DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1580 SWITCHING N-CHANNEL MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance 0.65 2 3 1 0.3+0.1 −0 FEATURES 0.65 2.0±0.2 power saving. 0.3+0.1 −0 including VCR cameras and headphone stereos which need • Directly driven by ICs having a 3 V power supply. • Not necessary to consider driving current because of its high 0.3 Marking 0 to 0.1 resistor. 0.9±0.1 • Possible to reduce the number of parts by omitting the bias 0.15+0.1 −0.05 input impedance. ORDERING INFORMATION PART NUMBER PACKAGE 2SK1580 SC-70 (SSP) 1. Source 2. Gate 3. Drain Marking: G13 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 16 V Gate to Source Voltage (VDS = 0 V) VGSS ±16 V ID(DC) ±100 mA ID(pulse) ±200 mA Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note Total Power Dissipation (TA = 25°C) PT 150 mW Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Body Diode Gate Gate Protection Diode Source Note PW ≤ 10 ms, Duty Cycle ≤ 50% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D13555EJ5V0DS00 (5th edition) Date Published June 2005 NS CP(K) Printed in Japan The mark shows major revised points. 1991 2SK1580 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±3.0 V, VDS = 0 V ±5.0 µA VGS(off) VDS = 3.0 V, ID = 10 µA 0.8 1.1 1.6 V | yfs | VDS = 3.0 V, ID = 10 mA 20 44 RDS(on)1 VGS = 2.5 V, ID = 1.0 mA 9.0 15 Ω RDS(on)2 VGS = 4.0 V, ID = 1.0 mA 6.0 10 Ω Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note mS Input Capacitance Ciss VDS = 3.0 V 18 pF Output Capacitance Coss VGS = 0 V 22 pF Reverse Transfer Capacitance Crss f = 1 MHz 4.0 pF Turn-on Delay Time td(on) VDD = 3.0 V, ID = 10 mA 27 ns tr VGS = 3.0 V 75 ns td(off) RG = 10 Ω 78 ns 80 ns Rise Time Turn-off Delay Time Fall Time tf Note Pulsed TEST CIRCUIT SWITCHING TIME D.U.T. RL RG PG. VGS VGS Wave Form 0 90% VDD 90% ID 90% ID VGS 0 ID 0 10% 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% 2 VGS 10% td(on) tr ton td(off) tf toff Data Sheet D13555EJ5V0DS 2SK1580 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT VS. DRAIN TO SOURCE VOLTAGE 120 150 120 90 60 30 Pulsed 3.5 V 3.0 V 4.0 V 100 ID - Drain Current - mA PT - Total Power Dissipation -m W 180 80 2.5 V 60 40 VGS = 2.0 V 20 0 30 60 90 120 150 TA - Ambient Temperature - ˚C TA = 150˚C 75˚C 25˚C –25˚C 0.1 0.01 0.5 1.0 1.5 2.0 2.5 VGS - Gate to Source Voltage - V 3.0 | yfs | - Forward Transfer Admittance - mS VDS = 3 V Pulsed TA = −25˚C 25˚C 75˚C 150˚C 100 10 1 1 3 10 30 100 300 7 1.5 VDS = 3 V ID = 10 A 1.0 0.5 0 − 30 0 30 60 90 120 150 Tch - Channel Temperature - ˚C FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT 1000 VGS(off) - Gate to Source Cut-off Voltage - V ID - Drain Current - mA 10 0 1 2 3 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE TRANSFER CHARACTERISTICS 100 VDS = 3 V Pulsed 1 0 180 RDS(on) - Drain to Source On-state Resistance - Ω 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 1 mA Pulsed 10 5 0 1000 0 5 10 15 20 25 VGS - Gate to Source Voltage - V ID - Drain Current - mA Data Sheet D13555EJ5V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 2.5 V Pulsed 15 TA = 150˚C 75˚C 25˚C −25˚C 10 5 0 1 3 10 30 ID - Drain Current - mA 100 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω 2SK1580 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 15 ID = 1 mA Pulsed 10 VGS = 2.5 V VGS = 4 V 5 0 –30 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 150 1000 td(on),tr,td(off),tf - Switching Time - ns Ciss,Coss,Crss - Capacitance - pF 30 60 90 120 Tch - Channel Temperature - ˚C SWITCHING CHARACTERISTICS 100 Ciss 10 Coss Crss 1 VGS = 0 V f = 1 MHZ 0.1 0.1 0.3 1 3 10 30 100 VDD = 3 V VGS = 3 V RG = 10 Ω 300 tr 100 tf td(off) 30 10 VDS - Drain to Source Voltage - V 4 0 Data Sheet D13555EJ5V0DS td(on) 2 10 20 ID - Drain Current - mA 100 200 2SK1580 • The information in this document is current as of June, 2005. 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