NEC 2SJ621

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ621
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The 2SJ621 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
0.4 +0.1
–0.05
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A)
RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
+0.1
0.65–0.15
3
1.5
2.8 ±0.2
FEATURES
0.16+0.1
–0.06
0 to 0.1
1
2
0.95
0.65
0.95
1.9
0.9 to 1.1
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ621
SC-96 (Mini Mold Thin Type)
Marking: XG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–12
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8.0
V
Drain Current (DC) (TA = 25°C)
ID(DC)
m3.5
A
ID(pulse)
m12
0.2
A
Drain Current (pulse)
Note1
Total Power Dissipation (TA = 25°C)
PT1
Note2
Drain
Body
Diode
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Total Power Dissipation (TA = 25°C)
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15634EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2001
2SJ621
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –12 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = m8.0 V, VDS = 0 V
m10
µA
1.5
V
Gate Cut-off Voltage
VGS(off)
Forward Transfer Admittance
Drain to Source On-state Resistance
VDS = –10 V, ID = –1.0 mA
0.45
| yfs |
VDS = –10 V, ID = –3.5 A
4.0
RDS(on)1
VGS = –4.5 V, ID = –2.0 A
35
44
mΩ
RDS(on)2
VGS = –3.0 V, ID = –2.0 A
42
56
mΩ
RDS(on)3
VGS = –2.5 V, ID = –2.0 A
46
62
mΩ
RDS(on)4
VGS = –1.8 V, ID = –1.5 A
63
105
mΩ
S
Input Capacitance
Ciss
VDS = –10 V
630
pF
Output Capacitance
Coss
VGS = 0 V
170
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
100
pF
Turn-on Delay Time
td(on)
VDD = –6.0 V, ID = –2.0 A
20
ns
VGS = –4.0 V
70
ns
RG = 10 Ω
320
ns
200
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = –10 V
6.2
nC
Gate to Source Charge
QGS
VGS = –4.0 V
1.0
nC
Gate to Drain Charge
QGD
ID = –3.5 A
2.0
nC
IF = 3.5 A, VGS = 0 V
0.84
V
Body Diode Forward Voltage
VF(S-D)
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
VGS(−)
D.U.T.
VGS
RL
RG
PG.
Wave Form
0
VGS
10%
VDS(−)
VDD
PG.
90%
90%
VDS
VDS
VGS (−)
0
Wave Form
10%
0
td(on)
τ
tr
ton
10%
td(off)
tf
toff
τ = 1 µs
Duty Cycle ≤ 1%
2
D.U.T.
90%
Data Sheet D15634EJ1V0DS
IG = −2 mA
RL
50 Ω
VDD
2SJ621
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1. 5
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
1. 25
1
0. 75
0. 5
0. 25
0
0
0
20
40
60
80
100
120
140
0
160
TA - Ambient Temperature - °C
20
40
60
80
10 0
12 0
14 0
16 0
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
−100
R D S (o n) L im ite d
(V G S = − 4 .5 V )
−10
PW = 1 m s
I D (D C )
10 m s
−1
1 00 m s
5 s
−0.1
S ing le P u ls e
M o un te d o n F R -4 b o ard o f
5 0 x 50 x 1.6 m m
−0.01
−0.1
−1
−10
−100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
I D (p u ls e)
Single Pulse
Without board
100
Mounted on FR-4 board of
50 × 50 × 1.6 mm
10
1
0.1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15634EJ1V0DS
3
2SJ621
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−12
−100
VDS = −10 V
P u ls e d
P u ls e d
−4.5 V
−10
−2.5 V
ID - Drain Current - A
−10
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
−3.0 V
−8
−6
−1.8 V
−4
−2
0
0
−0.2
−0.4
−0.6
−1
−0.1
T A = − 2 5°C
2 5°C
7 5°C
1 25 °C
−0.01
−0.001
−0.0001
0
−0.8
−0.4
VDS - Drain to Source Voltage - V
50
100
150
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
−0.2
V DS = −10 V
P u ls e d
T A = − 2 5 °C
2 5 °C
7 5 °C
1 2 5 °C
10
1
0 .1
−0.01
−0.1
Tch - Channel Temperature - °C
P uls ed
V G S = − 1.8 V
80
− 2.5 V
60
− 3.0 V
− 4.5 V
20
0
0
50
100
Tch - Channel Temperature - °C
−10
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
4
100
40
−1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
-50
−2
100
−0.7
0
−1.6
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V S D = −10 V
I D = −1 m A
-50
−1.2
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−1.2
−0.8
100
P u ls e d
80
60
I D = − 2 .0 A
40
20
0
0
−2
−4
−6
VGS - Gate to Source Voltage - V
Data Sheet D15634EJ1V0DS
−8
2SJ621
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
V G S = − 1 .8 V
P u ls e d
100
T A = 125°C
80
7 5 °C
2 5 °C
60
− 25°C
40
−0.01
−0.1
−1
−10
−100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
V G S = − 2 .5 V
P u ls e d
70
T A = 1 2 5 °C
60
7 5 °C
50
2 5 °C
40
− 2 5 °C
30
20
−0.01
ID - Drain Current - A
T A = 1 2 5 °C
7 5 °C
2 5 °C
40
− 2 5 °C
30
20
−0.01
−0.1
−1
−10
−100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
V G S = − 3 .0 V
P u ls e d
50
60
50
T A = 1 2 5 °C
7 5 °C
40
2 5 °C
− 2 5 °C
30
20
−0.01
−10
1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V
f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF
−1
1000
C is s
C oss
C rs s
−1
−100
SWITCHING CHARACTERISTICS
10000
−0.1
−0.1
ID - Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
−100
V G S = − 4 .5 V
P u ls e d
ID - Drain Current - A
10
−10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
60
−1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
70
−0.1
−10
V D D = − 6 .0 V
V G S = − 4 .0 V
RG = 10 Ω
t d (o ff)
tf
100
−100
VDS - Drain to Source Voltage - V
Data Sheet D15634EJ1V0DS
tr
t d (o n )
10
−0.1
−1
−10
ID - Drain Current - A
5
2SJ621
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−5
100
VGS - Gate to Source Voltage - V
ISD - Diode Forward Current - A
P u ls e d
10
V GS = 0 V
1
0 .1
0 .0 1
−4
V DD = −10 V
−6.0 V
−3
−2
−1
0
0 .4
0 .6
0 .8
1
1 .2
VSD - Source to Drain Voltage - V
6
I D = −3.5 A
0
1
2
3
4
5
QG - Gate Charge - nC
Data Sheet D15634EJ1V0DS
6
7
2SJ621
[MEMO]
Data Sheet D15634EJ1V0DS
7
2SJ621
• The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4