DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS (Units: mm) The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. +0.2 • NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA 5° +0.1 0.4 −0.05 5° Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 Storage Temperature Tstg C C 65 to +150 +0.1 5° 0 to 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 0.16 −0.06 1.1−0.1 0.8 +0.2 • S21e2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA 0.4 4 1 +0.1 0.6 −0.05 FEATURES +0.1 −0.05 This allows excellent associated gain and very wide dynamic range. (1.9) 2.9±0.2 (1.8) 0.85 0.95 2 process) which is an NEC proprietary new fabrication technique which 3 +0.1 2SC4095 employs direct nitiride passivated base surface process (DNP provides excellent noise figures at high current values. 2.8 −0.3 +0.2 1.5 −0.1 0.4 −0.05 2SC4095 features excellent power gain with very low-noise figures. 5° PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 1 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product fT Feed-Back Capacitance Cre Insertion Power Gain Maximum Available Gain 50 100 250 10 GHz VCB = 10 V, IE = 0, f = 1.0 MHz 9.5 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz MAG 12 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz NF 1.8 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz Noise Figure 2 7.5 0.8 VCE = 6 V, IC = 10 mA f = 1.0 GHz pF S21e 0.25 VCE = 6 V, IC = 10 mA 3.0 hFE Classification Class R46/RDF * R47/RDG * R48/RDH * Marking R46 R47 R48 hFE 50 to 100 80 to 160 125 to 250 Document No. P10367EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan * Old Specification / New Specification © 1987 2SC4095 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE f = 1.0 GHz 200 Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW 1.0 Free Air 100 50 0 100 0.5 1 0.2 0.1 150 0.06 1 TA-Ambient Temperature-°C 2 5 10 VCB-Collector to Base Voltage-V 20 INSERTION GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 18 200 VCE = 6 V VCE = 6 V 16 f = 1.0 GHz |S21e|2-Insertion Gain-dB hFE-DC Current Gain 100 50 20 14 12 10 f = 2.0 GHz 8 6 4 10 0.5 1 5 10 2 50 0 0.2 IC-Collector Current-mA 0.5 1 2 5 10 20 30 IC-Collector Current-mA GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY 30 30 VCE = 6 V fC = 10 mA 20 |S21e|2-Insetion Gain -dB MAG-Maximum Available Gain-dB fT-Gain Bandwidth Product-MHz VCE = 6 V 10 5 2 1 2 5 10 IC-Collector Current-mA 2 20 30 MAG 20 |S21e|2 10 0 0.1 0.2 0.5 1.0 f-Frequency-GHz 2.0 3.0 2SC4095 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 2.0 GHz NF-Noise Figure-dB 6 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE = 6.0 V, IC = 3.0 mA, ZO = 50 f (MHz) S11 200 0.870 400 0.747 600 0.628 800 0.516 1000 0.400 1200 0.327 1400 0.262 1600 0.231 1800 0.205 2000 0.196 S11 24.2 44.6 59.8 75.1 87.7 S21 S21 S12 S12 S22 9.193 155.6 0.031 53.6 0.946 7.780 136.6 0.040 66.2 0.876 7.058 122.1 0.064 54.7 0.816 5.675 109.4 0.066 56.0 0.743 5.180 99.6 0.090 49.4 0.689 103.4 118.7 135.5 155.3 170.6 4.269 89.8 0.084 47.9 0.654 3.950 81.7 0.106 48.5 0.604 3.406 74.0 0.105 42.1 0.581 3.290 66.4 0.126 46.4 0.548 2.867 60.8 0.124 40.9 0.529 S21 S21 S12 S12 S22 18.685 137.9 0.023 52.1 0.832 12.702 115.2 0.029 62.2 0.710 9.895 102.8 0.046 54.4 0.649 7.275 92.3 0.049 63.1 0.600 6.261 85.1 0.067 58.6 0.578 5.038 77.4 0.070 57.9 0.559 4.597 71.0 