DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. 0.1 +0.1 –0.05 D 0.8 ± 0.1 1.6 ± 0.1 0.3 ± 0.05 0 to 0.1 S G FEATURES 0.2 +0.1 –0 • Can be driven by a 2.5 V power source. • Low gate cut-off voltage. 0.5 0.6 0.5 0.75 ± 0.05 1.0 1.6 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –30 V Gate to Source Voltage VGSS # 20 V Drain Current (DC) ID(DC) # 0.1 A ID(pulse) # 0.4 A PT 200 mW Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 3.0cm Remark EQUIVALENT CIRCUIT Drain Internal Diode Gate Gate Protect Diode Source × 0.64 mm Marking : C1 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13801EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan © 1999 2SJ559 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = –30 V, VGS = 0 V –1 µA Gate Leakage Current IGSS VGS = # 20 V, VDS = 0 V # 10 µA VGS(off) VDS = –3 V, ID = –10 µA –1.0 –1.7 V | yfs | VDS = –3 V, ID = –10 mA 20 RDS(on)1 VGS = –2.5 V, ID = –1 mA 23 60 Ω RDS(on)2 VGS = –4 V, ID = –10 mA 11 23 Ω RDS(on)3 VGS = –10 V, ID = –10 mA 6 13 Ω Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance –1.4 mS Input Capacitance Ciss VDS = –3 V 5 pF Output Capacitance Coss VGS = 0 V 15 pF Reverse Transfer Capacitance Crss f = 1 MHz 1.3 pF Turn-on Delay Time td(on) VDD = –3 V 140 ns tr ID = –10 mA 330 ns td(off) VGS(on) = –4 V 220 ns RG = 10 Ω, RL = 300 Ω 320 ns Rise Time Turn-off Delay Time Fall Time tf TEST CIRCUIT SWITCHING TIME D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 90 % VDD 90 % ID 90 % ID VGS 0 I D Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 2 VGS(on) 10 % 10 % 0 10 % tr td(on) ton td(off) tf toff Data Sheet D13801EJ1V0DS00 2SJ559 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 –100 80 –80 ID - Drain Current - mA dT - Derating Factor - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 60 40 20 VGS = –10 V VGS = –6 V –60 VGS = –4 V VGS = –3 V –40 –20 0 0 30 60 90 120 TA - Ambient Temperature - C VGS = –2.5 V 0 0 150 –1 –2 –3 –4 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TRANSFER CHARACTERISTICS 1000 VDS = –3 V IyfsI - Forward Transfer Admittance - mS –100 ID - Drain Current - mA –10 TA = 125 ˚C TA = 75 ˚C –1 TA = 25 ˚C TA = –25 ˚C –0.1 –0.01 –0.001 0 –0.8 –1.6 –2.4 –3.2 VDS = –3 V 100 TA = –25 ˚C TA = 25 ˚C 10 TA = 75 ˚C TA = 125 ˚C 1 –0.1 –4.0 –1 60 VGS = –2.5 V 50 TA = 125 ˚C TA = 75 ˚C 30 20 TA = 25 ˚C 0 –0.1 TA = –25 ˚C –1 –10 –100 ID - Drain Current - mA –1000 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 –10 –100 –1000 ID - Drain Current - mA VGS - Gate to Source Voltage - V 40 –5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = –4 V 50 40 30 TA = 125 ˚C TA = 75 ˚C 20 10 TA = 25 ˚C TA = –25 ˚C 0 –0.1 Data Sheet D13801EJ1V0DS00 –1 –10 –100 ID - Drain Current - mA –1000 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = –10 V 50 40 30 20 TA = 75 ˚C TA = 25 ˚C TA = –25 ˚C TA = 125 ˚C 10 0 –0.1 –1 –10 –100 ID - Drain Current - mA –1000 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-Stage Resistance - Ω 2SJ559 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 50 ID = –1 mA 40 ID = –10 mA ID = –100 mA 30 20 10 0 0 –2 –4 –6 –8 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1 MHz td(on),tr,td(off),tf - Switching Time - ns Ciss,Coss,Crss - Capacitance - pF 100 Coss 10 Ciss Crss 1 –1 –10 VDS - Drain to Source Voltage - V –100 tr tf td(on) 100 td(off) ID - Reverse Drain Current - mA –1000 –100 –10 –1 –0.4 –0.6 –0.8 –1.0 –1.2 VSD - Source to Drain Voltage - V 4 VDD = –3 V VGS(on) = –4 V Rin = 10 Ω 10 –10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE –0.1 –0.2 –10 Data Sheet D13801EJ1V0DS00 –100 ID - Drain Current - mA –1000 2SJ559 [MEMO] Data Sheet D13801EJ1V0DS00 5 2SJ559 [MEMO] 6 Data Sheet D13801EJ1V0DS00 2SJ559 [MEMO] Data Sheet D13801EJ1V0DS00 7 2SJ559 • The information in this document is subject to change without notice. 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