NEC 2SJ463

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ463A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Package Drawings (unit: mm)
The 2SJ463A is a switching device which can be driven directly
2.1 ±0.1
0.3 +0.1
–0
by a 2.5 V power source.
The 2SJ463A has excellent switching characteristics, and is
2.0 ±0.2
0.65 0.65
suitable for use as a high-speed switching device in digital circuits.
FEATURES
1.25 ±0.1
2
3
1
• Can be driven by a 2.5 V power source.
Marking
0.9 ±0.1
VDSS
–30
V
Gate to Source Voltage
VGSS
+20
V
Drain Current (DC)
ID(DC)
ID(pulse)
+0.1
+0.4 Note
A
Drain Current (pulse)
0 to 1.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
0.15+0.1
–0.05
0.3
• Low Gate Cut-off Voltage.
A
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
0.3 +0.1
–0
DESCRIPTION
Equivalent Circuit
Drain
Electrode
Connection
1. Source
2. Gate
3. Drain
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
Internal Diode
Gate
Gate Protect
Diode
Source
Marking : H21
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. D11198EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
©
1996
2SJ463A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
2
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Cut-off Current
IDSS
–1
µA
VDS = –30 V, VGS = 0
Gate Leakage Current
IGSS
+10
µA
VGS = +20 V, VDS = 0
Gate Cut-off Voltage
VGS(off)
–1.7
V
VDS = –3 V, ID = –10 µA
Forward Transfer Admittance
| yfs |
mS
VDS = –3 V, ID = –10 mA
Drain to Source On-State
Resistance
RDS(on)1
23
60
Ω
VGS = –2.5 V, ID = –1 mA
Drain to Source On-State
Resistance
RDS(on)2
11
23
Ω
VGS = –4 V, ID = –10 mA
Drain to Source On-State
Resistance
RDS(on)3
6
13
Ω
VGS = –10 V, ID = –10 mA
Input Capacitance
Ciss
5
pF
VDS = –3 V
Output Capacitance
Coss
15
pF
VGS = 0
Reverse Transfer Capacitance
Crss
1.3
pF
f = 1 MHz
Turn-on Delay Time
td(on)
140
ns
VDD = –3 V, ID = –10 mA
Rise Time
tr
330
ns
VGS(on) = –4 V, RG = 10 Ω
Turn-off Delay Time
td(off)
220
ns
RL = 300 Ω
Fall Time
tf
320
ns
–1.0
–1.4
20
2SJ463A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
–100
80
–80
ID - Drain Current - mA
dT - Derating Factor - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
60
40
20
VGS = –10 V
VGS = –6 V
–60
VGS = –4 V
VGS = –3 V
–40
–20
0
0
30
60
90
120
TA - Ambient Temperature - °C
VGS = –2.5 V
0
0
150
–1
–2
–3
–4
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TRANSFER CHARACTERISTICS
1000
VDS = –3 V
IyfsI - Forward Transfer Admittance - mS
–100
ID - Drain Current - mA
–10
TA = 125 °C
TA = 75 °C
–1
TA = 25 °C
TA = –25 °C
–0.1
–0.01
–0.001
0
–0.8
–1.6
–2.4
–3.2
VDS = –3 V
100
TA = –25 °C
TA = 25 °C
10
TA = 75 °C
TA = 125 °C
1
–0.1
–4.0
–1
60
VGS = –2.5 V
50
TA = 125 °C
TA = 75 °C
30
20
TA = 25 °C
0
–0.1
TA = –25 °C
–1
–10
–100
ID - Drain Current - mA
–1000
RDS(on) - Drain to Source On-State Resistance - Ω
RDS(on) - Drain to Source On-State Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
–10
–100
–1000
ID - Drain Current - mA
VGS - Gate to Source Voltage - V
40
–5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
VGS = –4 V
50
40
30
TA = 125 °C
TA = 75 °C
20
10
TA = 25 °C
TA = –25 °C
0
–0.1
–1
–10
–100
ID - Drain Current - mA
–1000
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
VGS = –10 V
50
40
30
20
TA = 75 °C
TA = 25 °C
TA = –25 °C
TA = 125 °C
10
0
–0.1
–1
–10
–100
ID - Drain Current - mA
–1000
RDS(on) - Drain to Source On-State Resistance - Ω
RDS(on) - Drain to Source On-Stage Resistance - Ω
2SJ463A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
50
ID = –1 mA
40
ID = –10 mA
ID = –100 mA
30
20
10
0
0
–2
–4
–6
–8
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
VGS = 0
f = 1 MHz
td(on),tr,td(off),tf - Switching Time - ns
Ciss,Coss,Crss - Capacitance - pF
100
Coss
10
Ciss
Crss
1
–1
–10
VDS - Drain to Source Voltage - V
–100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ID - Reverse Drain Current - mA
–1000
–100
–10
–1
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
VSD - Source to Drain Voltage - V
4
–10
–1.2
tr
tf
td(on)
100
td(off)
VDD = –3 V
VGS(on) = –4 V
Rin = 10 Ω
10
–10
–100
ID - Drain Current - mA
–1000
2SJ463A
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
5
2SJ463A
[MEMO]
6
2SJ463A
[MEMO]
7
2SJ463A
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5