DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive circuits and 10.0 ±0.3 reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor. 4.5 ±0.2 φ 3.2 ±0.2 2.7 ±0.2 3 ±0.1 mounting cost reduction. 12.0 ±0.2 insulation package, thus contributing to high-density mounting and 15.0 ±0.3 In addition, this transistor features a small resin-molded 4 ±0.2 • High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA) • Mold package that does not require an insulating board or 0.7 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 TYP. insulation bushing 2.54 TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 6.0 A Collector current (pulse) IC(pulse) Base current (DC) Note 2.5 ±0.1 0.65 ±0.1 Electrode Connection 1. Base 2. Collector 3. Emitter 1 2 3 10 13.5 MIN. FEATURES A IB(DC) 1.0 A Total power dissipation (TC = 25°C) PT 30 W Total power dissipation (TA = 25°C) PT 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D13178EJ3V0DS00 (3rd edition) Date Published March 2004 N CP(K) Printed in Japan The mark shows major revised points. c 2002 2SD2165 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 60 V, IE = 0 A Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 A DC current gain Collector saturation voltage VCE = 5.0 V, IC = 1.0 A 800 1,300 hFE2 VCE = 5.0 V, IC = 3.0 A Note 500 1,000 VCE(sat) IC = 3.0 A, IB = 30 mA Note Note 0.3 MAX. Unit 10 µA 10 µA 3,200 1.0 V 1.2 V Base saturation voltage VBE(sat) IC = 3.0 A, IB = 30 mA Gain bandwidth product fT VCE = 5.0 V, IC = 0.1 A 110 MHz VCB = 10 V, IE = 0 A, f = 1.0 MHz 50 pF Collector capacitance Cob Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE1 CLASSIFICATION 2 TYP. Note hFE1 DC current gain MIN. Marking M L K hFE1 800 to 1,600 1,000 to 2,000 1,600 to 3,200 Data Sheet D13178EJ3V0DS 2SD2165 Derating dT (%) Total Power Dissipation PT (W) TYPICAL CHARACTERISTICS (TA = 25°C) Case Temperature TC (°C) Case Temperature TC (°C) Collector Current IC (A) Single pulse Transient Thermal Resistance r(t) (°C/W) Collector to Emitter Voltage VCE (V) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D13178EJ3V0DS 3 2SD2165 DC Current Gain hFE Collector Current IC (A) Pulse test Collector Current IC (A) Gain Bandwidth Product fT (MHz) Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) IC = 200 A • IB B A•I • IB 1000 = C 0A I 0 IB 5 A• IC = 0 0 IB =2 IC A• 0 0 =1 IC Collector Current IC (A) Collector Capacitance Cob (pF) Collector Current IC (A) Collector to Base Voltage VCB (V) 4 Data Sheet D13178EJ3V0DS 2SD2165 • The information in this document is current as of March, 2004. 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