0.088 56.1 0.527 S22 12.8 20.7 26.4 30.9 33.0 35.7 37.7 41.5 43.9 47.1 VCE 6.0 V, IC = 10.0 mA, ZO = 50 f (MHz) S11 S11 43.5 68.7 83.7 200 0.671 400 0.458 600 0.319 800 .0239 1000 0.172 1200 0.149 1400 0.131 101.9 119.3 141.4 163.0 1600 0.132 179.6 3.927 64.8 0.094 54.0 0.514 1800 0.150 160.0 3.743 58.8 0.113 55.3 0.494 2000 0.163 150.1 3.233 54.5 0.115 50.0 0.478 S22 19.0 23.9 26.0 27.5 28.4 30.3 32.5 35.7 38.1 41.6 3 2SC4095 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 6 V, IC = 10/3 mA, freq. = 0.2 to 2 GHz (Step 200 MHz) 1.6 0.6 2.0 5 0. 0.4 4 0. 0 3. 0.6 1 0.2 9 0.2 30 O 0.8 4.0 1.0 0 1. 6.0 0.3 0.6 10 0.4 0.1 20 10 5.0 4.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 3.0 0.27 0.23 2 GHz 0 1. 5.0 IC = 3 mA 1.0 0.2 GHz E NC TA X AC −J––O– RE –Z ) 4.0 ( 0.8 0 0.6 E IV AT 3. 0 −4 NE G 0.4 2.0 1.8 1.6 1.4 0.35 0.15 −70 1.2 4 0.3 6 0.1 0.36 0.14 −80 1.0 3 0.3 7 0 0.9 −6 −90 0.37 0.13 0.38 0.12 0.8 0.1 0.2 0.7 32 0.39 0.11 −100 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 −1 0.6 0. 0. CONDITION VCE = 6 V IC = 10/3 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90° 120° 18 0 −5 0. 5 0. 0. 31 19 S21e-FREQUENCY 0 . 2 9 0.2 1 0.3 −3 0.2 0 0 0 4 0. 0.2 8 0.2 2 −20 IC = 3 mA 8 0. 0.2 0.3 0.2 GHz −10 0.6 0.26 0.24 0.4 10 0.3 1.8 2.0 S22e IC = 10 mA IC = 10 mA 50 ) 20 ( S11e 0.1 50 0.25 0.25 REACTANCE COMPONENT R –––– 0.2 ZO 0 0.2 20 0.2 WAVELE NG 0.2 0.8 2 GHz 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 ( –Z–+–J–XTANCE CO ) MPO N 50 0 0.2 0 0.3 T EN 0. 18 32 0. 1.8 0.2 0.1 0.3 7 3 600 1.4 1.2 1.0 0.9 0.1 6 0.3 4 70 40 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 HS TOWLAE OF REFLECTION COEFFCIENT IN 6 7 .0 DEG 0NGT ANG 4 0.4 REE 0 E 0.4 6 L 0 S .0W4AVE −1 6 0 .0 0 5 15 0.4 5 0.4 5 50 0 −1 .0 5 0 0. 0 44 POS . T 0.1 N 14 0.4 6 0 06 40 E ITIV ON 0 ER 4 MP 0. −1 EA CO C 0.15 0.35 19 0. 31 0. 07 0. 3 4 0. 0 13 0.14 0.36 80 90 0.7 8 0.0 2 0.4 20 1 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.8 9 0.0 1 0.4 S12e-FREQUENCY CONDITION VCE = 6 V IC = 10/3 mA freq. = 0.2 to 2 GHz (Step 200 MHz) 90° 120° 60° 60° IC = 10 mA IC = 10 mA 150° 0.2 GHz 30° 2GHz 150° S12e 30° S21e IC = 3 mA 180° 2GHz 0 4 8 12 −150° −60° −90° 4 16 20 0° 180° −30° −120° IC = 3 mA 0.2 GHz 0 0.04 0.08 0.12 0.16 0.2 −150° 0° −30° −60° −120° −90° 2SC4095 RECOMMENDED SOLDERING CONDTITIONS The following conditions (see table below) must be met then soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different contions. TYPES OF SURFACE MOUNT DEVICE For more details, refer to our document “SMT MANUAL” (IEI-1207). 2SC4095 Soldering process Soldering conditions Symbol Infrared ray reflow Peak package’s surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limit*: None IR30-00-1 VPS Peak package’s surface temperature: 215 C or below, Reflow time: 40 seconds or below (200 C or higher), Number of reflow process: 1, Exposure limit*: None VP15-00-1 Wave soldering Solder temperature: Flow time: Number of reflow process: 260 C or below, 10 seconds or below, 1, Exposure limit*: None Partial heating method Terminal temperature: Flow time: Exposure limit*: 300 C or below, 3 seconds or below, None WS60-00-1 *: Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for “Partial heating method”. 5 2SC4095 [MEMO] 6 2SC4095 [MEMO] 7 2SC4095 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5