NEC 2SC4351L

DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SC4351 is a high-speed Darlington power transistor. This
PACKAGE DRAWING (UNIT: mm)
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• On-chip C to B constant voltage diode for surge voltage
absorption
• On-chip C to E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60 ± 10
V
Collector to emitter voltage
VCEO
60 ± 10
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±5.0
A
IC(pulse)*
±10
A
IB(DC)
0.5
A
Total power dissipation
PT (Tc = 25°C)
20
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Electrode Connection
1. Base
Base current (DC)
2. Collector
3. Emitter
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4351
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
TYP.
MAX.
Unit
0.5
µA
Collector cutoff current
ICBO
VCB = 40 V, IE = 0
DC current gain
hFE1*
VCE = 2.0 V, IC = 2.0 A
2,000
DC current gain
hFE2*
VCE = 2.0 V, IC = 4.0 A
500
Collector saturation voltage
VCE(sat)*
IC = 2.0 A, IB = 2.0 mA
1.5
V
Base saturation voltage
VBE(sat)*
IC = 2.0 A, IB = 2.0 mA
2.0
V
Turn-on time
ton
Storage time
tstg
Fall time
IC = 2.0 A, IB1 = −IB2 = 2.0 mA,
RL = 25 Ω, VCC ≅ 50 V
Refer to the test circuit.
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
2
MIN.
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
Data Sheet D15594EJ2V0DS
20,000
0.7
µs
2.5
µs
0.6
µs
2SC4351
IC Derating dT (%)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Case Temperature TC (°C)
Collector Current IC (A)
Transient Thermal Resistance Rth(j-c) (°C/W)
Case Temperature TC (°C)
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Collector Current IC (A)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
Data Sheet D15594EJ2V0DS
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Data Sheet D15594EJ2V0DS
2SC4351
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Data Sheet D15594EJ2V0DS
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2SC4351
• The information in this document is current as of July, 2001. The information is subject to change
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