NEC 2SJ625

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ625
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
FEATURES
0.4 +0.1
–0.05
+0.1
0.65–0.15
3
0 to 0.1
1
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 171 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
RDS(on)3 = 314 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)
2
0.95
PACKAGE
2SJ625
SC-96 (Mini Mold Thin Type)
0.65
0.95
1.9
0.9 to 1.1
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
0.16+0.1
–0.06
1.5
2.8 ±0.2
The 2SJ625 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
Marking: XM
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8.0
V
Drain Current (DC) (TA = 25°C)
ID(DC)
m3.0
A
ID(pulse)
m12
A
PT1
0.2
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15961EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
2SJ625
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = m8.0 V, VDS = 0 V
m10
µA
–1.5
V
Gate Cut-off Voltage
VGS(off)
Forward Transfer Admittance
Drain to Source On-state Resistance
VDS = –10 V, ID = –1.0 mA
–0.45
–0.75
2.0
4.9
| yfs |
VDS = –10 V, ID = –1.5 A
S
RDS(on)1
VGS = –4.5 V, ID = –1.5 A
90
113
mΩ
RDS(on)2
VGS = –2.5 V, ID = –1.5 A
128
171
mΩ
RDS(on)3
VGS = –1.8 V, ID = –1.0 A
188
314
mΩ
Input Capacitance
Ciss
VDS = –10 V
348
pF
Output Capacitance
Coss
VGS = 0 V
88
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
38
pF
Turn-on Delay Time
td(on)
VDD = –10 V, ID = –1.5 A
39
ns
VGS = –4.0 V
190
ns
RG = 10 Ω
220
ns
250
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = –16 V
2.6
nC
Gate to Source Charge
QGS
VGS = –4.0 V
0.8
nC
Gate to Drain Charge
QGD
ID = –3.0 A
0.9
nC
IF = 3.0 A, VGS = 0 V
0.89
V
Body Diode Forward Voltage
VF(S-D)
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS(−)
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
RL
50 Ω
VDD
90%
VDS(−)
VGS(−)
0
IG = −2 mA
td(off)
tf
toff
Data Sheet D15961EJ1V0DS
2SJ625
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
1.25
1
0.75
0.5
0.25
0
Mounted on FR-4 board,
t ≤ 5 sec
0
0
25
50
75
100
125
150
175
0
TA - Ambient Temperature - °C
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
ID(pulse)
PW = 1 ms
ID(DC)
-1
10 ms
-0.1
100 ms
Single Pulse
Mounted on FR-4 board of
2
5000 mm x 1.1 mm
-0.01
-0.1
-1
5s
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
R DS(on) Limited
(V GS = −4.5 V)
Single Pulse
W ithout board
100
Mounted on FR-4 board of
5000 mm 2 x 1.1 mm
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15961EJ1V0DS
3
2SJ625
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-12
-10
V DS = −10 V
Pulsed
Pulsed
−2.5 V
VGS = −4.5 V
-8
ID - Drain Current - A
ID - Drain Current - A
-10
-6
-4
−1.8 V
-1
T A = 125°C
75°C
25°C
−25°C
-0.1
-0.01
-0.001
-2
0
-0.0001
0
-0.4
-0.8
-1.2
-1.6
-2
0
VDS - Drain to Source Voltage - V
-0.8
-0.6
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
VDS = −10 V
ID = −1.0 mA
100
100
VDS = −10 V
Pulsed
T A = −25°C
25°C
75°C
125°C
10
1
0.1
-0.01
-0.4
50
150
Tch - Channel Temperature - °C
VGS = −1.8 V, ID = −1.0 A
250
VGS = −2.5 V, ID = −1.5 A
200
150
100
VGS = −4.5 V, ID = −1.5 A
50
0
50
100
-10
300
Pulsed
250
200
150
ID = −1.5 A
100
50
150
Tch - Channel Temperature - °C
4
-1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
300
-50
-0.1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
-3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-1
0
-2
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-50
-1
0
-2
-4
-6
VGS - Gate to Source Voltage - V
Data Sheet D15961EJ1V0DS
-8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −4.5 V
Pulsed
250
200
TA = 125°C
150
75°C
25°C
100
−25°C
50
-0.01
-0.1
-1
-10
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
2SJ625
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −2.5 V
Pulsed
250
200
TA = 125°C
75°C
150
25°C
−25°C
100
50
-0.01
-0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
300
1000
VGS = −1.8 V
Pulsed
T A = 125°C
75°C
250
25°C
200
−25°C
150
100
50
-0.01
-0.1
-1
tr
tf
td(off)
100
td(on)
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
10
-0.1
-10
-1
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
V GS = 0 V
f = 1.0 MHz
C iss
100
C oss
C rss
Pulsed
IF - Diode Forward Current - A
Ciss, Coss, Crss - Capacitance - pF
-10
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
-0.1
-10
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
-1
10
1
VGS = 0 V
0.1
0.01
-1
-10
-100
VDS - Drain to Source Voltage - V
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet D15961EJ1V0DS
5
2SJ625
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
-6
ID = −3.0 A
VDD = −16 V
−10 V
−4.0 V
-4
-2
0
0
1
2
3
QG - Gate Charge - nC
6
Data Sheet D15961EJ1V0DS
2SJ625
[MEMO]
Data Sheet D15961EJ1V0DS
7
2SJ625
• The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4