59.5 800 0.448 170.0 4.823 73.7 0.090 54.6 0.197 −60.9 1000 0.464 161.0 4.013 67.2 0.107 54.1 0.164 −66.3 1200 0.480 152.1 3.232 59.4 0.127 53.5 0.140 −70.7 1400 0.495 146.5 2.945 52.7 0.149 49.6 0.131 −80.5 1600 0.511 138.9 2.480 46.9 0.164 49.5 0.104 −91.4 1800 0.517 132.7 2.364 40.9 0.187 45.2 0.104 −103.7 2000 0.546 127.0 2.024 35.9 0.197 44.3 0.094 −120.7 f (MHz) 3 2SC4092 S-PARAMETER VCE = 10 V, f = 0.1, 0.2 to 2.0 GHz (Step 200 MHz) 0.1 6 0.3 4 70 1.6 2.0 5 0. 0.4 4 0. 0 3. 0.6 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 IC = 20 mA 10 0.4 0.1 10 8 1. 5.0 0 0.1 GHz 1.0 E NC TA X AC −J––O– RE –Z ) 4.0 0.1 GHz 0.8 0 ( 0.1 GHz 0.6 E IV AT 3. 0 −4 4 0. NE G 0.4 2.0 1.8 1.6 4 0.3 6 0.1 1.4 0 0.2 0.35 0.15 −70 1.2 3 0.3 7 0.1 −6 0.36 0.14 −80 1.0 18 0.9 32 0.8 0. 0.7 0 0.6 −5 0. 0. 5 0. 0. 31 19 0.38 0.39 0.12 0.11 −100 −90 0.37 0.13 0 −11 0.40 0.10 0. 4 0. 3 07 30 −1 0.4 1 0.0 0.4 9 0 2 −1 .08 20 CONDITION VCE = 10 V 0.2 8 0.2 2 −20 0. IC = 5 mA 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 S21e-FREQUENCY 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 0.3 20 0.27 0.23 S22e 0.6 0.2 −10 0.4 2 GHz 0.1 0.3 50 0.26 0.24 S11e IC = 20 mA ) 50 ( 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO 0 0.2 20 0.2 WAVELE NG 0.2 0.8 IC = 5 mA 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 2 GHz O 1 0.2 9 0.2 30 ( –Z–+–J–XTANCE CO ) MPO N 50 0 0.2 0 0.3 T EN 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.4 1.2 0.9 0.8 0.6 12 0.15 0.35 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0 0.14 0.36 80 90 19 0. 31 0. 07 43 0. 0 13 0. 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.7 8 0.0 2 0.4 9 0.0 1 0.4 1.0 S11e, S22e-FREQUENCY CONDITION S12e-FREQUENCY CONDITION VCE = 10 V 90° 90° 120° 0.1 GHz 120° 60° 0.2 GHz 60° 2 GHz IC = 20 mA IC = 20 mA 30° 150° 150° 30° S12e IC = 5 mA S21e 0.1 GHz IC = 5 mA 0.1 GHz 2 GHz 180° 0 4 8 12 −150° 20 0° 180° −30° −60° −120° −90° 4 16 0 0.04 0.08 0.12 0.16 0.2 −150° 0° −30° −60° −120° −90° 2SC4092 [MEMO] 5 2SC4092 [MEMO] 6 2SC4092 [MEMO] 7 2SC4092 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. 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