DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.3 pF TYP. 0.4 +0.1 –0.05 (1.9) 4 +0.1 –0.05 0.4 Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. 5˚ 5˚ * Please contact with responsible NEC person, if you require evaluation 5˚ 0.16 +0.1 –0.06 3 Kpcs/Reel. 5˚ 0 to 0.1 2SC4957-T2 Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 1 3 Kpcs/Reel. 0.6 +0.1 –0.05 2SC4957-T1 PACKING STYLE 0.8 QUANTITY 1.1 +0.2 –0.1 PART NUMBER 2.9 ±0.2 (1.8) 0.85 0.95 2 ORDERING INFORMATION 3 0.4 +0.1 –0.05 2.8 +0.2 –0.3 1.5 +0.2 –0.1 sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4957) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation PT 180 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C 1. 2. 3. 4. Collector Emitter Base Emitter Caution; Electrostatic Sensitive Device. The information in this document is subject to change without notice. Document No. P10379EJ2V0DS00 (2nd edition) (Previous No. TD-2408) Date Published July 1995 P Printed in Japan © 1993 2SC4957 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 0.1 µA VCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µA VEB = 1 V, I C = 0 DC Current Gain hFE 75 Gain Bandwidth Product fT 12 Feed-back Capacitance Cre 0.3 |S21e| 2 Insertion Power Gain Noise Figure 9 NF VCE = 3 V, IC = 10 mA*1 150 GHz 0.5 11 1.5 2.5 *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. VCE = 3 V, IC = 10 mA pF VCB = 3 V, IE = 0, f = 1 MHz*2 dB VCE = 3 V, IC = 10 mA, f = 2.0 GHz dB VCE = 3 V, IC = 3 mA, f = 2.0 GH hFE Classification Rank T83 Marking T83 hFE 75 to 150 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 200 180 mW 100 0 50 100 TA – Ambient Temperature – ˚C 2 VCE = 3 V Free Air IC – Collector Current – mA PT – Total Power Dissipation – mW 50 150 40 30 20 10 0 0.5 VBE – Base to Emitter Voltage – V 1.0 2SC4957 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 60 200 40 300 µA 30 200 µA 20 IB = 100 µA 14 1 2 3 4 5 100 0 0.1 0.2 6 2 5 10 20 50 100 IC – Collector Current – mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 12 f = 2 GHz 5V 3V 10 8 VCE = 1 V 6 4 f = 2 GHz 5V 10 3V 8 VCE = 1 V 6 4 1 2 5 10 20 1 50 2 5 10 20 IC – Collector Current – mA IC – Collector Current – mA NOISE FIGURE vs. COLLECTOR CURRENT FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 50 0.5 Cre – Feed-back Capacitance – pF 4 f = 2 GHz VCE = 3 V 3 2 1 0 0.5 0.5 1 VCE – Collector to Emitter Voltage – V 12 2 0.5 NF – Noise Figure – dB 5V VCE = 3 V 10 0 fT – Gain Bandwidth Product – GHz 400 µA hFE – DC Current Gain 50 |S21e|2 – Insertion Power Gain – dB IC – Collector Current – mA 500 µA 1 2 5 10 20 IC – Collector Current – mA 50 f = 1 MHz 0.4 0.3 0.2 0.1 0.5 1 2 5 10 20 VCB – Collector to Base Voltage – V 3 2SC4957 S-PARAMETER (VCE = 3 V, IC = 1 mA, ZO = 50 Ω) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 S11 S21 MAG ANG .935 .891 .830 .759 .677 .597 .521 .467 .418 .391 .382 .384 .379 .408 .431 –14.9 –30.0 –44.6 –58.8 –74.2 –88.4 –104.0 –119.3 –134.6 –152.1 –168.4 175.2 163.6 