DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION (in millimeter) This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2 10.0±0.3 3.2±0.2 3±0.1 4±0.2 • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V, ID = –10 A) • Low Ciss 12.0±0.2 FEATURES 13.5 MIN. 15.0±0.3 2.7±0.2 Ciss = 2360 pF Typ. • Built-in Gate Protection Diode 0.7±0.1 2.54 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS Gate to Source Voltage* VGSS (AC) Gate to Source Voltage VGSS (DC) Drain Current (DC) ID (DC) Drain Current (pulse)** ID (pulse) 1.3±0.2 1.5±0.2 2.54 –60 – +20 V –20, 0 – +20 V – +80 A 1. Gate 2. Drain 3. Source V A Total Power Dissipation (TC = 25 °C) PT 35 W Total Power Dissipation (TA = 25 °C) PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C 2.5±0.1 0.65±0.1 1 2 3 ISOLATED TO-220 (MP-45F) Drain Body Diode Gate * f = 20 kHz, Duty Cycle d 10% (+Side) ** PW d 10 Ps, Duty Cycle d 1% Gate Protection Diode Source THERMAL RESISTANCE Channel to Case Rth (ch-C) 3.57 °C/W Channel to Ambient Rth (ch-A) 62.5 °C/W The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D11266EJ2V0DS00 (2nd edition) Date Published January 1998 N CP(K) Printed in Japan © 1998 2SJ494 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. MAX. UNIT RDS(on)1 VGS = –10 V, ID = –10 A 39 50 m: RDS(on)2 VGS = –4 V, ID = –10 A 61 88 m: Gate to Source Cutoff Voltage VGS (off) VDS = –10 V, ID = –1 mA –1.0 –1.5 –2.0 V Forward Transfer Admittance | yfs | VDS = –10 V, ID = –10 A 8.0 15 Drain Leakage Current IDSS VDS = –60 V, VGS = 0 –10 PA Gate to Source Leakage Current IGSS VGS = +20 V, VDS = 0 +10 PA Input Capacitance Ciss VDS = –10 V 2360 pF Output Capacitance Coss VGS = 0 1060 pF 350 pF f = 1 MHz S Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) ID = –10 A 25 ns tr VGS(on) = –10 V 160 ns 310 ns 240 ns ID = –20 A 74 nC VDD = –48 V 12 nC 16 nC Rise Time Turn-Off Delay Time td(off) Fall Time tf Total Gate Charge QG Gate to Source Charge QGS VDD = –30 V RG = 10 : VGS = –10 V Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) IF = 20 A, VGS = 0 1.0 Reverse Recovery Time trr IF = 20 A, VGS = 0 130 ns Reverse Recovery Charge Qrr di/dt = 100 A/Ps 290 nC Test Circuit 1 Switching Time RL PG. RG RG = 10 Ω D.U.T. IG = 2 mA VGS VGS 10 % Wave Form VGS (on) PG. 90 % 90 % ID I D Wave Form t t = 1 µs Duty Cycle ≤ 1 % V 0 10 % 10 % td (on) tr ton RL 90 % 0 VDD ID VGS 0 1.5 Test Circuit 2 Gate Charge D.U.T. 2 TYP. td (off) tf toff 50 Ω VDD 2SJ494 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 35 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –1000 Pulsed ID - Drain Current - A 50 0 s ID(pulse) –100 30 0 1 ID(DC) m s 10 Po –10 s µ d ite ) im )L 0V on =1 ( S S RD t VG (a µ ID - Drain Current - A –100 10 we 0 rD m s m s iss ipa tio n Tc = 25 ˚C Single Pulse –1 –0.1 ite VGS= –10 V –60 –40 VGS = –4 V –20 DC Lim –80 d –1 –10 –100 VDS - Drain to Source Voltage - V 0 –4 –8 –12 –16 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A –1 000 Pulsed Tch = –25 ˚C 25 ˚C 125 ˚C –100 –10 –1 0 –5 –10 VDS = –10 V –15 VGS - Gate to Source Voltage - V 3 2SJ494 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5 ˚C/W 100 10 Rth(ch-c) = 3.57 ˚C/W 1 0.1 0.01 Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 100 10 VDS = –10 V Pulsed Tch = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 0.1 –0.1 –10 –1.0 –100 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 150 100 VGS = –4 V VGS = –10 V 50 0 –1 –10 ID - Drain Current - A 4 –100 VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 Pulsed 100 ID = –20 A 50 0 –5 –10 –20 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = –10 V ID = –1 mA –2.0 –1.5 –1.0 –0.5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 160 ISD - Diode Forward Current - A –100 120 80 VGS = –4 V 40 VGS = –10 V VGS = –4 V –10 VGS = 0 –1 –0.1 ID = –10 A 0 –50 0 50 100 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz Ciss 1 000 Coss Crss 100 10 –0.1 –1 –10 –100 td(off) tf 100 tr 10 100 10 –10 IF - Diode Current - A –100 VDS - Drain to Source Voltage - V di/dt = 50 A/µ s VGS = 0 –1 VDD = –30 V VGS = –10 V RG = 10 Ω –10 –100 –1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 –0.1 td(on) 1 –0.1 VDS - Drain to Source Voltage - V 1000 –3.0 –2.0 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 trr - Reverse Recovery Time - ns –1.0 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C DYNAMIC INPUT/OUTPUT CHARACTERISTICS –80 ID = –20 A –14 VGS –60 –12 –40 –10 VDD = –48 V –24 V –12 V –8 –6 –4 –20 –2 VDS 0 20 40 60 80 0 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 2SJ494 QG - Gate Charge - nC 5 2SJ494 Document Name 6 Document No. NEC semiconductor device reliability/quality control system C11745E Power MOS FET features and application to switching power supply D12971E Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037 Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS) C11892E 2SJ494 [MEMO] 7 2SJ494 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5