DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK2826 TO-220AB FEATURES 2SK2826-S TO-262 • Super Low On-State Resistance 2SK2826-ZJ TO-263 designed for high current switching applications. RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, –10 V ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT 100 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Tstg –55 to + 150 °C IAS 70 A EAS 490 mJ Drain Current (DC) Drain Current (Pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RA = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.25 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11273EJ2V0DS00 (2nd edition) Date Published April 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998 2SK2826 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS • SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 35 A 5.5 6.5 mΩ RDS(on)2 VGS = 4.0 V, ID = 35 A 7.0 9.7 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 35 A 20 94 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 7200 pF Output Capacitance Coss VGS = 0 V 2000 pF Reverse Transfer Capacitance Crss f = 1 MHz 700 pF • Turn-on Delay Time td(on) ID = 35 A 100 ns • Rise Time VGS(on) = 10 V 1200 ns • Turn-off Delay Time td(off) VDD = 30 V 440 ns • Fall Time tf RG = 10 Ω 520 ns Total Gate Charge QG ID = 70 A 150 nC Gate to Source Charge QGS VDD = 48 V 20 nC Gate to Drain Charge QGD VGS = 10 V 40 nC Gate to Source Cut-off Voltage tr Body Diode Forward Voltage S VF(S-D) IF = 70 A, VGS = 0 V 0.97 V Reverse Recovery Time trr IF = 70 A, VGS = 0 V 80 ns Reverse Recovery Charge Qrr di/dt = 100A/µ s 250 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20V → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID ID VGS 0 ID VDS t VDD Starting Tch t = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet D11273EJ2V0DS00 td(on) tr ton td(off) tf toff 2SK2826 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 20 40 60 80 120 100 80 60 40 20 0 100 120 140 160 TC - Case Temperature - ˚C 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 1000 Pulsed ID - Drain Current - A ) on 100 R S( D t (a 10 d ite V) 0 =1 S 0 m Li 1 = µs 100 10 µs ID - Drain Current - A PW ID(pulse) m s VG ID(DC) 10 10 Po 0 we rD iss DC ipa tio n 10 m s m s Lim ite d 80 60 VGS =10 V 40 VGS = 4.0 V 20 TC = 25˚C Single Pulse 1 0.1 1 10 100 0 VDS - Drain to Source Voltage - V 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed 100 10 TA = -25˚C 25˚C 75˚C 125˚C 1 0 2 4 VDS = 10 V 6 8 VGS - Gate to Source Voltage - V Data Sheet D11273EJ2V0DS00 3 2SK2826 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-A) = 83.3 ˚C/W 100 10 1 Rth(ch-C) = 1.25 ˚C/W 0.1 0.01 0.001 10 µ Single Pulse TC = 25˚C 100 µ 1m 10 m 100 m 1 10 100 1 000 100 VDS=10V Pulsed VGS = 0V 10 1.0 TA = 175˚C 75˚C 25˚C -25˚C 0.1 0.1 1.0 10 100 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 10 TA = 25˚C ID = 35 A 0 20 10 VGS = 4.0 V VGS = 10 V 0 10 100 30 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 30 20 10 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1000 VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 - 50 ID - Drain Current - A 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D11273EJ2V0DS00 200 Pulsed 20 15 VGS = 4.0 V 10 VGS = 10 V 5 VGS = 10 V 10 VGS = 0 V 1 0.1 0 50 100 150 0 Tch - Channel Temperature - ˚C 100 000 • td(on), tr, td(off), tf - Switching Time - ns Ciss Coss 1 000 Crss 1 10 SWITCHING CHARACTERISTICS 10 000 VGS = 0 V f = 1 MHz 10 000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V tr 1 000 100 tf td(off) td(on) 100 10 0.1 1 VDS - Drain to Source Voltage - V 10 1.0 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 80 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 100 1 0.1 10 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 VDD = 30 V VGS = 10 V RG = 10 Ω 100 VGS 60 6 VDD = 48 V 30 V 12 V 40 4 20 2 VDS 0 IF - Drain Current - A 50 100 150 VGS - Gate to Source Voltage - V - 50 100 0.1 100 ID = 25 A 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 2SK2826 200 QG - Gate Charge - nC Data Sheet D11273EJ2V0DS00 5 2SK2826 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 100 IAS = 70 A EAS =4 90 Energy Derating Factor - % | IAS | - Single Avalanche Energy - mJ SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD mJ 10 1.0 VDD = 30 V VGS = 20 V → 0 V RG = 25 Ω 10 µ 100 µ VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 70 A 140 120 100 80 60 40 20 1m 10 m L - Inductive Load - H 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C 6 Data Sheet D11273EJ2V0DS00 2SK2826 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. (10) 1.3±0.2 10.0 4.8 MAX. 1.3±0.2 15.5 MAX. 5.9 MIN. 4 4 1 2 3 1.3±0.2 12.7 MIN. 6.0 MAX. 1.3±0.2 0.5±0.2 0.75±0.1 2.54 TYP. 12.7 MIN. 1 2 3 2.8±0.2 8.5±0.2 3.0±0.3 2)TO-262 (MP-25 Fin Cut) 0.5±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZJ) 4.8 MAX. (10) 1.3±0.2 EQUIVALENT CIRCUIT 5.7±0.4 8.5±0.2 1.0±0.5 4 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Drain ) ( R 0.5 ) .8R (0 Body Diode Gate 0.5±0.2 Gate Protection Diode 1.Gate 2.Drain 3.Source 4.Fin (Drain) Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D11273EJ2V0DS00 7 2SK2826 • The information in this document is subject to change without notice. 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