DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Low collector saturation • Reverse deterrence type • Ideal for use in devices such as pulse motor drivers and relay drivers of PC terminals, and ignitors of general-purpose engines. • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO +300, −10 V Emitter to base voltage VEBO 10 V Collector current IC(DC) 5.0 A Collector current IC(pulse)* 10 A IB(DC) 0.5 A Total power dissipation PT (Tc = 25°C) 30 W Total power dissipation PT (Ta = 25°C) 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current (OHFWURGH&RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16137EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD1592 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. Collector cutoff current ICBO VCB = 400 V, IE = 0 DC current gain hFE1* VCE = 2.0 V, IC = 2.0 A 400 DC current gain hFE2* VCE = 2.0 V, IC = 3.0 A 100 TYP. MAX. Unit 10 µA 3,000 Collector saturation voltage VCE(sat)* IC = 2 A, IB = 5 mA 1.0 1.5 V Base saturation voltage VBE(sat)* IC = 2 A, IB = 5 mA 1.6 2.0 V IC = 3.0 A, IB1 = −IB2 = 30 mA RL = 50 Ω, VCC ≅ 150 V 1.0 µs 12 µs 6 µs Turn-on time ton Storage time tstg Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE 400 to 800 600 to 1,200 1,000 to 3,000 Collector Current IC (A) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (Ta = 25°°C) Collector to Emitter Voltage VCE (V) IC Derating dT (%) DC Current Gain hFE Case Temperature TC (°C) Case Temperature TC (°C) 2 Collector Current IC (A) Data Sheet D16137EJ1V0DS &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 &ROOHFWRU&XUUHQW,&$ 2SD1592 &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 Data Sheet D16137EJ1V0DS &ROOHFWRU&XUUHQW,&$ 3 2SD1592 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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