DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS (Units: mm) The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low- +0.2 • S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V 5° Collector Current IC 65 mA Total Power Dissipation PT 200 mW 150 C C Tj 65 to +150 +0.1 +0.1 V 0.16 −0.06 20 0 to 0.1 VCBO Tstg 5° 1.1−0.1 0.8 Collector to Base Voltage Junction Temperature 5° +0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Storage Temperature 4 +0.1 0.6 −0.05 • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA +0.1 1 FEATURES 0.4 −0.05 proprietary new fabrication technique. (1.9) 2.9±0.2 (1.8) 0.85 0.95 2 0.4 −0.05 This achieved by direct nitride passivated base surface process (DNP process) which is an NEC 3 +0.1 dynamic range and excellent linearity. 2.8 −0.3 +0.2 1.5 −0.1 0.4 −0.05 noise figure, high gain, and high current capability achieve a very wide 5° PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product fT Feed-Back Capacitance Cre Insertion Power Gain Maximum Available Gain 50 250 9 GHz VCB = 10 V, IE = 0, f = 1.0 MHz 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz MAG 17 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz NF 1.2 dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz Noise Figure 2 13 0.8 VCE = 8 V, IC = 20 mA, f = 1.0 GHz pF S21e 0.25 VCE = 8V, IC = 20 mA 2.0 hFE Classification Class R36/RCF * R37/RCG * R38/RCH * Marking R36 R37 R38 hFE 50 to 100 80 to 160 125 to 250 Document No. P10366EJ1V1DS00 (1st edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification © 1987 2SC4094 TYPICAL CHARACTERISTICS (TA = 25 C) 2.0 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Free air f = 1.0 GHz 200 Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 0 100 50 1.0 0.7 0.5 0.3 0.2 150 TA-Ambient Temperature-°C 0.1 1 2 3 5 7 10 20 VCB-Collector to Base Voltage-V DC CURRENT GAIN vs. COLLECTOR CURRENT 200 INSERTION GAIN vs. COLLECTOR CURRENT 20 VCE = 8 V VCE = 8 V f = 1.0 GHz |S21e|2-Insertion Gain-dB hFE-DC Current Gain 100 50 20 10 0.5 1 5 10 10 50 0 IC-Collector Current-mA 1 2 5 10 20 40 IC-Collector Current-mA 30 GAIN BANDWIDTH PRODUT vs. COLLECTOR CURRENT 30 MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY |S21e|2-Insertion Gain -dB MAG-Maximum Available Gain-dB VCE = 8 V fT-Gain Bandwidth Product-GHz 20 10 7 5 3 2 VCE = 8 V IC = 20 mA MAG 20 |S21e|2 10 0 0.1 1 2 3 5 7 10 IC-Collector Current-mA 2 20 30 0.2 0.5 f-Frequency-GHz 1.0 2.0 2SC4094 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 8 V f = 1.0 GHz NF-Noise Figure-dB 6 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 8.0 V, IC = 5.0 mA, ZO = 50 S11 S21 S21 S12 S12 S22 12.689 146.5 0.031 65.4 0.882 9.952 119.4 0.048 53.4 0.723 7.813 100.9 0.058 46.2 0.611 5.966 87.6 0.067 43.9 0.564 0.426 120.9 145.1 166.6 4.841 76.7 0.074 43.8 0.515 1200 0.416 178.2 4.065 68.8 0.083 43.5 0.488 1400 0.417 163.0 3.413 60.7 0.087 41.2 0.459 1600 0.430 152.1 3.035 54.1 0.098 42.8 0.443 1800 0.443 142.1 2.659 48.0 0.105 40.1 0.428 2000 0.458 136.5 2.482 44.3 0.114 43.0 0.414 S21 S21 S12 S12 S22 f (MHz) 200 0.774 400 0.631 600 0.523 800 0.460 1000 S11 47.8 88.8 S22 19.1 29.5 33.4 34.5 37.6 39.6 44.1 45.9 51.1 53.5 VCE = 8.0 V, IC = 20.0 mA, ZO = 50 f (MHz) S11 200 0.461 400 0.364 600 S11 89.8 23.331 121.6 0.021 60.7 0.665 13.501 99.2 0.033 61.2 0.511 0.338 135.8 163.4 9.535 86.4 0.046 61.5 0.448 800 0.330 177.9 7.083 77.5 0.056 62.1 0.430 1000 0.334 163.2 5.604 69.3 0.070 60.0 0.402 1200 0.344 153.9 4.722 63.5 0.084 60.4 0.385 1400 0.359 143.1 3.982 56.8 0.091 54.9 0.362 1600 0.383 136.1 3.517 51.1 0.104 54.5 0.350 1800 0.401 128.3 3.094 45.6 0.116 49.9 0.337 2000 0.419 124.7 2.882 42.7 0.127 50.8 0.323 S22 27.7 30.5 29.5 29.5 32.5 34.8 39.5 42.1 47.4 50.5 3 2SC4094 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 8 V, IC = 20/5 mA, freq. = 0.2 to 2 GHz (Step 200 MHz) 1.6 0.6 0.1 0.3 7 3 600 1.4 1.2 1.0 0.9 0.1 6 0.3 4 70 2.0 5 0. 0.4 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 2 GHz 1.0 0 1. 6.0 0.3 0.6 0.4 0.1 50 10 0.27 0.23 2 GHz 0.2 GHz 8 0 1. 5.0 IC = 5 mA 1.0 0 E NC TA X AC −J––O– RE –Z ) 4.0 ( 0.8 E IV AT 0.6 3. 0 −4 IC = 5 mA 0.4 NE G 2.0 18 0 −5 0. 5 0. 0. 31 19 1.8 1.6 1.4 0.35 0.15 −70 1.2 4 0.3 6 0.1 0.36 0.14 −80 1.0 3 0.3 7 0 0.9 −6 −90 0.37 0.13 0.38 0.12 0.8 0.1 0.7 32 0.39 0.11 −100 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 −1 0.6 0. 0.2 CONDITION VCE = 8 V IC = 20/5 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90° S12e-FREQUENCY CONDITION VCE = 8 V IC = 20/5 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90° 120° 60° IC = 20 mA 0. S21e-FREQUENCY 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 4 0.2 GHz 0.2 8 0.2 2 −20 0. 0. −10 S22e 0.6 0.26 0.24 IC = 20 mA 0.4 0.2 120° 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 0.7 0.8 0.6 0.5 0.4 0.3 0.9 1.0 ) 20 ( S11e 50 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO 0 0.2 20 0.2 WAVELE NG 0.2 0.8 10 IC = 20 mA 0.1 0.3 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO N 50 0 0.2 0 0.3 T EN 0. 18 32 0. 1.8 0.2 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0.15 0.35 19 0. 31 0. 07 0. 3 4 0. 0 13 0.14 0.36 80 90 0.7 8 0.0 2 0.4 20 1 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.8 9 0.0 1 0.4 60° 0.2 GHz S21e 150° 30° 150° S12e IC = 20 mA 2GHz 30° IC = 5 mA IC = 5 mA 180° 0 2GHz 4 0.2 GHz 8 12 −150° 20 0° 180° −30° −60° −120° −90° 4 16 0 0.04 0.08 0.12 0.16 0.2 −150° 0° −30° −60° −120° −90° 2SC4094 [MEMO] 5 2SC4094 [MEMO] 6 2SC4094 [MEMO] 7 2SC4094 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5