NEC 2SD2164L

DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164 is a single power transistor developed especially
PACKAGE DRAWING (UNIT: mm)
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)
VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°°C)
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Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
3.0
A
Collector current (pulse)
Base current (DC)
IC(pulse)
Note
5.0
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A
IB(DC)
0.5
A
Total power dissipation
PT (TC = 25°C)
20
W
Total power dissipation
PT (TA = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2164
ELECTRICAL CHARACTERISTICS (TA = 25°°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = 60 V, IE = 0 A
Emitter cutoff current
IEBO
VEB = 7.0 V, IC = 0 A
DC current gain
hFE1
DC current gain
hFE2
TYP.
VCE = 5.0 V, IC = 0.5 A
Note
800
1,300
VCE = 5.0 V, IC = 3.0 A
Note
500
1,000
MAX.
Unit
10
µA
10
µA
3,200
VCE(sat)
IC = 2.0 A, IB = 20 mANote
Base saturation voltage
VBE(sat)
IC = 2.0 A, IB = 20 mA
Note
Gain bandwidth product
fT
VCE = 5.0 V, IC = 0.1 A
110
MHz
VCB = 10 V, IE = 0 A, f = 1.0 MHz
50
pF
Collector saturation voltage
Collector capacitance
Cob
1RWH Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE1 CLASSIFICATION
2
MIN.
Marking
M
L
K
hFE1
800 to 1,600
1,000 to 2,000
1,600 to 3,200
Data Sheet D15606EJ3V0DS
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2SD2164
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Data Sheet D15606EJ3V0DS
2SD2164
[MEMO]
Data Sheet D15606EJ3V0DS
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2SD2164
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
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