151.4 142.5 MAG S12 ANG 3.466 3.392 3.269 3.090 2.891 2.690 2.519 2.327 2.190 2.052 1.909 1.793 1.684 1.574 1.482 165.9 151.4 137.9 125.8 113.5 102.0 92.4 82.0 73.1 64.9 56.5 49.2 42.4 36.1 31.5 S22 MAG ANG .034 .066 .096 .119 .138 .154 .161 .172 .177 .177 .180 .189 .181 .189 .184 79.7 73.1 61.6 53.2 45.6 40.6 33.9 31.2 27.0 23.4 19.8 22.1 19.6 18.3 18.0 MAG ANG .991 .962 .916 .870 .813 .764 .706 .662 .619 .581 .550 .531 .484 .482 .454 –7.9 –16.1 –22.6 –29.2 –35.1 –41.2 –46.0 –50.4 –55.3 –60.1 –64.5 –68.5 –73.2 –78.0 –84.7 (VCE = 3 V, IC = 3 mA, ZO = 50 Ω) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 4 S11 MAG .813 .693 .563 .453 .362 .290 .250 .217 .206 .221 .238 .264 .285 .317 .344 S21 ANG –24.5 –46.7 –65.0 –81.5 –98.3 –115.6 –133.3 –153.6 –171.5 170.3 153.4 142.1 132.7 124.4 119.8 MAG 8.901 7.806 6.683 5.677 4.878 4.249 3.771 3.363 3.053 2.807 2.571 2.382 2.219 2.080 1.953 S12 ANG 156.5 135.6 119.4 106.9 95.8 86.1 78.6 70.7 63.4 57.1 50.5 45.0 39.6 34.3 29.7 S22 MAG ANG .034 .058 .078 .092 .105 .112 .123 .141 .149 .158 .169 .178 .197 .204 .223 79.6 67.4 59.1 53.5 50.1 47.5 46.3 43.2 42.5 39.6 39.1 36.3 35.2 35.4 32.9 MAG .955 .862 .758 .669 .606 .553 .509 .472 .438 .407 .388 .362 .326 .317 .302 ANG –13.4 –24.7 –31.6 –37.3 –40.8 –45.2 –48.4 –52.4 –55.7 –60.9 –65.7 –70.1 –73.4 –79.0 –87.6 2SC4957 S-PARAMETER (VCE = 3 V, IC = 5 mA, ZO = 50 Ω) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 S11 S21 MAG .716 .553 .412 .315 .243 .190 .167 .161 .162 .193 .220 .252 .267 .311 .330 S12 ANG MAG ANG –31.0 –55.6 –74.5 –91.6 –109.4 –130.1 –152.1 –174.4 167.5 149.8 137.4 128.7 122.3 116.7 112.1 12.446 10.005 8.004 6.521 5.457 4.678 4.099 3.628 3.287 3.008 2.748 2.552 2.366 2.212 2.079 150.0 126.8 110.6 99.2 89.4 80.7 74.1 67.1 60.5 54.9 48.6 43.7 38.6 33.7 29.2 S22 MAG ANG .030 .053 .067 .084 .099 .106 .120 .133 .146 .157 .169 .185 .201 .211 .228 73.7 65.2 60.3 56.2 58.4 53.6 51.9 49.3 48.0 46.3 44.9 39.6 40.2 37.0 35.6 MAG ANG .918 .777 .659 .577 .526 .488 .447 .420 .389 .354 .341 .315 .291 .270 .260 –17.3 –28.8 –34.0 –38.0 –40.5 –44.5 –46.9 –51.2 –55.1 –59.2 –63.9 –69.2 –71.6 –76.9 –88.5 (VCE = 3 V, IC = 10 mA, ZO = 50 Ω) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 S11 MAG .536 .349 .232 .165 .124 .106 .116 .137 .149 .184 .216 .249 .270 .306 .328 S21 ANG –42.2 –68.1 –88.4 –107.1 –130.9 –163.8 173.3 153.2 137.7 129.3 121.9 117.4 111.3 109.1 105.5 MAG 17.753 12.387 9.189 7.205 5.913 5.000 4.352 3.841 3.463 3.168 2.876 2.676 2.486 2.319 2.183 S12 ANG 139.3 115.1 100.7 91.0 82.8 75.3 69.7 63.5 57.5 52.5 46.7 42.1 37.3 32.9 28.4 S22 MAG ANG .024 .041 .057 .071 .090 .103 .122 .138 .145 .170 .184 .191 .208 .221 .238 66.6 67.9 64.3 60.3 62.7 61.1 58.4 54.9 54.6 51.2 48.0 46.4 42.9 39.2 36.7 MAG .840 .654 .547 .489 .451 .413 .394 .367 .338 .319 .298 .282 .241 .236 .210 ANG –22.7 –31.7 –34.1 –35.7 –37.5 –41.4 –43.4 –47.4 –51.0 –55.9 –63.7 –67.7 –71.9 –76.7 –89.3 5 2SC4957 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6