DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 4.5 ±0.1 IC operating at 5 V. 1.6 ±0.2 This product has a low ON resistance and superb switching 1.5 ±0.1 FEATURES • Can be directly driven by 5-V IC D S 0.42 ±0.06 1.5 • Low ON resistance G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.8 MIN. converters. 2.5 ±0.1 characteristics and is ideal for driving the actuators and DC/DC 0.41 +0.03 –0.05 RDS(on) = 0.95 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.50 Ω MAX. @VGS = –10 V, ID = –1.0 A EQUIVALENT CIRCUIT Drain (D) Internal PIN CONNECTIONS diode S: Source D: Drain G: Gate Gate (G) Gate protection diode Marking: PR Source (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 –60 V Gate to Source Voltage VGSS VDS = 0 –20/+10 V Drain Current (DC) ID(DC) ±2.0 A Drain Current (Pulse) ID(pulse) PW ≤ 10 ms Duty cycle ≤ 1 % ±4.0 A Total Power Dissipation PT 16 cm2 × 0.7 mm, ceramic substrate used 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C The internal diode connected between the gate and source of this product is to protect the product from static electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect a protection circuit. Take adequate preventive measures against static electricity when handling this product. The information in this document is subject to change without notice. Document No. D11218EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 2SJ356 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-Off Current IDSS VDS = –60 V, VGS = 0 –10 µA Gate Leakage Current IGSS VGS = –16/+10 V, VDS = 0 ±10 µA Gate Cut-Off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –2.0 V Forward Transfer Admittance |yfs| VDS = –10 V, ID = –1.0 A 1.0 Drain to Source On-State Resistance RDS(on)1 VGS = –4 V, ID = –1.0 A 0.65 0.95 Ω Drain to Source On-State Resistance RDS(on)2 VGS = –10 V, ID = –1.0 A 0.41 0.50 Ω VDS = –10 V, VGS = 0, 270 pF f = 1.0 MHz 145 pF 55 pF Input Capacitance Ciss –1.4 S Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) VDD = –25 V, ID = –1.0 A 4.3 ns tr VGS(on) = –10 V 21 ns 115 ns 75 ns Rise Time RG = 10 Ω, RL = 25 Ω Turn-Off Delay Time td(off) Fall Time tf Gate Input Charge QG VDS = –48 V, 11.6 nC QGS VGS = –10 V, 1.0 nC 3.8 nC Gate to Source Charge ID = –2.0 A, IG = –2 mA Gate to Drain Charge QGD Internal Diode Reverse Recovery Time trr IF = 2.0 A, 82 ns Qrr di/dt = 50 A/µs 94 nC Internal Diode Reverse Recovery Charge TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 –10 1 ID - Drain Current - A dT - Derating Factor -% –5 80 60 40 10 –2 m s m s PW –1 = 10 0 –0.5 DC m s –0.2 20 –0.1 0 2 25 50 75 100 125 TA - Ambient Temperature - ˚C 150 –0.05 –0.5 Single pulse –1 –2 –5 –10 –20 –50 –100 VDS - Drain to Source Voltage - V 2SJ356 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS –10 –5 VDS = –10 V Pulsed Pulsed –1 .5 –4 –3 0 –1 V ID - Drain Current - A ID - Drain Current - A –4 V –4.0 V –3.5 V –2 –3.0 V –1 TA = 150 ˚C –0.1 TA = –25 ˚C –0.01 TA = 0 ˚C TA = 25 ˚C TA = 75 ˚C –0.001 –0.0001 –2.5 V VGS = –2.0 V –0.00001 –1 –2 –3 –4 VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S VDS = –10 V Pulsed 1 TA = –25 ˚C TA = 0 ˚C 0.1 TA = 25 ˚C TA = 75 ˚C 0.01 TA = 150˚C 0.001 –0.0001 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 –0.001 –0.01 –0.1 ID - Drain Current - A –1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 VGS = –10 V Pulsed 0.8 TA = 150 ˚C 0.6 TA = 75 ˚C 0.4 0.2 0 –0.001 TA = 25 ˚C TA = 0 ˚C TA = –25 ˚C –0.01 –0.1 –1 ID - Drain Current - A –1 –5 –10 RDS(on) - Drain to Source On-State Resistance - Ω 0 –2 –3 –4 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.5 VGS = –4 V Pulsed TA = 150 ˚C 1 TA = 75 ˚C 0.5 TA = 25 ˚C TA = 0 ˚C TA = –25 ˚C 0 –0.001 –0.01 –0.1 –1 ID - Drain Current - A –10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 Pulsed 0.8 ID = 2.0 A 0.6 ID = 1.0 A 0.4 0.2 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –20 VGS - Gate to Source Voltage - V 3 2SJ356 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 000 VGS = 0 Pulsed Ciss, Coss, Crss - Capacitance - pF ISD - Diode Forward Current -A –10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE –1 –0.1 –0.01 –0.001 –0.0001 –0.2 1 000 Ciss Crss VGS = 0 f = 1 MHz –0.4 –0.6 –0.8 –1.0 VSD - Source to Drain Voltage - V 10 –1 –1.2 trr - Reverse Recovery Time - ns td(on), tr, td(off), tf - Switching Time - ns 1 000 VDD = –25 V VGS(on) = –10 V td(off) 100 tf tr 10 0 td(on) –1 ID - Drain Current - A –10 VDS - Drain to Source Voltage - V –100 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SWITCHING CHARACTERISTICS 1 000 Coss 100 –10 VGS = 0 di/dt = 50 A/µ s 100 10 –0.05 –0.1 –0.5 –1 –5 IF - Diode Forward Current -A –10 rth(j-a) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 4 1 000 Single pulse Using ceramic substrate of 7.5 cm2 × 0.7 mm 100 10 1 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 2SJ356 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SJ356 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11