DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 • Low On-State Resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 17 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Gate to Source Voltage VGSS(DC) +20, −10 V ID(DC) ±34 A ID(pulse) ±136 A Total Power Dissipation (TC = 25°C) PT 40 W Total Power Dissipation (TA = 25°C) PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Channel to Case Rth(ch-C) 3.13 °C/W Channel to Ambient Rth(ch-A) 125 °C/W Drain Current (DC) Drain Current (Pulse) Note Note PW ≤ 10 µs, Duty cycle ≤ 1 % THERMAL RESISTANCE The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13798EJ1V0DS00 (1st edition) Date Published May 1999 NS CP(K) Printed in Japan © 1998,1999 2SK3225 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 17 A 13 18 mΩ RDS(on)2 VGS = 4.0 V, ID = 17 A 18 27 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 17 A 13 27 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 2100 pF Output Capacitance Coss VGS = 0 V 550 pF Reverse Transfer Capacitance Crss f = 1 MHz 220 pF Turn-on Delay Time td(on) ID = 17 A 32 ns VGS(on) = 10 V 300 ns td(off) VDD = 30 V 110 ns tf RG = 10 Ω 140 ns Total Gate Charge QG ID = 34 A 45 nC Gate to Source Charge QGS VDD = 48 V 7 nC Gate to Drain Charge QGD VGS(on) = 10 V 13 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage S VF(S-D) IF = 34 A, VGS = 0 V 0.94 V Reverse Recovery Time trr If = 34 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 95 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % IAS ID VGS 0 BVDSS ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet D13798EJ1V0DS00 td(on) tr ton td(off) tf toff 2SK3225 PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 1.1±0.2 +0.2 +0.2 0.5-0.1 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 2.3±0.2 1.0 MIN. 1.8TYP. 0.5±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1±0.2 13.7 MIN. 3 5.5±0.2 2 7.0 MAX. 1.6±0.2 1 4 +0.2 6.5±0.2 5.0±0.2 1.5-0.1 0.5±0.1 4 5.5±0.2 10.0 MAX. 5.0±0.2 2.0 MIN. +0.2 2.3±0.2 1.5-0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13798EJ1V0DS00 3 2SK3225 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8