PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES PART NUMBER PACKAGE 2SJ600 TO-251 2SJ600-Z TO-252 • Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) • Low Ciss: Ciss = 1900 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V Gate to Source Voltage (VDS = 0 V) VGSS + 20 V Drain Current (DC) (TC = 25°C) ID(DC) + 25 A ID(pulse) + 70 A Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) PT 45 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Tstg –55 to +150 °C Storage Temperature Single Avalanche Current Note2 IAS –25 A Single Avalanche Energy Note2 EAS 62.5 mJ (TO-252) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14645EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan © 2000 2SJ600 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = + 20 V, VDS = 0 V + 10 µA VGS(off) VDS = –10 V, ID = –1 mA 1.5 2.0 2.5 V | yfs | VDS = –10 V, ID = –13 A 10 20 RDS(on)1 VGS = –10 V, ID = –13 A 41 50 mΩ RDS(on)2 VGS = –4.0 V, ID = –13 A 55 79 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V, 1900 pF Output Capacitance Coss VGS = 0 V, 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 140 pF Turn-on Delay Time td(on) ID = –13 A, 9 ns VGS(on) = –10 V, 10 ns VDD = –30 V, 67 ns RG = 0 Ω 19 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG ID = –25 A, 38 nC Gate to Source Charge QGS VDD= –48 V, 7 nC Gate to Drain Charge QGD VGS = –10 V 10 nC VF(S-D) IF = –25 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = –25 A, VGS = 0 V 49 ns Reverse Recovery Charge Qrr di/dt = –100 A / µs 100 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG 50 Ω VDD VGS = –20 V → 0 V RG PG. VGS (−) VGS Wave Form 0 VGS(on) 10% 90% VDD VDS (−) − IAS 90% BVDSS VDS ID VDS Wave Form τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD 90% VDS VGS (−) 0 Preliminary Data Sheet D14645EJ1V0DS 10% 10% 0 td(on) tr ton td(off) tf toff 2SJ600 PACKAGE DRAWINGS (Unit : mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1 +0.2 0.5-0.1 +0.2 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3 +0.2 1.5-0.1 +0.2 1.1±0.2 2 0.5±0.1 1.0 MIN. 1.8 TYP. 4 2.3±0.2 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 1.1±0.2 0.8 4.3 MAX. 3 13.7 MIN. 2 7.0 MAX. 1 5.5±0.2 1.6±0.2 4 5.5±0.2 10.0 MAX. 6.5±0.2 5.0±0.2 0.5±0.1 2.0 MIN. 5.0±0.2 2.3±0.2 1.5-0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Preliminary Data Sheet D14645EJ1V0DS 3 2SJ600 • The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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