DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2515 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A) • Low Ciss Ciss = 3 400 pF TYP. • Built-in G-S Protection Diode 2 3 19 MIN. 3.0±0.2 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID (DC) ±50 A Drain Current (pulse)* ID (pulse) ±200 A Total Power Dissipation (Tc = 25 ˚C) PT1 150 W Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg * 4 20.0±0.2 6.0 RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) 4.7 MAX. 1.5 3.2±0.2 7.0 • Super Low On-Resistance 15.7 MAX. 4.5±0.2 1.0 FEATURES 2.2±0.2 5.45 1.0±0.2 5.45 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 Drain –55 to +150 ˚C PW ≤ 10 µs, Duty Cycle ≤ 1 % Body Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D10301EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2515 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-Resistance MIN. TYP. RDS (on)1 MAX. UNIT 9.0 mΩ VGS = 10 V, ID = 25 A 11 14 mΩ VGS = 4 V, ID = 25 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 25 A 10 µA VDS = VDSS, VGS = 0 ±10 µA VGS = ±20 V, VDS = 0 7.3 Drain to Source On-Resistance RDS (on)2 Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 Forward Transfer Admittance | yfs | 20 58 Drain Leakage Current IDSS TEST CONDITIONS Gate to Source Leakage Current IGSS Input Capacitance Ciss 3 400 pF VDS = 10 V Output Capacitance Coss 1 600 pF VGS = 0 Reverse Transfer Capacitance Crss 770 pF f = 1 MHz Turn-On Delay Time td (on) 55 ns ID = 25 A Rise Time tr 360 ns VGS(on) = 10 V Turn-Off Delay Time td (off) 480 ns VDD = 30 V Fall Time tf 360 ns RG = 10 Ω Total Gate Charge QG 152 nC ID = 50 A Gate to Source Charge QGS 11 nC VDD = 48 V Gate to Drain Charge QGD 60 nC VGS = 10 V Body Diode Forward Voltage VF (S-D) 0.92 V IF = 50 A, VGS = 0 Reverse Recovery Time trr 105 ns IF = 50 A, VGS = 0 Reverse Recovery Charge Qrr 265 nC di/dt = 100 A/µs Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 → 0 V Test Circuit 2 Switching Time D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS (on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID ID VGS 0 VDS ID t VDD Starting Tch 0 10 % 10 % Wave Form t = 1 µs Duty Cycle ≤ 1 % td (on) tr ton td (off) tf toff Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2515 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 175 100 80 60 40 20 0 20 40 60 80 150 125 100 75 50 25 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 Pulsed 200 =1 00 ID(DC) 1 Po 10 er Di ss s s m ipa DC tio n Lim VGS = 20 V 160 VGS = 10 V 120 VGS = 4 V 80 40 ite TC = 25 ˚C Single Pulse 1 0.1 m s w 10 ID - Drain Current - A 100 PW µ ID - Drain Current - A ID(pulse) d ite V) im 0 )L =1 n o S S( RD t VG (a d 1 10 100 VDS - Drain to Source Voltage - V 0 1 2 3 4 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed 100 10 TA = –25 ˚C 25 ˚C 125 ˚C 1 0 VDS =10 V 2 4 6 8 VGS - Gate to Source Voltage - V 3 2SK2515 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 100 Rth(ch-a) = 41.7 ˚C/W 10 1 Rth(ch-c) = 0.83 ˚C/W 0.1 0.01 Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 1000 VDS = 10 V Pulsed 100 10 1 1 10 100 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 Pulsed 30 20 VGS = 4 V 10 VGS = 10 V 0 10 100 ID - Drain Current - A 1000 ID = 25 A 10 0 10 20 30 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 20 15 ISD - Diode Forward Current - A VGS = 4 V 10 VGS = 10 V 5 100 10 4V VGS = 0 1 0.1 ID = 25 A 0 –50 0 50 100 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 f = 1 MHz 10 000 Ciss 100 0.1 Coss Crss 1 000 1 10 100 td(off) tf 100 tr td(on) 10 VDD = 30 V VGS = 10 V RG = 10 Ω 1.0 0.1 1.0 VDS - Drain to Source Voltage - V 1000 80 VDS - Drain to Source Voltage - V 10 1.0 10 ID - Drain Current - A 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100A/ µ s VGS = 0 100 1.0 0.1 10 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT trr - Reverse Recovery time - ns Ciss, Coss, Crss - Capacitance - pF 100 000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 100 VDD = 48 V ID = 50 A 16 14 12 60 10 VDS VGS 8 40 6 20 4 2 0 50 100 150 0 200 Qg - Gate Charge - nC 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2515 2SK2515 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 IAS = 50 A EAS =2 10 mJ 1.0 VDD = 30 V VGS = 20 V → 0 RG = 25 Ω 10 µ 100 µ VDD = 30 V RG = 25 Ω VGS = 20 V → 0 IAS <= 50 A 140 120 100 80 60 40 20 1m L - Inductive Load - H 6 50 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C 2SK2515 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 7 2SK2515 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8