NEC 2SD2161K

DATA SHEET
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output.
This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
ORDERING INFORMATION
Ordering Name
Package
2SD2161
Isolated TO-220
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
(Isolated TO-220)
FEATURES
• High hFE due to Darlington connection
hFE ≥ 2,000 (VCE = 2.0 V, IC = 2.0 A)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
Ratings
Unit
Collector to base voltage
Parameter
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
7.0
±5.0
A
Collector current (pulse)
IC(pulse)
±10
A
Base current (DC)
Symbol
Conditions
PW ≤ 300 µs,
duty cycle ≤ 10%
IB(DC)
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
TC = 25°C
TA = 25°C
V
0.5
A
20
W
2.0
W
150
−55 to +150
°C
°C
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2161
ELECTRICAL CHARACTERISTICS (TA = 25°°C)
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1
hFE2
Conditions
MIN.
VCB = 100 V, IE = 0 A
MAX.
Unit
1.0
µA
VCE = 2.0 V, IC = 2.0 A
Note
2,000
VCE = 2.0 V, IC = 4.0 A
Note
500
Note
1.5
V
2.0
V
Collector saturation voltage
VCE(sat)
IC = 2.0 A, IB = 2.0 mA
Base saturation voltage
VBE(sat)
IC = 2.0 A, IB = 2.0 mANote
Gain bandwidth product
fT
8,000
20,000
VCE = 5.0 V, IC = 0.5 A
30
MHz
Cob
VCB = 10 V, IE = 0 A, f = 1.0 MHz
35
pF
Turn-on time
ton
1.0
µs
Storage time
tstg
IC = 2.0 A, RL = 25 Ω,
IB1 = −IB2 = 2.0 mA, VCC ≅ 50 V
Refer to the test circuit.
3.5
µs
1.2
µs
Collector capacitance
Fall time
tf
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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Data Sheet D14864EJ2V0DS
2SD2161
Derating dT (%)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (TA = 25°°C)
Case Temperature TC (°C)
Case Temperature TC (°C)
Collector Current IC (A)
Single pulse
Transient Thermal Resistance rth(t) (°C/W)
Collector to Emitter Voltage VCE (V)
Without
heatsink
Rth(j – a)
With infinite heatsink
Pulse Width PW (s)
Data Sheet D14864EJ2V0DS
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2SD2161
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2SD2161
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
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